J.D. Cressler and G.Niu, Silicon-Germanium Heterojunction Bipolar Transistors,
Artech House,
Boston, MA, December 2003, 584 pages.
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This informative resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 600 equations and more than 350 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Contents by Chapter:
Preface, Introduction, SiGe Strained-Layer Epitaxy, SiGe HBT BiCMOS Technology, Static Characteristics, Dynamic Characteristics, Second Order Phenomena, Noise, Linearity, Temperature Effects, Other Device Design Issues, Radiation Tolerance, Device Simulation, Future Directions, Properties of Silicon and Germanium, About the Authors.