Conference Papers: 2006 - 1986

2006 | 2005 | 2004 | 2003 | 2002 | 2001 | 2000 | 1999 | 1998 | 1997 | 1996 | 1995 | 1994 | 1993 | 1992 | 1991 | 1990 - 1986

2006 Papers

J. Andrews and J.D. Cressler, “On the Optimal Use of Multiple Breakdown Voltage Devices in SiGe HBT    Power Amplifiers,” Proceedings IEEE Topical Workshop on Power Amplifiers for Wireless Communications,     paper P8, pp. 1-2, 2006.

A. Bavisi, J.P. Comeau, J.D. Cressler, M. Swaminathan, and M.-C. Lam, “A 9 GHz, 5 mW VCO Using Lumped-Element Transformer Feedback in 150 GHz fT SiGe HBT Technology,” Proceedings of the 2006 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 151-154, 2006.  

J. Comeau, M. Morton, J.D. Cressler, J. Papapolymerou, and M. Mitchell, “A High-Linearity 5-bit, X-Band SiGe HBT Phase Shifter,” Technical Digest of the2006 IEEE MTT-S International Microwave Symposium, pp. 1168-1171, 2006.

Y. Lu,  R. Krithivasan, W.-M.L. Kuo, X. Li, J.W. Andrews, and J.D. Cressler, “A 1.8-3.1 dB Noise Figure (3.0-10.0 GHz) SiGe HBT LNA For UWB Applications,” Proceedings of the2006 IEEE MTT-S RFIC Symposium, pp. 59-62, 2006.

W.-M.L. Kuo, Q. Liang, J.D. Cressler, and M. Mitchell, “An X-band SiGe LNA with 1.36 dB Noise Figure for Monolithic Phased Array Transmit/Receive Radar Modules,” Proceedings of the2006 IEEE MTT-S RFIC Symposium, pp. 549-552, 2006.

L. Najafizadeh, M. Bellini, G. Espinel, and J.D. Cressler, “Cryogenic Operation of SiGe BiCMOS Voltage References,” Proceedings of the Seventh IEEE International Workshop on Low-Temperature Electronics, pp. 77-82, 2006.

M. Bellini, T. Chen, J.D. Cressler, and J. Cai, “Cryogenic Operation of SiGe HBTs on CMOS-compatible Thin-film SOI Substrates,” Proceedings of the Seventh IEEE International Workshop on Low-Temperature Electronics, pp. 87-92, 2006.

G. Prakash, R. Diestelhorst, G. Espinel, A. Sutton, B. Jun, C. Marshall, P. Marshall, and J.D. Cressler, “The Effects of 63 MeV Proton Irradiation on SiGe HBTs Operating at Liquid Nitrogen Temperature,” Proceedings of the Seventh IEEE International Workshop on Low-Temperature Electronics, pp. 93-99, 2006.

J. Comeau, J. Andrews, and J.D. Cressler, “A Monolithic 24 GHz, 20 dBm, 14% PAE SiGe HBT Power Amplifier,” Technical Digest of the2006 IEEE European Microwave Symposium, pp. 419-422, 2006.

X. Li, W.-M.L. Kuo, Y. Lu, and J.D. Cressler, “A 20GS/sec Analog-to-Digital Sigma-Delta Modulator in SiGe HBT Technology,” Technical Digest of the 2006 IEEE Custom Integrated Circuits Conference, pp. 221-224, 2006.

Y. Lu, R. Krithivasan, W.-M.L. Kuo, X. Li, J.D. Cressler, H. Gustat, Y. Borokhovych, B. Tillack, and B. Heinemann, “A 70 MHz – 4.2 GHz 5th-Order Elliptic gm-C Low-Pass Filter in Complementary SiGe Technology,” Proceedings of the 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 80-83, 2006.

R. Krithivasan, Y. Lu, L. Najafizadeh, C. Zhu, J.D. Cressler, S. Chen, C. Ulaganathan, and B. Blalock, “A High-Slew Rate SiGe BiCMOS Operational Amplifier for Operation Down to Deep Cryogenic Temperatures, ”Proceedings of the 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 72-75, 2006.

Y. Cui, G. Niu, Y. Shi, C. Zhu, L. Najafizadeh, J.D. Cressler, and A. Joseph, “SiGe Profile Optimization for Improved Cryogenic Operation at High Injection,” Proceedings of the 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 170-173, 2006.

L. Najafizadeh, C. Zhu, R. Krithivasan, J.D. Cressler, Y. Cui, G. Niu, S. Chen, C. Ulaganathan, B. Blalock, and A.J. Joseph, “SiGe BiCMOS Precision Voltage References for Extreme Temperature Range Electronics,” Proceedings of the 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 88-91, 2006.

C.M. Grens, J.D. Cressler, and A.J. Joseph, “Analysis of Factors Contributing to Common-Base Avalanche Instabilities in Advanced SiGe HBTs,” Proceedings of the 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 29-32, 2006.

M. Bellini, T. Chen, C. Zhu, J.D. Cressler, and J. Cai, “Reliability Issues of SiGe HBTs Fabricated on CMOS-Compatible Thin-Film SOI,” Proceedings of the 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 41-44, 2006.

B. Jun, R.M. Diestelhorst, Q. Ling, G. Freeman, and J.D. Cressler, “Back-Channel, Depletion-Assisted, Gate-Induced Flotating Body Effects in Cryogenically-Operated, 90 nm Strained Si SOI MOSFETs,” Proceedings of the 2006 IEEE SOI Conference, pp. 59-60, 2006.

Z. Feng, G. Niu, C. Zhu, and J.D. Cressler, “Temperature Scalable Modeling of SiGe HBT DC Currents Down to 43K,” Proceedings of the 2006 Electrochemical Society Symposium on SiGe and Ge: Materials, Processing, and Devices, pp. 927-936, 2006.

J. Yuan, C. Zhu, Y. Cui, J.D. Cressler, G. Niu, Q. Liang, E. Zhao, A. Appaswamy,R. Krithivasan, and A. Joseph, “A New Device Phenomenon in Cryogenically-Operated SiGe HBTs,” Technical Digest of the 2006 IEEE International Electron Devices Meeting, pp. 611-614, 2006.

A. Appaswamy, B. Jun, R.M. Diestelhorst, G. Espinel, A.P.G. Prakash, J.D. Cressler, P.W. Marshall, C.J. Marshall, Q. Liang, and G. Freeman, “The Effects of Proton Irradiation on 90 nm Strained Silicon CMOS on SOI Devices,” IEEE Nuclear and Space Radiation Effects Conference Data Workshop Technical Digest, pp. 62-65, 2006.

2005 Papers

J.D. Cressler, "Using SiGe HBT Technology for Extreme Environment Electronics Applications," Proceedings of the 2005 GOMAC-Tech - Government Microcircuit Applications and Critical Technology Conference, pp. 437-441, 2005.

S. Venkataraman, B.M. Haugerud, E. Zhao, B. Banerjee, A. Sutton, J.D. Cressler, J. Laskar, and A.J. Joseph, "Impact of Proton Irradiation on the RF Performance of 0.12 um CMOS Technology," Technical Digest of the 2005 IEEE International Reliability Physics Symposium, pp. 356-359, 2005.

C.M. Grens, J.D. Cressler, J.M. Andrews, Q. Liang, and A.J. Joseph, "Reliability Issues Associated with Operating Voltage Constraints in Advanced SiGe HBTs," Technical Digest of the 2005 IEEE International Reliability Physics Symposium, pp. 409-414, 2005.

Z. Jin, J.A. Johansen, J.D. Cressler, G. Freeman, D. Ahlgren, and A.J. Joseph, "Anomalous Low-Frequency Noise Behavior in 210 GHz SiGe HBTs," Proceedings of the Third SPIE International Symposium on Fluctuations and Noise, Noise in Devices and Circuit III, vol. 5844, pp. 143-149, 2005.

E. Zhao, R. Krithivasan, Z. Jin, A. Sutton, J.D. Cressler, B. El-Kareh, S. Balster, H. Yasuda, P. Marshall, and R. Reed, "Investigating the Fundamental Differences in Low-Frequency Noise Between npn and pnp SiGe HBTs Fabricated in a Complementary SiGe HBT BiCMOS on SOI Technology," Proceedings of the Third SPIE International Symposium on Fluctuations and Noise, Noise in Devices and Circuit III, vol. 5844, pp. 132-142, 2005.

B. Banerjee, S. Venkataraman, E. Zhao, C.-H. Lee, J.D. Cressler, J. Laskar, B. El-Kareh, S. Balster, and H. Yasuda, "Modeling of Broadband Noise in Complementary (npn + pnp) SiGe HBTs, Proceedings of the 2005 IEEE MTT-S RFIC Symposium, pp. 553-556, 2005.

J. Lee and J.D. Cressler, "A 3-10GHz SiGe Resistive Feedback Low Noise Amplifier for UWB Applications," Proceedings of the 2005 IEEE MTT-S RFIC Symposium, pp. 545-548, 2005.

J. Comeau and J.D. Cressler, "Microwave VCO Susceptibility to Substrate Noise in a Fully-Integrated 150 GHz SiGe HBT BiCMOS Technology," Technical Digest of the 2005 IEEE MTT-S International Microwave Symposium, pp. 789-792, 2005 (on CD ROM).

S. Venkataraman, B. Banerjee, C.-H. Lee, J.D. Cressler, J. Laskar, J. Papapolymerou, A.J. Joseph, and S. Sweeney, "The Extraction and Modeling of Intrinsic RF Noise Sources in 120 nm nMOSFETs," Technical Digest of the 2005 IEEE MTT-S International Microwave Symposium, pp. 505-508, 2005 (on CD ROM).

Y. Park, Y. Park, C.-H. Lee, J.D. Cressler, J. Laskar, and A. Joseph, "Very Low Power SiGe LNA for UWB Application," Technical Digest of the 2005 IEEE MTT-S International Microwave Symposium, pp. 504-507, 2005 (on CD ROM).

R. Mukhopadhyay, Y. Park, S.W. Yoon, C.-H. Lee, S. Nuttinck, J.D. Cressler, and J. Laskar, "Active-Inductor-based Low-Power Broadband Harmonic VCO in SiGe Technology for Wideband and Multi-Standard Applications, Technical Digest of the 2005 IEEE MTT-S International Microwave Symposium, pp. 580-583, 2005 (on CD ROM).

J.N. Merrett, J.R. Williams, J.D. Cressler, A. Sutton, L. Cheng, V. Bondarenko, I. Sankin, D. Seale, M. Mazzola, and J.B. Casady, "Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs," Materials Science Forum, vol. 483-485, pp. 885-888, 2005.

C. Zhu, C. Grens, E. Zhao, A. Ahmed, J.D. Cressler, and A.J. Joseph, “Assessing Reliability Issues in Cryogenically-Operated SiGe HBTs” Proceedings of the 2005 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 41-44, 2005.

E. Zhao, M. El-Diwany, J.D. Cressler, J. Shibley,A. Sadovnikov, D. Kocoski, and T.L. Krakowski, “On the Optimization of Lateral pnp BJTs Found in BiCMOS Process Technologies,” Proceedings of the 2005 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 216-219, 2005.

R. Krithivasan, J.P. Comeau, W.-M.L. Kuo, Y. Lu,.J.D. Cressler, and A.J. Joseph, “A 24 GHz Broadband SiGe HBT Limiting Amplifier,” Proceedings of the 2005 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 208-211, 2005.

T. Chen, M. Bellini, E. Zhao, J.P. Comeau, A.K. Sutton,C.M. Grens, J.D. Cressler, J. Cai, T.H. Ning, “Substrate Bias Effects in Vertical SiGe HBTs Fabricated on CMOS-Compatible Thin Film SOI,” Proceedings of the 2005 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 256-259, 2005.

X. Li, W.-M.L. Kuo, Y. Lu, R. Krithivasan, T. Chen, J.D. Cressler, and A.J. Joseph, “A 7-bit, 18 GHz SiGe HBT Comparator for Medium Resolution A/D Conversion,” Proceedings of the 2005 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 144-147, 2005.

Y. Lu, W.-M.L. Kuo, X. Li, R. Krithivasan, J.D. Cressler, Y. Borokhovych, H. Gustat, B. Tillack, and B. Heinemann, “An 8-bit, 12 GSample/sec SiGe Track-and-Hold Amplifier,” Proceedings of the 2005 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 148-151, 2005.

Z. Jin, M. Erturk, J.D. Cressler, and A.J. Joseph, “The Impact of Low-Frequency Noise Variations on the Modeling and Operation of SiGe Circuits,” Proceedings of the 2005 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 192-195, 2005.

J. Andrews, C. Grens, and J.D. Cressler, “The Effects of Layout Variation on the Thermal Characteristics of SiGe HBTs,” Proceedings of the 2005 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 50-53, 2005.

Y. Borokhovych, H. Gustat, B. Tillack, B. Heinemann, Y. Lu, W.-M.L. Kuo, X. Li, R. Krithivasan, and J.D. Cressler, “A Low-Power, 10GS/s Track-and-Hold Amplifier in SiGe BiCMOS Technology,” Proceedings of the 2005 IEEE European Solid-State Circuits Conference, pp. 263-266, 2005.

B.M. Haugerud, S. Venkataraman, A.K. Sutton, A.P.G. Prakash, J.D. Cressler, G. Niu, P.W. Marshall, and A.J. Joseph, “The Impact of Substrate Bias on Proton Damage in 130 nm CMOS Technology,” 2005 IEEE Nuclear and Space Radiation Effects Conference Data Workshop Proceedings, pp. 117-121, 2005.

X. Li, W.-M.L. Kuo, Y. Lu, R. Krithivasan, J.D. Cressler, and A.J. Joseph, “A 5-bit, 18 GS/sec SiGe HBT Track-and-Hold Amplifier,” Proceedings of the 2005 IEEE Compound Semiconductor Integrated Circuits Symposium, pp. 105-108, 2005.

Q. Liang, R. Krithivasan, A. Ahmed, Y. Lu, Y. Li, J.D. Cressler, G. Niu, J.-S. Rieh, G. Freeman, D. Ahlgren, and A. Joseph, “Analysis and Understanding of Unique Cryogenic Phenomena in State-of-the-art SiGe HBTs,” Proceedings of the 2005 IEEE International Semiconductor Device Research Symposium, paper TP1-06, pp. 1-2, 2005.

T. Chen, L. Najafizadeh, C. Zhu, A. Ahmed, R. Diestelhorst, G. Espinel, and J.D. Cressler, “CMOS Device Reliability for Emerging Cryogenic Space Electronics Applications,” Proceedings of the 2005 IEEE International Semiconductor Device Research Symposium, paper TP7-05-01, pp. 1-2, 2005

W.-M.L. Kuo, A. Appaswamy, M. Bellini, R. Krithivasan, J.D. Cressler, and G. Freeman, “Reverse Active Operation of 200 GHz SiGe HBTs,” Proceedings of the 2005 IEEE International Semiconductor Device Research Symposium, paper TP4-03, pp. 1-2, 2005.

W.-M.L. Kuo, X. Li, R. Krithivasan, Y. Lu, J.D. Cressler, Y. Borokhovych, H. Gustat, B. Tillack, and B. Heinemann,“A 32 GSample/sec SiGe HBT Comparator for Ultra-High-Speed Analog-to-Digital Conversion,” Proceedings of the 2005 IEEE MTT Asia-Pacific Microwave Symposium, pp. 291-294, 2005.

W.-M.L. Kuo, Y.-J. E. Chen, J.D. Cressler, and G. Freeman, “Effects of Emitter Scaling and Device Biasing on Millimeter-wave VCO Performance in 200 GHz SiGe HBT Technology,” Technical Digest of the 2005 IEEE MTT Asia-Pacific Microwave Symposium, pp. 852-855, 2005.

2004 Papers

Z. Jin, J.D. Cressler, W. Abadeer, X. Liu, M. Hauser, and A.J. Joseph, “Hot-Carrier Stress Induced Low- Frequency Noise Degradation in 0.13µm and 0.18µm RF CMOS Technologies,” 2004 IEEE International Reliability Physics Symposium, pp. 440-444, 2004.

W.-M. Kuo, J.D. Cressler, Y.J. Chen, and A.J. Joseph, “A 21 GHz Inductor-less Quadrature Ring oscillator Implemented in SiGe HBT Technology,” Proceedings of the 2004 International Silicon-Germanium Technology and Device Meeting, pp. 272-273, 2004.

Y.-J. Chen, W.-M. Kuo, J. Lee, J.D. Cressler, J. Laskar, and G. Freeman, “A Low Power Ka-Band SiGe HBT VCO Using Line Inductors,” Technical Digest of the 2004 IEEE RFIC Symposium, pp. 587-590, 2004.

R. Mukhopadhyay, Y. Park, N. Sritattana, S. Nuttinck, J. Laskar, J.D. Cressler, and A. Joseph, “Reconfigurable RFICs for Frequency-Agile VCO’s in Si-Based Technology for Multi-Standard Applications,” Technical Digest of the 2004 IEEE International Microwave Symposium, pp. 1489-1492, 2004.

R. Krithivasan, Y. Lu, J.D. Cressler, and A. Joseph, “On the Feasibility of Using 120-GHz SiGe HBT Technology for Cryogenic Broadband Analog Applications,” Proceedings of the Sixth IEEE European Workshop on Low-Temperature Electronics, pp. 217-222, 2004.

M.B. Nayeem, B.M Haugerud, R. Krithivasan, C. Zhu, R.E. Belford, J.D. Cressler, and A.J. Joseph, “Mechanical Planar Biaxial Strain Effects in Si/SiGe HBT BiCMOS Technology,” Proceedings of the 2004 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 103-106, 2004.

J.A. Johansen, Y. Birkelund, Z. Jin, and J.D. Cressler, “A Statistical Tool for Probing the Coupling Between Noisy Traps in Semiconductor Devices, with Application to 1/f Noise in SiGe HBTs,” Proceedings of the 2004 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 119-122, 2004.

J.P. Comeau, J.D. Cressler, J. Lee, and A.J. Joseph, “An 8.4-12.0 GHz Down-conversion Mixer Implemented in SiGe HBT Technology,” Proceedings of the 2004 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 13-16, 2004.

J. Lee, Y. Tretiakov, J.D. Cressler, and A. Joseph, “Design of a Monolithic 30 GHz Branch Line Coupler in SiGe HBT Technology Using 3-D EM Simulation,” Proceedings of the 2004 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 274-277, 2004.

M. Morton, J. Andrews, J. Lee, J. Papapolymerou, J.D. Cressler, and D. Cho, “On the Design and Implementation of Transmission Lines in Commercial SiGe HBT BiCMOS Processes,” Proceedings of the 2004 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 53-56, 2004.

Q. Liang, W.-M. Kuo, J.D. Cressler, G. Niu, A.J. Joseph, and D.L. Harame, “Accurate ac Transistor Characterization to 110 GHz Using a New Four-port Self-Calibrated Extraction Technique,” Proceedings of the 2004 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 282-285, 2004.

R. Mukhopadhyay, Y. Park, J. Lee, S. nuttinck, J.D. Cressler, and J. Laskar, “Achieving Frequnecy-Agile Radio,” Proceedings of the 2004 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 85-86, 2004.

T. Chen, W.-M. L. Kuo, E. Zhao, Q. Liang, Z. Jin, J.D. Cressler, and A. Joseph, “On the Suitability of SiGe HBTs for High-Temperature (to 300C) Electronics,” Proceedings of the 2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 217-220, 2004.

Q. Liang, J. Andrews, J.D. Cressler, and G. Niu, “General Analysis of the Impact of Harmonic Impedance on Linearity, with Applications to SiGe HBTs,” Proceedings of the 2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 48-51, 2004.

B. El-Kareh, S. Balster, P. Steinmann, H. Yasuda, W. Nehrer, J.D. Cressler, E. Zhao, F. Hou, C.Dirnecker, M. Garbe, A. Haeusler, P. Menz, T. Scharnagl, M. Schiekofer, H. Schwekendiek, M. Waitschull, J.W. Deijtmans, C. Willis, “Enhanced 5V Complementary SiGe BiCMOS Technology by Separate NPN/PNP Emitter Formation” Proceedings of the 2004 Electrochemical Society Symposium on SiGe: Materials, Processing, and Devices, pp. 53-60, 2004.

J.N. Merrett, J.R. Williams, J.D. Cressler, A. Sutton, L. Cheng, V. Bondarenko, I. Sankin, D. Seale, M. Mazzola, and J.B. Casady, “Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs,” Materials Science Forum, vol. 483-485, pp. 885-888, 2005 (also presented at 2004 European Conference on Silicon-Carbide and Related Materials).

2003 Paper

A. Rennane, L. Bary, G. Niu, J.D. Cressler, A. Joseph, J. Graffeuil, and R. Plana, “Low Frequency Noise Behavior of Advanced SiGe HBTs,” Technical Digest of the 2003 First International SiGe Technology and Device Meeting, pp. 71-72, 2003.

Y. Shi, G. Niu, and J.D. Cressler, “Consistent Simulation of Bandgap Narrowing in SiGe HBTs,” Proceedings of the 2003 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,” pp. 174-176, 2003.

J. Johansen, Z. Jin, J.D. Cressler, and A. Joseph, “Geometry-Dependent Low-frequency Noise Variations in 120 GHz fT SiGe HBTs,” Proceedings of the 2003 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,” pp. 57-59, 2003.

Y. Li, G. Niu, J.D. Cressler, J. Patel, M. Liu, R. Reed, M.M. Mojarradi, and B.J. Blalock, “Operating SOI CMOS Technology in Extreme Environments,” Proceedings of the 2003 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,” pp. 37-40, 2003.

Q. Liang, J.D. Cressler, G. Niu, Y. Lu, G. Freeman, D. Ahlgren, R.M. Malladi, K. Newton, and D.L. Harame, “A Simple 4-Port Parasitic De-embedding Methodology for High Frequency Characterization of SiGe HBTs,” Technical Diegst of the 2003 IEEE IMS RFIC Symposium, pp. 357-360, 2003.

A. Rennane, L. Bary, G. Niu, J.D. Cressler, A. Joseph, J. Graffeuil, and R. Plana, “Scalable Non-Linear Low Frequency Noise Model of SiGe HBT,” Proceedings of the 2003 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 189-191, 2003.

B. Banerjee, S. Venkataraman, Y. Lu, S. Nuttinck, D. Heo, E. Chen, J.D. Cressler, J. Laskar, G. Freeman, and D. Ahlgren, “Cryogenic Performance of a 200 GHz SiGe HBT Technology,” Proceedings of the 2003 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 171-174, 2003.

C. Zhu, Q. Liang, R. Al-Huq, J.D. Cressler, A. Joseph, J. Johansen, T. Chen, G. Niu, G. Freeman, J.-S. Rieh, and D. Ahlgren, “An Investigation of the Damage Mechanisms in Impact Ionization-Induced “Mixed-Mode” Reliability Stressing of Scaled SiGe HBTs,” Technical Digest of the 2003 IEEE International Electron Devices Meeting, pp. 185-188, 2003.

J. Johansen, Z. Jin, J.D. Cressler, Y. Cui, G. Niu, Q. Liang, J.-S.- Rieh, G. Freeman, D. Ahlgren, and A. Joseph, “On the Scaling Limits of Low-Frequency Noise in SiGe HBTs,” Proceedings of the 2003 IEEE International Semiconductor Device Research Symposium, pp. 12-13, 2003.

B. Gaucher, T. Beukema, S. Reynolds, B. Floyd, T. Zwick, U. Pfeiffer, D. Liu, and J.D. Cressler, “Silicon Monolithic Broadband Millimeter Wave Radio Technology,” Proceedings of the 2003International Conference on Space Mission Challenges for Information Technology, pp. 113-121, 2003.

A. Rennane, L. Bary, G. Niu, J.D. Cressler, A. Joseph, J.G. Tartarin, J. Graffeuil, and R. Plana, “Noise Properties of SiGe Devices,” 2003 Third International Conference on SiGe(C) Epitaxy and Heterostructures, Santa Fe, NM, March 2003.

Y. Birkelund, J.A. Johansen, A. Hanssen, J.D. Cressler, and A.D. van Rheenen, “Time Series Analysis of Low-Frequency Noise in SiGe HBTs,” Proceedings of the 2003 Norwegian Symposium on Signal Processing, pp. 1-6, 2003.

M. Varadharajaperumal, G. Niu, R. Krithivasan, J.D. Cressler, R.A. Reed, P.W. Marshall, G. Vizkelethy, P.E. Dodd, and A.J. Joseph, “3D Simulation of Heavy-Ion Induced Charge Collection in SiGe HBTs,” 2003 IEEE Nuclear and Space Radiation Effects Conference, paper F-5, 2003.

R. Krithivasan, G. Niu, J.D. Cressler, S.M. Currie, K.E. Fritz, R.A. Reed, P.W. Marshall, P.A. Riggs, B.A. Randall, and B. Gilbert,” An SEU Hardening Approach for High-Speed SiGe HBT Digital Logic,” 2003 IEEE Nuclear and Space Radiation Effects Conference, paper PE-3, 2003.

Y. Lu, J.D. Cressler, R. Krithivasan, Y. Li, R.A. Reed, P.W. Marshall, C. Polar, G. Freeman, and D. Ahlgren, “Proton Tolerance of Third-Generation, 0.12 µm 185 GHz SiGe HBTs,” 2003 IEEE Nuclear and Space Radiation Effects Conference, paper A-6, 2003.

J.D. Cressler, R. Krithivasan, A.K. Sutton, J.E. Seiler, J.F. Krieg, S.D. Clark, and A.J. Joseph, “The Impact of Gamma Irradiation on SiGe HBTs Operating at Cryogenic Temperatures,” 2003 IEEE Nuclear and Space Radiation Effects Conference, paper A-5, 2003.

Y. Li, J.D. Cressler, Y. Lu, J. Pan, G. Niu, R.A. Reed, P.W. Marshall, C. Polar, M.J. Palmer, and A.J. Joseph, “Proton Tolerance of Multiple-Threshold Voltage and Multi-Breakdown Voltage CMOS Device Design Points in a 0.18µm System-on-a-Chip CMOS Technology,” 2003 IEEE Nuclear and Space Radiation Effects Conference, paper A-10, 2003.

Y. Li, G. Niu, J.D. Cressler, J. Patel, M. Liu, M.M. Mojarradi, R.A. Reed, P.W. Marshall, and B.J. Blalock, “Probing Proton Damage in SOI CMOS Technology by Using Lateral Bipolar Action,” 2003 IEEE Nuclear and Space Radiation Effects Conference, paper B-1, 2003.

R.A. Reed, P.W. Marshall, J. Pickel, M.A. Carts, T. Irwin, G. Niu, J.D. Cressler, R. Krithivasan, K. Fritz, P. Riggs, J. Prairie, B. Randall, B. Gilbert, G. Vizkelethy, P. Dodd, and K. LaBel, “Broad Beam and Ion Microbeam Studies of Single-Event Upsets in High-Speed 0.18µm Silicon Germanium Heterojunction Bipolar Transistors and Circuits,” 2003 IEEE Nuclear and Space Radiation Effects Conference, paper F-4, 2003.

Z. Jin, J.A. Johansen, J.D. Cressler, R.A. Reed, P.W. Marshall, and A.J. Joseph, “Using Proton Irradiation to Probe the Origins of Low-Frequency Noise Variations in SiGe HBTs,” 2003 IEEE Nuclear and Space Radiation Effects Conference, paper A-7, 2003.

Z. Luo, T. Chen, J.D. Cressler, D.C. Sheridan, J.R. Williams, R.A. Reed, and P.W. Marshall, “Impact of Proton Irradiation on the Static and Dynamic Characteristics of High-Voltage 4H-SiC JBS Switching Diodes,” 2003 IEEE Nuclear and Space Radiation Effects Conference, paper A-8, 2003.

A. Chatterjee, J.D. Cressler, D.B.M. Klaasen, A. Matsuzawa, and H. Shichijo, "Foreword,” IEEE Transactions on Electron Devices, Special Issue on Device Integration Technology for Mixed-Signal SoC, pp. 543-545, March 2003.

2002 Papers

G. Zhang, J.D. Cressler, G. Niu, and A. Joseph, “A New “Mixed-Mode” Base Current Degradation Mechanism in Bipolar Transistors,” Proceedings of the 2002 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 32-35, September 2002.

Z. Jin, J.D. Cressler, G. Niu, and A. Joseph, “Low-Frequency Noise Variation in Scaled SiGe HBTs,” Proceedings of the 2002 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 224-227, September 2002.

Q. Liang, J.D. Cressler, G. Niu, R. Malladi, K. Newton, and D.L. Harame, “A High-Injection Transit-time Model For Heterojunction Barrier Effects in SiGe HBTs,” Proceedings of the 2002 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 236-238, September 2002.

Y. Li, G. Niu, J.D. Cressler, J. Patel, P. Marshall, H. Kim, S. Liu, R. Reed, and M. Palmer, “Proton Radiation Effects in 0.35um Partially-Depleted SOI MOSFETs Fabricated on UNIBOND,” 2002 IEEE Nuclear and Space Radiation Effects Conference (NSREC), paper F-1, July 2002.

S. Zhang, J.D. Cressler, S. Subbanna, R. Groves, F. Niu, T. Isaacs-Smith, J. Williams, and H. Bakhru, “Investigation of Proton Energy Effects in SiGe HBT Technology,” 2002 IEEE Nuclear and Space Radiation Effects Conference (NSREC), paper J-8, July 2002.

G. Niu, R. Krithivasan, J.D. Cressler, P. Riggs, B. Randall, P. Marshall, R. Reed, and B. Gilbert, “Comparison of Single Event Effects in High-Speed SiGe HBT D Flip-flop Circuits,” 2002 IEEE Nuclear and Space Radiation Effects Conference (NSREC), paper I-5, July 2002.

J.D. Cressler, R. Krithivasan, G. Zhang, G. Niu, P. Marshall, H. Kim, R. Reed, M. Palmer, and A. Joseph, “An Investigation of the Origins of the Variable Proton Tolerance in Multiple SiGe HBT BiCMOS Technology Generations,” 2002 IEEE Nuclear and Space Radiation Effects Conference (NSREC), paper J-7, July 2002.

Z. Jin, J.D. Cressler, G. Niu, P.W. Marshall, H.S. Kim, R. Reed, and A. Joseph, “Proton Response of Low-Frequency Noise in 0.20 um 90 GHz fT UHV/CVD SiGe HBTs,” Proceedings of the 2002 IEEE Radiation Effects Data Workshop, pp. 127-130, July 2002.

Q. Liang, G. Niu, J.D. Cressler, S. Taylor, and D. Harame, “Geometry and Bias Current Optimization for SiGe HBT Cascode Low-Noise Amplifiers,” Proceedings of the 2002 IEEE MTT RFIC Symposium, pp. 407-410, June 2002.

J. Tang, G. Niu, Z. Jin, J.D. Cressler, S. Zhang, A. Joseph, and D. Harame, “Low-Frequency Noise Figures-of-Merit in RF SiGe HBT Technology,” Proceedings of the 2002 IEEE MTT RFIC Symposium, pp. 179-182, June 2002.

G. Niu, J.D. Cressler, R. Krithivasan, P. Riggs, B. Randall, P. Marshall, R. Reed, and B. Gilbert, “Charge Collection Analysis and SEU Modeling of SiGe HBTs for High-Speed Digital Logic,” Proceedings of the 2002 Single Event Effects Symposium (SEE), paper B7, pp. 1-4, April 2002 (paper is on CD).

2001 Papers

J. Lee, G. Lee, G. Niu, J.D. Cressler, J. Kim, J. Lee, B. Lee, and N. Kim, “Design of a SiGe HBT LNA for IMT-2000 Mobile Applications,” Proceedings of the 6th International CMDA Conference, Seoul, Korea, November 2001.

R. Reed, P. Marshall, H. Ainspan, C. Marshall, H. Kim, J.D. Cressler, and G. Niu, “Single Event Upset Test Results on an IBM Prescalar Fabricated in IBM’s 5HP Germanium Doped Silicon Process,” Proceedings of the 2001 IEEE Radiation Effects Data Workshop, pp. 172-176, July 2001.

Y. Li, J.D. Cressler, G. Niu and J. Patel, “Cryogenic Operation of Fully-Depleted SOI nFETs,” Proceedings of the 10th International Symposium on Silicon-on-Insulator Technology and Devices, S. Cristoloveanu et al., editors: Electrochemical Society, Pennington, NJ, pp. 127-132, 2001.

G. Niu, J.D. Cressler, S. Zhang, A. Joseph, and D. Harame, “RF Noise-Gain Tradeoff in SiGe HBT Profile Design,” Proceedings of the 2001 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 187-191, September 2001.

Z. Jin, G. Niu, J.D. Cressler, C. Marshall, P. Marshall, H. Kim, R. Reed, and D. Harame, “1/f Noise in Proton-Irradiated SiGe HBTs,“ 2001 IEEE Nuclear and Space Radiation Effects Conference (NSREC), paper I-5, July 2001.

G. Niu, R. Krithivasan, J.D. Cressler, P. Marshall, C. Marshall, R. Reed, and D. Harame, “Modeling of Single Event Effects in Circuit-Hardened High-Speed SiGe HBT Logic,” 2001 IEEE Nuclear and Space Radiation Effects Conference (NSREC), paper B-3, July 2001.

Y. Li, G. Niu, J.D. Cressler, J. Patel, C. Marshall, P. Marshall, H. Kim, R. Reed, and M. Palmer, “Anomalous Radiation Effects in Fully-Depleted SOI MOSFETs Fabricated on SIMOX,” 2001 IEEE Nuclear and Space Radiation Effects Conference (NSREC), paper G-3, July 2001.

J.D. Cressler, M. Hamilton, R. Krithivasan, H. Ainspan, R. Groves, G. Niu, S. Zhang, Z. Jin, C. Marshall, P. Marshall, H. Kim, R. Reed, M. Palmer, A. Joseph, and D. Harame, “Proton Response of SiGe HBT Analog and RF Circuits and Passives,“ 2001 IEEE Nuclear and Space Radiation Effects Conference (NSREC), paper I-4, July 2001.

S. Zhang, G. Niu, J.D. Cressler, H. Osten, D. Knoll, C. Marshall, P. Marshall, H. Kim, and R. Reed, “The Effects of Proton Irradiation on SiGe:C HBTs,” IEEE Nuclear and Space Radiation Effects Conference (NSREC), paper I-3, July 2001.

D. Sheridan, G. Chung, S. Clark, and J.D. Cressler, “The Effects of High-Dose Gamma Irradiation on High-Voltage 4H-SiC Schottky Diodes and the SiC/SiO2 Interface,“ 2001 IEEE Nuclear and Space Radiation Effects Conference (NSREC), paper I-2, July 2001.

Y. Li, J.D. Cressler, G. Niu and J. Patel, “Cryogenic Operation of Fully-Depleted SOI nFETs,” Abstracts of the Electrochemical Society Spring Meeting (ECS), p. 500, March 2001.

G. Niu, Q. Liang, J.D. Cressler, C.S. Webster, and D. Harame, “Systematic Analysis of RF Distortion in SiGe HBTs,” Proceedings of the 2001 IEEE MTT RFIC Symposium, pp. 147-150, May 2001.

L. Bary, G. Cibiel, O. llopis, R. Plana, J. Graffeuil, G. Niu, J.D. Cressler, Z. Jin, S. Zhang, and A.J. Joseph, “Low Frequency Noise and Phase Noise Behavior of Advanced SiGe HBTs,” IEEE Microwave Symposium Technical Digest, MTT-S, pp. 1705-1708, May 2001.

2000 Papers

D.C. Sheridan, G. Niu, J.N. Merret, and J.D. Cressler, “Comparison and Optimization of Edge Termination Techniques for SiC Power Devices,” 13th International Symposium on Power Semiconductor Devices, Osaka, Japan, June 2001.

J. Lee, G. Lee, S. Zhang, G. Niu, J.D. Cressler, and N. Kim, “Performance Projections of SiGe HBTs for LNA’s in CDMA Mobile Communications,” Proceedings of the 5th International CMDA Conference, pp. 259-262, Seoul, Korea, November 2000.

D.C. Sheridan, J.N. Merrett, J.D. Cressler, S.E. Saddow, J. Williams, C. Ellis, and G. Niu, “Design and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring Termination,” European Conference on Silicon-Carbide and Related Materials, Kloster-Banz, Germany, September 2000.

J.N. Merrett, D.C. Sheridan, J.R. Williams, C.-C. Tin, and J.D. Cressler, “A Novel Technique for Shallow Angle Beveling of SiC to Prevent Surface Breakdown in Power Devices,” European Conference on Silicon-Carbide and Related Materials, Kloster-Banz, Germany, September 2000.

G. Niu, J.D. Cressler, Z. Jin, S. Zhang, J. Juraver, M. Borgarino, R. Plana, O. Llopis, C. Webster, and A. Joseph, “Transistor Noise in SiGe HBT RF Technology,” Proceedings of the 2000 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 207-210, September 2000.

J.D. Cressler, Y. Li, G.F. Niu, S. Zhang, and G. Freeman, “Low-Temperature Collector Profile Design Issues in Vertically Scaled SiGe HBTs,” Proceedings of the 4th European Workshop on Low-Temperature Electronics (WOLTE4), pp. 61-64, Noordwijk, the Netherlands, June 2000.

G.F. Niu, J.D. Cressler, S.J. Mathew, and D.C. Ahlgren, ”Low Temperature Corner Leakage Characteristics of Shallow Trench Isolated CMOs Devices,” Proceedings of the 4th European Workshop on Low-Temperature Electronics (WOLTE4), pp. 253-257, Noordwijk, the Netherlands, June 2000.

G.F. Niu, J.D. Cressler, S.J. Mathew, and S. Subbanna, “Enhanced Non-Scaling of Linear Resistance in nMOSFETs at Cryogenic Temperatures,” Proceedings of the 4th European Workshop on Low-Temperature Electronics (WOLTE4), pp. 21-24, Noordwijk, the Netherlands, June 2000

J.D. Cressler, M.C. Hamilton, G.S. Mullinax, Y. Li, G.F. Niu, C.J. Marshall, P.W. Marshall, H.S. Kim, M.J. Palmer, A.J. Joseph, and G. Freeman, "The Effects of Proton Irradiation on the Lateral and Vertical Scaling of UHV/CVD SiGe HBT BiCMOS Technology,” 2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC), Reno, NV, July 2000.

S. Zhang, G.F. Niu, J.D. Cressler, S.J. Mathew, S.D. Clark, P. Zampardi, and R.L. Pierson, "A Comparison of The Effects of Gamma Irradiation on SiGe HBT and GaAs HBT Technologies,” 2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC), Reno, NV, July 2000.

G.F. Niu, J.D. Cressler, M. Shoga, K. Jobe, P. Chu, and D.L. Harame, “Simulation of SEE-Induced Charge Collection in UHV/CVD SiGe HBTs,” 2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC), Reno, NV, July 2000.

G.F. Niu, J. Brice, M. Borgarino, Z. Jin, J.D. Cressler, R. Plana, O. Llopis, S. Mathew, S. Zhang, S. Clark, and A.J. Joseph, “The Effects of Gamma Irradiation on the Residual Phase Noise of UHV/CVD SiGe HBTs,” 2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC), Reno, NV, July 2000.

G.F. Niu, J.D. Cressler, C. Webster, A. Joseph*, and D. Harame, “Volterra Series Simulation of
Intermodulation Characteristics of UHV/CVD SiGe HBT’s,” Proceedings of the 2000 IEEE Topical Meeting
on Silicon Monolithic Integrated Circuits in RF Systems, pp. 142-146, Garmisch, Germany, April 2000.

S. Zhang, G.F. Niu, J.D. Cressler, A.J. Joseph, G. Freeman, and D.L. Harame, “The Effects of Geometrical Scaling on the RF Performance of SiGe HBTs,” Proceedings of the 2000 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 48-51, Garmisch, Germany, April 2000.

1999 Papers

G.F. Niu, S. Zhang, J.D. Cressler, A.J. Joseph, J. Fairbanks, L. Larson, C.S. Webster, and D. Harame, “SiGe Profile Design for RF Circuit Applications,” Technical Digest of the 1999 International Electron Devices Meeting (IEDM), pp. 523-527, December 1999.

D.C. Sheridan, J.B. Casady, C.E. Ellis, R.R. Siergiej, J.D. Cressler, R.M. Strong, W.M. Urban, W.F. Valek, C.F. Seiler, and H. Buhay, “Demonstration of Deep (80 um) RIE Etching of SiC for MEMS and MMIC Applications,” International Conference on Silicon Carbide and Related Materials, Paper #58, October 1999.

D.C. Sheridan, G.F. Niu, J.N. Merrett, J.D. Cressler, C. Ellis, C.C. Tin, and R.R. Siergiej, “Simulation and Fabrication of High-Voltage 4H-SiC Diodes With Multiple Floating Guard Ring Termination,” International Conference on Silicon Carbide and Related Materials, Paper #57, October 1999.

G.F. Niu, W.E. Ansley, S. Zhang, J.D. Cressler, C.S. Webster, and R. Groves, “RF and Microwave Noise Optimization of UHV/CVD SiGe HBT’s,” Proceedings of the 1999 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 23-27, September 1999.

G.F. Niu, J.D. Cressler, W.E. Ansley, C.S. Webster, R. Anna, and N. King, “Intermodulation Characteristics of UHV/CVD SiGe HBT’s,” Proceedings of the 1999 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 50-53, September 1999.

G.F. Niu, S.J. Mathew, G. Banerjee, J.D. Cressler, S.D. Clark, M. Palmer, and S. Subbanna, “Total Dose Effects on the Shallow-Trench Isolation Leakage Characteristics in a 0.35um SiGe BiCMOS Technology,” 1999 IEEE Nuclear and Space Radiation Effects Conference (NSREC), Norfolk, VA, July 1999.

G. Banerjee, G.F. Niu, J.D. Cressler, S.D. Clark, M. Palmer, and D. Ahlgren, “Anomalous Dose Rate Effects in Gamma Irradiated SiGe Heterojunction Bipolar Transistors,” 1999 IEEE Nuclear and Space Radiation Effects Conference (NSREC), Norfolk, VA, July 1999.

S.J. Mathew, G.F. Niu, S.D. Clark, J.D. Cressler, M. Palmer, and W. Dubbelday, “Radiation Induced Back-Channel Leakage in SiGe CMOS on Silicon-on-Sapphire Technology,” 1999 IEEE Nuclear and Space Radiation Effects Conference (NSREC), Norfolk, VA, July 1999.

S. Zhang, G.F. Niu, S.D. Clark, J.D. Cressler, M. Palmer, “The Effects of Proton Irradiation on the RF Performance of SiGe HBT’s,” 1999 IEEE Nuclear and Space Radiation Effects Conference (NSREC), Norfolk, VA, July 1999.

J.M. Roldan, J.D. Cressler, G.F. Niu, W.E. Ansley, and S.D. Clark, “Radiation Effects in SiGe HBT BiCMOS technology,” Proceedings of the 1999 Conferencia de Dispositivos, Madrid, Spain, June 1999.

1998 Papers

G.F. Niu, W.E. Ansley, S. Zhang, J.D. Cressler, and R. Grove, “A 2-D Numerical Simulation Methodology for
Noise Figure Optimization in UHV/CVD SiGe HBT’s,” Proceedings of the 1998 IEEE Topical Meeting on
Silicon Monolithic Integrated Circuits in RF Systems, pp. 33-37, September 1998.

D.C. Sheridan, J.B. Casady, C.E. Ellis, R.R. Siergiej, J.D. Cressler, R.M. Strong, W.M. Urban, W.F. Valek,
C.F. Seiler, and H. Buhay, “Critical Mask Development for Deep (10um-100um) Etching of SiC,” Meeting of
the American Vacuum Society, Baltimore, MD, November 1998.

U. Gogineni, G.F. Niu, J.D. Cressler, and S.J. Mathew, “Comparison of Current Gain and Low
Frequency Noise Degradation by Hot Electrons and Hot Holes Under Reverse EB Stress in
UHV/CVD SiGe HBTs, Proceedings of the 1998Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 172-175, September 1998.

J. Roldán, G.F. Niu, W.E. Ansley, J.D. Cressler, and S.D. Clark, “An Investigation of the Spatial Location of Proton Induced Traps in SiGe HBTs,” 1998 IEEE Nuclear and Space Radiation Effects Conference (NSREC), Newport Beach, CA, July 1998.

G.F. Niu, G. Banerjee, J.D. Cressler, J. Roldán, and S.D. Clark, “Electrical Probing of Surface and Bulk Traps in Proton-Irradiated Gate-Assisted Lateral pnp Transistors,” 1998 IEEE Nuclear and Space Radiation Effects Conference (NSREC), Newport Beach, CA, July 1998.

G.F. Niu, U. Gogineni, and J.D. Cressler, “Electron Impact-Ionization Effects in UHV/CVD SiGe HBTs in the Temperature Range of 300 to 83K,” 3rd European Workshop on Low-Temperature Electronics (WOLTE3), San Miniato, Italy, June 1998.

U. Gogineni, G.F. Niu, and J.D. Cressler, “Extraction of Collector-Base Resistance of UHV/CVD SiGe HBTs Operating at Low Temperatures,” 3rd European Workshop on Low-Temperature Electronics (WOLTE3), San Miniato, Italy, June 1998.

J.M. Roldán, J.D. Cressler, G.F. Niu, S.D. Clark, and D. Nguyen-Ngoc, “Gamma Radiation Tolerance of UHV/CVD SiGe BiCMOS Technology Operated at Cryogenic Temperatures,” 3rd European Workshop on Low-Temperature Electronics (WOLTE3), San Miniato, Italy, June 1998.

1998 Papers

S.J. Mathew, G.F. Niu, W.B. Dubbelday, J.D. Cressler, J. Ott, J.O. Chu, P.M. Mooney, K.L. Kavanaugh, B.S. Meyerson, and I. Lagnado, “Hole Confinement and Its Impact on Low-Frequency Noise in SiGe pFETs,” Technical Digest of the 1997 IEEE International Electron Devices Meeting (IEDM), pp. 815-818, December 1997.

S. Salmon, J.D. Cressler, R.C. Jaeger, and D.L. Harame, “The Impact of Ge Profile Shape on the Operation of SiGe HBT Precision Voltage References,” Proceedings of the 1997 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 100-103, October 1997.

J.D. Cressler, A.J. Joseph, S.L. Salmon, and D.L. Harame, “Device Design and Circuit Modeling Issues in Ultrahigh Vacuum / Chemical Vapor Deposition SiGe Heterojunction Bipolar Transistors,” 1997 Engineering Foundation Workshop on Si-based Heterostructures: From Physics to Devices, Barga, Italy, September 1997.

J. Roldán, W.E. Ansley, J.D. Cressler, S.D. Clark, D. Nguyen-Ngoc, “Neutron Radiation Tolerance of Advanced UHV/CVD SiGe HBT BiCMOS Technology,” 1997 IEEE Nuclear and Space Radiation Effects Conference (NSREC), Snowmass, CO, July 1997.

S.J. Mathew, W.E. Ansley, W.B. Dubbelday, J.D. Cressler, J. Ott, J.O. Chu, B.S. Meyerson, K.L. Kavanaugh, P.M. Mooney, and I. Lagnado, “Effect of Ge Profile on the Frequency Response of a SiGe pFET on Sapphire Technology,” Technical Digest of the 1997 IEEE Device Research Conference (DRC), pp. 130-131, June 1997.

S. Jayanarayanan and J.D. Cressler, “Potential for Silicon-Germanium-Carbon HBT Operation at Cryogenic Temperatures,” Extended Abstracts of the 1997 Electrochemical Society Spring Meeting (ECS), abstract #558, pp. 711-712, May 1997.

S. Jayanarayanan and J.D. Cressler, “Potential for Silicon-Germanium-Carbon HBT Operation at Cryogenic Temperatures,” Proceedings of the 1997 ECS Symposium on Low-Temperature Electronics and High-Temperature Superconductivity, C. Claeys and S.I. Raider, editors: Electrochemical Society, Pennington, NJ, pp. 240-245, 1997.

A.J. Joseph and J.D. Cressler, “Ge Profile Optimization Issues for Cryogenically Operated SiGe HBTs,” Extended Abstracts of the 1997 Electrochemical Society Spring Meeting (ECS), abstract #557, pp. 709-710, May 1997.

A.J. Joseph and J.D. Cressler, “Ge Profile Optimization Issues for Cryogenically Operated SiGe HBTs,” Proceedings of the 1997 ECS Symposium on Low-Temperature Electronics and High-Temperature Superconductivity, C. Claeys and S.I. Raider, editors: Electrochemical Society, Pennington, NJ, pp. 232-239, 1997.

J.M. Roldán, J.D. Cressler, D. Nguyen-Ngoc, and S.D. Clark, “The Effects of Neutron Irradiation on the Cryogenic Properties of UHV/CVD SiGe HBTs,” Extended Abstracts of the 1997 Electrochemical Society Spring Meeting (ECS), abstract #559, pp. 713-714, May 1997.

J.M. Roldán, J.D. Cressler, D. Nguyen-Ngoc, and S.D. Clark, “The Effects of Neutron Irradiation on the Cryogenic Properties of UHV/CVD SiGe HBTs,” Proceedings of the 1997 ECS Symposium on Low-Temperature Electronics and High-Temperature Superconductivity, C. Claeys and S.I. Raider, editors: Electrochemical Society, Pennington, NJ, pp. 246-253, 1997.

S.J. Mathew, W.B. Dubbelday, J.D. Cressler, J. Ott, J.O. Chu, B.S. Meyerson, K.L. Kavanaugh, and I. Lagnado, “Operation of Silicon-Germanium CMOS on Sapphire Technology at Cryogenic Temperatures,” Extended Abstracts of the 1997 Electrochemical Society Spring Meeting, abstract #561, pp. 717-718, May 1997.

S.J. Mathew, W.B. Dubbelday, J.D. Cressler, J. Ott, J.O. Chu, B.S. Meyerson, K.L. Kavanaugh, and I. Lagnado, “Operation of Silicon-Germanium CMOS on Sapphire Technology at Cryogenic Temperatures,” Proceedings of the 1997 ECS Symposium on Low-Temperature Electronics and High-Temperature Superconductivity, C. Claeys and S.I. Raider, editors: Electrochemical Society, Pennington, NJ, pp. 270-278, 1997.

1996 Papers

D.M. Richey and J.D. Cressler, "Scaling Issues and Ge Profile Optimization in Advanced UHV/CVD SiGe HBTs," Proceedings of the 1996 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 19-22, October 1996.

A.J. Joseph, J.D. Cressler, D.M. Richey, and D.L. Harame, "Impact of Profile Scaling on High-Injection Barrier Effects in Advanced UHV/CVD SiGe HBT's," Technical Digest of the 1996 IEEE International Electron Devices Meeting (IEDM), pp. 253-256, December 1996.

A.J. Joseph, J.D. Cressler, and D.M. Richey, "Optimization of Early Voltage for Cooled SiGe HBT Precision Current Sources,” 2nd European Workshop on Low-Temperature Electronics (WOLTE2), Leuven, Belgium, June 1996.

M.S. Latham, J.D. Cressler, A.J. Joseph, and R.C. Jaeger, "The Impact of Ge Grading on the Bias and Temperature Characteristics of SiGe HBT Precision Voltage References," 2nd European Workshop on Low-Temperature Electronics (WOLTE2), Leuven, Belgium, June 1996.

J.A. Babcock, A.J. Joseph, J.D. Cressler, L.S. Vempati, and D.L. Harame, "The Effects of Reverse-bias Stress on the Cryogenic Operation of Advanced UHV/CVD Si- and SiGe-base Bipolar Transistors," Technical Digest of the 1996 IEEE International Reliability Physics Symposium (IRPS), pp. 294-299, May 1996.

1995 Papers

A.J. Joseph, J.D. Cressler, R.C. Jaeger, D.M. Richey, and D.L. Harame, "Neutral Base Recombination in Advanced SiGe HBTs and Its Impact on the Temperature Characteristics of Precision Analog Circuits," Technical Digest of the 1995 IEEE International Electron Devices Meeting (IEDM), pp. 755-758, December 1995.

J.A. Babcock, J.D. Cressler, L.S. Vempati, A.J. Joseph, and D.L. Harame, "Correlation of Low-Frequency Noise and Emitter-base Reverse-Bias Stress in Epitaxial Si- and SiGe-base Bipolar Transistors," Technical Digest of the 1995 IEEE International Electron Devices Meeting (IEDM), pp. 357-360, December 1995.

L.S. Vempati, J.D. Cressler, R.C. Jaeger, and D.L. Harame, "Low-frequency Noise in UHV/CVD
Si- and SiGe-base Bipolar Transistors," Proceedings of the 1995 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 129-132, October 1995.

D.M. Richey, A.J. Joseph, J.D. Cressler, and R.C. Jaeger, "Evidence of Non-Equilibrium Base Transport in Si and SiGe Bipolar Transistors at Cryogenic Temperatures," Proceedings of the 1995 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 35-38, October 1995.

J.A. Babcock, J.D. Cressler, L.S. Vempati, S.D. Clark, R.C. Jaeger, and D.L. Harame, "Ionizing Radiation Tolerance of High-Performance SiGe HBTs Grown by UHV/CVD," 1995 IEEE Nuclear and Space Radiation Effects Conference (NSREC), Paper A-3, Madison, WI, July 1995.

A.J. Joseph, J.D. Cressler, and D.M. Richey, "Novel Collector Current Phenomenon in Advanced Bipolar Transistors Operated at Deep Cryogenic Temperatures," Technical Digest of the 1995 IEEE Device Research Conference (DRC), pp. 162-163, June 1995.

J.A. Babcock, J.D. Cressler, S.D. Clark, L.S. Vempati, and D.L. Harame, "The Effects of Ionizing Radiation on SiGe HBTs Operated at 77K," Extended Abstracts of the 1995 Electrochemical Society Spring Meeting, Abstract #521, pp. 800-801, May 1995.

J.A. Babcock, J.D. Cressler, S.D. Clark, L.S. Vempati*, and D.L. Harame, "The Effects of Ionizing Radiation on SiGe HBTs Operated at 77K," Proceedings of the 1995 ECS Symposium on Low-Temperature Electronics and High-Temperature Superconductivity, C. Claeys and S.I. Raider, editors: Electrochemical Society, Pennington, NJ, pp. 221-232, 1995.

A.J. Joseph, J.D. Cressler, D.M. Richey, and D.L. Harame, "Temperature Dependence of Early Voltage and Current Gain-Early Voltage Product in SiGe HBTs," Extended Abstracts of the 1995 Electrochemical Society Spring Meeting, Abstract #520, pp. 798-799, May 1995.

A.J. Joseph, J.D. Cressler, D.M. Richey, and D.L. Harame, "Temperature Dependence of Early Voltage and Current Gain-Early Voltage Product in SiGe HBTs," Proceedings of the 1995 ECS Symposium on Low-Temperature Electronics and High-Temperature Superconductivity, C. Claeys and S.I. Raider, editors: Electrochemical Society, Pennington, NJ, pp. 211-220, 1995.

G.D. Bradford, J.D. Cressler, and D.L. Harame, "Operation of SiGe BiCMOS Technology at Cryogenic Temperatures," Extended Abstracts of the 1995 Electrochemical Society Spring Meeting, Abstract #518, pp. 794-795, May 1995.

G.D. Bradford, J.D. Cressler, and D.L. Harame, "Operation of SiGe BiCMOS Technology at Cryogenic Temperatures," Proceedings of the 1995 ECS Symposium on Low-Temperature Electronics and High-Temperature Superconductivity, C. Claeys and S.I. Raider, editors: Electrochemical Society, Pennington, NJ, pp. 189-198, 1995.

D.M. Richey, J.D. Cressler, A.J. Joseph, and R.C. Jaeger, "Low-Temperature Modeling of SiGe HBTs Using SCORPIO," Extended Abstracts of the 1995 Electrochemical Society Spring Meeting, Abstract #517, pp. 792-793, May 1995.

D.M. Richey, J.D. Cressler, A.J. Joseph, and R.C. Jaeger, "Low-Temperature Modeling of SiGe HBTs Using SCORPIO," Proceedings of the 1995 ECS Symposium on Low-Temperature Electronics and High-Temperature Superconductivity, C. Claeys and S.I. Raider, editors: Electrochemical Society, Pennington, NJ, pp. 178-188, 1995.

1994 Papers

D.L. Harame, K. Schonenberg, M. Gilbert, D. Nguyen-Ngoc, J. Malinowski, S.-J. Jeng, B. Meyerson, J.D. Cressler, R. Groves, G. Berg, K. Tallman, K. Stein, G. Hueckel, C. Kermarrec, T. Tice, G. Fitzgibbons, K. Walter, D. Colavito, T. Houghton, N. Greco, T. Kebede, B. Cunningham, S. Subbanna, J.H. Comfort, and E.F. Crabbé, "A 200 mm SiGe-HBT Technology for Wireless and Mixed-Signal Applications," Technical Digest of the 1994 International Electron Device Meeting (IEDM), pp. 437-440, December 1994.

D.M. Richey, J.D. Cressler, and R.C. Jaeger, "Numerical Simulation of SiGe HBTs at Cryogenic Temperatures,” 1st European Workshop on Low-Temperature Electronics (WOLTE1), Grenoble, France, June 1994.

J.D. Cressler, D.M. Richey, R.C. Jaeger, E.F. Crabbé, J.H. Comfort, and J.M.C. Stork, "High-Injection Barrier Effects in SiGe HBTs Operating at Cryogenic Temperatures," 1st European Workshop on Low-Temperature Electronics (WOLTE1), Grenoble, France, June 1994.

J.D. Cressler, A.J. Joseph, D.M. Richey, J.H. Comfort, D.L. Harame, E.F. Crabbé, and J.M.C. Stork, "Liquid-Helium Temperature Operation of Silicon-Germanium Heterojunction Bipolar Transistors," Proceedings of the International Society for Optical Engineering (SPIE) Symposium on Optical Engineering in Aerospace Sensing, Orlando, FL, April 1994.

1993 Papers

D.L. Harame, J.M.C. Stork, B.S. Meyerson, K.Y.-J. Hsu, J. Cotte, K.A. Jenkins, J.D. Cressler, P. Restle, E.F. Crabbé, S. Subbanna, T.E. Tice, B.W. Scharf, and J.A. Yasaitis, "Optimization of SiGe HBT Technology for High-Speed Analog and Mixed-Signal Applications," Technical Digest of the 1993 International Electron Device Meeting (IEDM), pp. 71-74, December 1993.

J. Warnock, J.D. Cressler, J. Burghartz, D. Harame, K. Jenkins, and C.T. Chuang, "High Performance Complementary Bipolar Technology," Technical Digest of the 1993 Symposium on VLSI Technology (VLSI), pp. 75-76, May 1993.

P.J. Coane, K.C. Chiong, M.B. Rothwell, J. Warnock, J.D. Cressler, F.J. Hohn, and M.G. Thomson, "Fully Scaled 0.25um Bipolar Technology Using Variable Shaped E-beam Lithography," Proceedings of the International Society for Optical Engineering (SPIE), 1993 Symposium on Microlithography, SPIE vol. 1924, 1993.

D.L. Harame, J.H. Comfort, E.F. Crabbé, J.D. Cressler, J.D. Warnock, B.S. Meyerson, K.Y.-J. Hsu, J. Cotte, C.L. Stanis, J.M.C. Stork, J.Y.-C. Sun, D.A. Danner, and P.D. Agnello, "A SiGe-Base PNP ECL Circuit Technology," Technical Digest of the 1993 Symposium on VLSI Technology (VLSI), pp. 61-62, May 1993.

J.N. Burghartz, A.O. Cifuentes, J. Warnock, R.C. McIntosh, C.L. Stanis, J.D. Cressler, J.Y.-C. Sun, J.H. Comfort, and K.A. Jenkins, "SPIRIT - A BiCMOS/Bipolar Isolation Technology for High-Performance VLSI," Technical Digest of the 1993 Symposium on VLSI Technology (VLSI), pp. 143-144, May 1993.

G.G. Shahidi, J. Warnock, A. Acovic, P. Agnello, C. Blair, T. Bucelot, J. Burghartz, E. Crabbé, J.D. Cressler, P. Coane, J. Comfort, B. Davari, S. Fischer, E. Ganin, D. Gittleman, K. Jenkins, D. Klaus, K. Kiewtniak, T. Lii, P.A. McFarland, T. Ning, M. Polcari, S. Subbana, J.Y.-C. Sun, D. Sunderland, A.C. Warren, and C. Wong, "A High-Performance, 0.15um CMOS Technology," Technical Digest of the 1993 Symposium on VLSI Technology (VLSI), pp. 93-94, May 1993.

1992 Papers

D.L. Harame, E.F. Crabbé, J.D. Cressler, J.H. Comfort, J.Y.-C. Sun, S.R. Stiffler, E. Kobeda, M. Gilbert, J. Malinowski, A.J. Dally, S. Ratanaphanyarat, M.J. Saccamango, W. Rausch, J. Cotte, C. Chu, and J.M.C Stork, "A High-Performance Epitaxial SiGe-base ECL BiCMOS Technology," Technical Digest of the 1992 International Electron Device Meeting (IEDM), pp. 19-22, December 1992.

J.N. Burghartz, J. Warnock, J.D. Cressler, C.L. Stanis, R.C. McIntosh, J.Y.-C. Sun, J.H. Comfort, J.M.C. Stork, K.A. Jenkins, E.F. Crabbé, W. Lee, and M. Gilbert, "Novel Bipolar Transistor Isolation Structure Using Combined Selective Epitaxial Growth and Planarization Technique," Proceedings of the 22nd European Solid State Device Research Conference (ESSDERC), September 1992.

J.D. Cressler, J.H. Comfort, E.F. Crabbé, J.Y.-C. Sun, and J.M.C. Stork, "An Epitaxial Emitter Cap, SiGe-base Bipolar Technology with 22 ps ECL Gate Delay at Liquid Nitrogen Temperature," Technical Digest of the 1992 Symposium on VLSI Technology (VLSI), pp. 102-103, May 1992.

1991 Papers

J.D. Cressler, E.F. Crabbé, J.H. Comfort, J. Warnock, K.A. Jenkins, J.M.C. Stork, and J.Y.-C. Sun, "Profile Scaling Constraints for Ion-Implanted and Epitaxial Bipolar Technology Designed for 77K Operation," Technical Digest of the 1991 International Electron Device Meeting (IEDM), pp. 861-864, December 1991.

J. Warnock, J.D. Cressler, P.J. Coane, K.N. Chiong, M.E. Rothwell, K.A. Jenkins, J.N. Burghartz, E. Petrillo, N. Mazzeo, A. Megdanis, F.J. Hohn, M.G.R. Thomson, J.Y.-C. Sun, and D.D. Tang, "A Full E-beam 0.25um Bipolar Technology with Sub-25 ps ECL Gate Delay," Technical Digest of the 1991 International Electron Device Meeting (IEDM), pp. 956-958, December 1991.

J.H. Comfort, E.F. Crabbé, J.D. Cressler, W. Lee, J.Y.-C. Sun, J. Malinowski, M. D'Agostino, J.N. Burghartz, J.M.C. Stork, and B.S. Meyerson, "Single Crystal Emitter Cap for Epitaxial Si and SiGe Base Transistors,"Technical Digest of the 1991 International electron Device Meeting (IEDM), pp. 857-860, December 1991.

K.A. Jenkins, J.D. Cressler, and J. Warnock, "Use of Electron-Beam Irradiation to Study Performance Degradation of Bipolar Transistors After Reverse-Bias Stress," Technical Digest of the 1991 International Electron Device Meeting (IEDM), pp. 873-876, December 1991.

K.-Y. Toh, J.D. Warnock, J.D. Cressler, K.A. Jenkins, D.A. Danner, and T.-C. Chen, "Sub-15 ps Gate Delay with New AC-Coupled Active Pull-Down ECL Circuit," Technical Digest of the 1991 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 136-138, September 1991.

J.D. Cressler, J.H. Comfort, E.F. Crabbé, G.L. Patton, J.M.C. Stork, J.Y.-C. Sun, and B.S.
Meyerson, "Profile Design Issues and Optimization of Epitaxial Si and SiGe-Base Bipolar Transistors and Circuits for 77K Applications," Technical Digest of the 1991 Symposium on VLSI Technology (VLSI), pp. 69-70, May 1991.

J.Y.-C. Sun, J.H. Comfort, J. Warnock, J.D. Cressler, G. Patton, J.M.C. Stork, J. Burghartz, D. Harame, E. Crabbé, P.-F. Lu, M. Arienzo, and B. Meyerson, "Advanced Bipolar Technology for the 1990's," Technical Digest of the 1991 Symposium on VLSI Technology, Systems, and Applications, pp. 269-273, May 1991.

J.D. Cressler, J.H. Comfort, E.F. Crabbé, G.L. Patton, W. Lee, J.Y.-C. Sun, J.M.C. Stork, and B.S. Meyerson, "The Performance Leverage of Epitaxial SiGe-Base Bipolar Transistors for 77K Applications," Extended Abstracts of the 1991 Electrochemical Society Spring Meeting (ECS), pp. 424-425, May 1991.

J.N. Burghartz, J.D. Cressler, K.A. Jenkins, J.Y.-C. Sun, J.M.C. Stork, J.H. Comfort, T.A. Brunner, and C.L. Stanis, "Device Design Issues for a High-Performance Bipolar Technology with Si or SiGe Epitaxial Base," Proceedings of the 21st European Solid State Device Research Conference (ESSDERC), May 1991.

J.D. Cressler, J.H. Comfort, E.F. Crabbé, G.L. Patton, W. Lee, J.Y.-C. Sun, J.M.C. Stork, and B.S. Meyerson, "Profile Leverage of Epitaxial SiGe-Base Bipolar Transistors for 77K Applications," Proceedings of the 1991 Symposium on Low-Temperature Electronics Device Operation, D. Foty, N. Saks, S. Raider, and G. Oleszek, Editors. Pennington, NJ: Electrochemical Society, pp. 230-237, 1991.

1986-1990 Papers

J.H. Comfort, G.L. Patton, J.D. Cressler, W. Lee, E.F. Crabbé, B.S. Meyerson, J.Y.-C. Sun, J.M.C. Stork, P.-F. Lu, J.N. Burghartz, J. Warnock, K.A. Jenkins, K.-Y. Toh, M. D'Agostino, and G. Scilla, "Profile Leverage in a Self-Aligned Epitaxial Si or SiGe Base Bipolar Technology," Technical Digest of the 1990 International Electron Device Meeting (IEDM), pp. 21-24, December 1990.

J. Warnock, P.-F. Lu, J.D. Cressler, K.A. Jenkins, and J.Y.C. Sun, "35 GHz / 35 psec ECL PNP Technology," Technical Digest of the 1990 International Electron Device Meeting (IEDM), pp. 301-304, December 1990.

E. Ganin, T.C. Chen, J.M.C. Stork, B.S. Meyerson, J.D. Cressler, G. Scilla, J. Warnock, D.L. Harame, G.L. Patton, and T.H. Ning, "Epitaxial-Base Double-Poly Self-Aligned Bipolar Transistors," Technical Digest of the 1990 International Electron Device Meeting (IEDM), pp. 603-606, December 1990.

J.N. Burghartz, J.H. Comfort, G.L. Patton, J.D. Cressler, B.S. Meyerson, J.M.C. Stork, J.Y.C. Sun, G. Scilla, J. Warnock, B. Ginsberg, K.A. Jenkins, K.Y. Toh, D. Harame, and S. Mader, "Sub-30pS ECL Circuits Using High-f<sub>T</sub> Si and SiGe Epitaxial Base SEEW Transistors," Technical Digest of the 1990 International Electron Device Meeting (IEDM), pp. 297-300, December 1990.

J.D. Cressler, "The Silicon Bipolar Transistor: A Candidate for High-Speed Applications at Liquid Nitrogen Temperature," Abstracts of the First International Conference on Low-Temperature Electronics: Semiconducting - Superconducting, p. 24, May 1990.

J.H. Comfort, P.-F. Lu, D.D. Tang, T.-C. Chen, J.Y.-C. Sun, B.S. Meyerson, W. Lee, J. Warnock, J.D. Cressler, K.-Y. Toh, and J.M. Cotte, "A 26pS Self-aligned Epitaxial Silicon Base Bipolar Technology," Technical Digest of the 1990 Symposium on VLSI Technology (VLSI), pp. 51-52, May 1990.

J. Warnock, P.-F. Lu, T.C. Chen, K.-Y. Toh, J.D. Cressler, K.A. Jenkins, D.D. Tang, J. Burghartz, J.Y-.C. Sun, C.T. Chuang, G.P. Li, and T.H. Ning, "A 27GHz 20pS PNP Technology," Technical Digest of the 1989 International Electron Device Meeting (IEDM), pp. 903-905, December 1989.

J.D. Cressler, T.C. Chen, J.D. Warnock, and D.D. Tang, "Sub-100pS Silicon Bipolar ECL Circuits at Liquid Nitrogen Temperatures," Proceedings of the 1989 Bipolar Circuits and Technology Meeting (BCTM), pp. 156-159, September 1989.

J.D. Cressler, D.D. Tang, and E.S. Yang, "The Effects of Injection Induced Bandgap Narrowing on Bipolar Transistors Operating at Low Temperatures," Technical Digest of the 1989 IEEE Workshop on Low Temperature Semiconductor Electronics, pp. 28-32, June 1989.

T.C. Chen, J.D. Cressler, K.Y. Toh, J. Warnock, P.-F. Lu, K.A. Jenkins, S. Basavaiah, M.P. Manny, H.Y. Ng, D.D. Tang, G.P. Li, C.T. Chuang, M.R. Polcari, M.B. Ketchen, and T.H. Ning, "A Submicron High Performance Bipolar Technology," Technical Digest of the 1989 Symposium on VLSI Technology (VLSI), pp. 87-88, May 1989.

J.D. Cressler, D.D. Tang, K.A. Jenkins, and G.P. Li, "Low Temperature Operation of Silicon Bipolar ECL Circuits," Technical Digest of the 1989 International Solid-State Circuits Conference (ISSCC), pp. 228-229, February 1989.

K.A. Jenkins and J.D. Cressler, "Electron Beam Damage of Advanced Silicon Bipolar Transistors and Circuits," Technical Digest of the 1988 International Electron Device Meeting (IEDM), pp. 30-33, December 1988.

T.C. Chen, D.D. Tang, C.Y. Chuang, J.D. Cressler, J. Warnock, G.P. Li, P.E. Biolsi, D.A. Danner, M.R. Polcari, and T.H. Ning, "A Sub-50 pS Single Poly Planar Bipolar Technology," Technical Digest of the 1988 International Electron Device Meeting (IEDM), pp. 740-743, December 1988.

J.D. Cressler, W. Hwang, and T.C. Chen, "On the Temperature Characteristics of Heavily Doped Polycrystalline Silicon Films," Extended Abstracts of the 1987 Electrochemical Society Fall Meeting (ECS), pp. 472-473, October 1987.

J.D. Cressler, W. Hwang, and T.C. Chen, "On the Temperature Characteristics of Heavily Doped Polycrystalline Silicon Films," Proceedings of the 1987 Symposium on Low-Temperature Electronics and High-Temperature Superconductors, S.I. Raider, R. Kirschman, H. Hayakawa and H. Ohta, Editors. Pennington, NJ: Electrochemical Society, pp. 117-122, 1988.

T.C. Chen, C.T. Chuang, G.P. Li, J.D. Cressler, E.D. Petrillo, S.B. Brodsky, R.N. Shultz, M.R. Polcari, M.B. Ketchen, and D.D. Tang, "An Advanced Bipolar Transistor with Self-Aligned Ion-Implanted Base with W/Poly Emitter," Proceedings of the 1987 Bipolar Circuits and Technology Meeting (BCTM), pp. 31-33, September 1987.

J.M.C. Stork and J.D. Cressler, "The Impact of Non-Ohmic Polysilicon Emitter Resistance on Bipolar Transistor Performance," Technical Digest of the 1986 Symposium on VLSI Technology (VLSI), pp. 47-48, May 1986.

D.D. Tang, G.P. Li, C.T. Chuang, M. Manny, T.C. Chen, E. Hackbarth, J.D. Cressler, B.J. Ginsberg, E.J. Petrillo, T.H. Ning, C.C. Hu, and H.J. Park, "73pS Si Bipolar ECL Circuits," Technical Digest of the 1986 International Solid-State Circuits Conference (ISSCC), pp. 104-105, February 1986.