Journal Papers
2006 | 2005 | 2004 | 2003 | 2002 | 2001 | 2000 | 1999 | 1998 | 1997 | 1996 | 1995 | 1994 | 1993 | 1992 | 1991 | 1990 - 1986
B.M. Haugerud, J.P. Comeau, A.K. Sutton, A.P.G. Prakash, J.D. Cressler, P.W. Marshall, C.J. Marshall, R.L. Ladbury, M. El-Diwany, C. Mitchell, R. Lawrence, and N. Haddad, “Proton and Gamma Radiation Effects in a New First-Generation SiGe HBT Technology,” Solid-State Electronics, vol. 50, pp. 181-190, 2006.
E. Zhao, R. Krithivasan, A.K. Sutton, Z. Jin, J.D. Cressler, B. El-Kareh, S. Balster, and H. Yasuda, “An Investigation of Low-Frequency Noise in Complementary SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 53, pp. 329-338, 2006.
J. Comeau and J.D. Cressler, “A 28 GHz SiGe Up-conversion Mixer Using a Series-Connected Triplet for Higher Dynamic Range and Improved IF Port Return Loss,” IEEE Journal of Solid-State Circuits, vol. 41, pp. 560-565, 2006.
J. Lee and J.D. Cressler, “Analysis and Design of an Ultra-Wideband Low Noise Amplifier Using Resistive Feedback in SiGe HBT Technology,” IEEE Transactions on Microwave Theory and Techniques, vol. 54, pp. 1262-1268, 2006.
Y. Park, C.-H. Lee, J.D. Cressler, and J. Laskar, “The Analysis of UWB SiGe HBT LNA for Noise, Linearity, and Minimum Group Delay Variation,” IEEE Transactions on Microwave Theory and Techniques, vol. 54, pp. 1687-1697, 2006.
R. Krithivasan, Y. Lu, J.D. Cressler, J.-S. Rieh, M.H. Khater, D. Ahlgren, and G. Freeman, “Half-TeraHertz Operation of SiGe HBTs,” IEEE Electron Device Letters, vol. 27, pp. 567-569, 2006.
Q. Liang, R. Krithivasan, A. Ahmed, Y. Lu, Y. Li, J.D. Cressler, G. Niu, J.-S. Rieh, G. Freeman, D. Ahlgren, and A. Joseph, “Analysis and Understanding of Novel Cryogenic Phenomena in State-of-the-art SiGe HBTs,” Solid-State Electronics, vol. 50, pp. 964-972, 2006.
T. Chen, L. Najafizadeh, C. Zhu, A. Ahmed, R. Diestelhorst, G. Espinel, and J.D. Cressler, “CMOS Reliability Issues for Emerging Cryogenic Lunar Electronics Applications,” Solid-State Electronics, vol. 50, pp. 959-963, 2006.
W.-M.L. Kuo, R. Krithivasan, X., Li, Y. Lu, J.D. Cressler, and H. Gustat, “A Low-Power, X-Band SiGe HBT Low-Noise Amplifier for Near-Space Radar Applications,” IEEE Microwave and Wireless Components Letters, vol. 16, pp. 520-522, 2006.
Y. Park, C.-H. Lee, J.D. Cressler, and J. Laskar, “Theoretical Analysis of a Low Dispersion SiGe LNA for Ultra-wideband Applications,” IEEE Microwave and Wireless Components Letters, vol. 16, pp. 517-519, 2006.
T. Chen, A.K. Sutton, B.M. Haugerud, W. Henderson, A.P.G. Prakash, J.D. Cressler, A. Doolittle, X. Liu, A. Joseph, and P.W. Marshall, “An Investigation of the Effects of Radiation Exposure and Thermal Annealing on Stability Constraints in Epitaxial SiGe Strained Layers,” Solid-State Electronics, vol. 50, pp. 1194-1200, 2006.
E. Zhao, J.D. Cressler, M. El-Diwany, T. Krakowski, A. Sadovnikov, and D. Kokoski, “On the Geometrical Dependence of Low-Frequency Noise in SiGe HBTs,” Solid-State Electronics, vol. 50, pp. 1748-1755, 2006.
M. Morton, J. Comeau, J.D. Cressler, M. Mitchell, and J. Papapolymerou, “Sources of Phase Error and Design Considerations for Silicon-based Monolithic High-Low Pass Microwave Phase Shifters,” IEEE Transactions on Microwave Theory and Techniques, vol. 54, pp. 4032-4040, 2006.
J. Metcalfe, D.E. Dorfan, A. A. Grillo, A. Jones, M. Mendoza, M Rogers, H. F.-W. Sadrozinski, A. Seiden, E. Spencer, M. Wilder, J.D. Cressler, G. Prakash, and A. Sutton, “Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24 GeV Proton Exposure,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3889-3893, 2006.
A.K. Sutton, A.P.G. Prakash, R.M. Diestelhorst, G. Espinel, B. Jun, M. Carts, A. Phan, J.D. Cressler, P.W. Marshall, C.J. Marshall, R.A. Reed, R.D. Schrimpf, and D.M. Fleetwood, “An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3166-3174, 2006.
A.P.G. Prakash, A.K. Sutton, R. Diestelhorst, G. Espinel, J. Andrews, B. Jun, J.D. Cressler, P.W. Marshall, and C.J. Marshall, “The Effects of Irradiation Temperature on the Proton Response of SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3175-3181, 2006.
M. Bellini, B. Jun, T. Chen, J.D. Cressler, P.W. Marshall, D. Chen, and J. Cai, “Radiation and Bias Effects in Fully-Depleted and Partially-Depleted SiGe HBTs Fabricated on CMOS-Compatible SOI,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3182-3186, 2006.
B. Jun, R. Diestelhorst, M. Bellini, G. Espinel, A.P.G. Prakash, J.D. Cressler, D. Chen, R.D. Schrimpf, and D.M. Fleetwood, “Temperature-Dependence of Gate-Induced Drain Leakage in X-Ray Irradiated 130 nm CMOS Devices,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3203-3209, 2006.
L. Najafizadeh, M. Bellini, G. Espinel, A.P.G. Prakash, J.D. Cressler, P.W. Marshall, and C.J. Marshall, “Proton Tolerance of SiGe Precision Voltage References For Extreme Temperature Range Electronics,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3210-3216, 2006.
A.D. Tipton, J.A. Pellish, R.A. Reed, R.D. Schrimpf, R.A. Weller, M.H. Mendenhall, A.K. Sutton, R. Diestelhorst, G. Espinel, J.D. Cressler, P.W. Marshall, and G. Vizkelethy, “Multiple-Bit Upset in 130 nm CMOS Technology,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3259-3264, 2006.
A.K. Sutton, R. Krithivasan, P.W. Marshall, S. Buchner, M. Carts, C. Siedleck, R. Ladbury, J.D. Cressler, C. Marshall, S. Currie, R. Reed, G. Niu, B. Randall, K. Fritz, D. McMorrow, and B. Gilbert, “SEU Error Signature Analysis of Gbit/sec SiGe Logic Circuits Using a Pulsed Laser Microprobe,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3277-3284, 2006.
J.A. Pellish, R.A. Reed, M.L. Alles, R.D. Schrimpf, M. Varadharajaperumal, G. Niu, A.K. Sutton, R. Diestelhorst, G. Espinel, R. Krithivasan, J.P. Comeau, J.D. Cressler, G. Vizkelethy, P.W. Marshall, R.A. Weller, M.H. Mendenhall, and E.J. Montes, “Substrate Engineering and Charge Collection Mitigation in Deep Trench Isolation Devices,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3298-3305, 2006.
R. Krithivasan, P.W. Marshall, M. Nayeem, A.K. Sutton, W.-M.L. Kuo, B.M. Haugerud, J.D. Cressler, L. Najafizadeh, M.A. Carts, C.J. Marshall, G. Niu, R.A. Reed, D. Hansen, K. Jobe, B.A. Randall, C.A. Burfield, and B. Gilbert, “The Application of RHBD Techniques to SEU Hardening of Third-Generation SiGe HBT Logic Circuits,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3400-3407, 2006.
W.-M. Kuo, J.D. Cressler, Y.J. Chen, and A.J. Joseph, "A 21 GHz Inductor-less Quadrature Ring oscillator Implemented in SiGe HBT Technology," Journal of Materials Science in Semiconductor Processing, vol. 8, pp. 445-449, 2005.
Q. Liang, G. Niu, J.D. Cressler, S. Taylor, and D. Harame, "On the Optimization and Design
of SiGe HBT Cascode Low-Noise Amplifiers," Solid-State Electronics, vol. 49, pp. 329-341,
2005.
B. Banerjee, S. Venkataraman, Y. Lu, S. Nuttinck, D. Heo, Y.-J.E. Chen, J.D. Cressler, J. Laskar, G. Freeman, and D. Ahlgren, "Cryogenic Operation of Third-Generation, 200 GHz Peak fT, Silicon-Germanium Heterojunction Bipolar Transistors," IEEE Transactions on Electron Devices, vol. 52, pp. 585-593, 2005.
J. Lee, J.D. Cressler, and A. Joseph, "A f SiGe HBT Monolithic Active Isolator for Improving Reverse Isolation in Wireless Systems," IEEE Microwave and Wireless Components Letters, vol. 15, pp. 220-222, 2005.
Y.-J.E. Chen, W.-M.L. Kuo, Z. Jin, J. Lee, Y. Tretiakov, J.D. Cressler, J. Laskar, and G. Freeman, "A Low-Power, Ka-Band Voltage-Controlled Oscillator Implemented in 200 GHz SiGe HBT Technology," IEEE Transactions on Microwave Theory and Techniques, vol. 53, pp. 1672-1681, 2005.
C. Zhu, Q. Liang, R. Al-Huq, J.D. Cressler, Y. Lu, T. Chen, A. Joseph, and G. Niu, "Damage Mechanisms in Impact-Ionization-Induced "Mixed-Mode" Reliability Degradation of SiGe HBTs," IEEE Transactions on Device and Materials Reliability, vol. 5, pp. 142-149, 2005.
R. Mukhopadhyay, Y. Park, N. Sritattana, S. Nuttinck, J. Laskar, J.D. Cressler,
and A. Joseph, “Reconfigurable RFICs in Si-based Technologies for a
Compact Intelligent RF Front-end,” IEEE Transactions on Microwave Theory
and Techniques, vol. 53, pp. 81-93, 2005.
W.-M.L. Kuo, J.D. Cressler, Y.-J.E. Chen, A.J. Joseph, “An Inductorless Ka-Band SiGe HBT Ring Oscillator,” IEEE Microwave and Wireless Components Letters, vol. 15, pp. 682-684, 2005.
B.M. Haugerud, M.B. Nayeem, R. Krithivasan, Y. Lu, C. Zhu, J.D. Cressler, R.E. Belford, A.J. Joseph, “The Effects of Mechanical Planar Biaxial Strain in Si/SiGe HBT BiCMOS Technology,” Solid-State Electronics, vol. 46, pp. 986-990, 2005.
G. Niu, H. Yang, M. Varadharajaperumal, Y. Shi, J.D. Cressler, R. Krishivasan, P.W. Marshall, and R. Reed, “A New Back Junction Approach For Reducing Charge Collection in 200 GHz SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 52, pp. 2153-2157, 2005.
A.K. Sutton, B.M. Haugerud, A.P.G. Prakash, J.D. Cressler, C.J. Marshall, P.W. Marshall, R. Ladbury, F. Guarin, and A.J. Joseph, “Comparison of Gamma and Proton Radiation Damage in 200GHz SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 52, pp. 2358-2365, 2005.
T. Chen, A.K. Sutton, B.M. Haugerud, J.P. Comeau, M. Bellini, Q. Liang, J.D. Cressler, J. Cai, T.H. Ning, P.W. Marshall, and C.J. Marshall, “Proton Radiation Effects in Vertical SiGe HBTs Fabricated on CMOS-Compatible SOI,” IEEE Transactions on Nuclear Science, vol.52, pp. 2353-2357, 2005.
P. Marshall, M. Carts, S. Currie, R. Reed, B. Randall, K. Fritz, K. Kennedy, R. Krithivasan, C. Siedleck, R. Ladbury, J.D. Cressler, D. McMorrow, Steve Buchner, C. Marshall, K. LaBel, and B. Gilbert, “Autonomous Bit Error Rate Testing at Multi-Gbit/s Rates Using a Circuit for Radiation Effects Self Test (CREST),” IEEE Transactions on Nuclear Science, vol. 52, pp. 2446-2454, 2005.
C.M. Grens, B.M. Haugerud, A.K. Sutton, T. Chen, J.D. Cressler, P.W. Marshall, C.J. Marshall, and A.J. Joseph, “The Effects of Proton Irradiation on the Operating Voltage Constraints of SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 52, pp. 2403-2407, 2005.
Q. Liang, J. Andrews, J.D. Cressler, and G. Niu, “Systematic Linearity Analysis of RFIC’s Using A Two-Port Lumped-Nonlinear-Source Model,” IEEE Transactions on Microwave Theory and Techniques, vol. 53, pp. 1745-1755, 2005.
W.-M. Kuo, J.D. Cressler, Y.J. Chen, and A.J. Joseph, "A 21 GHz Inductor-less
Quadrature Ring oscillator Implemented in SiGe HBT Technology," Journal of Materials
Science in Semiconductor Processing, vol. 8, pp. 445-449, 2004.
J. Johansen, Z. Jin, J.D. Cressler, Y. Cui, G. Niu, Q. Liang,
J.-S. Rieh, G. Freeman, D. Ahlgren, and A. Joseph, “On the Scaling Limits
of Low-Frequency Noise in SiGe HBTs,” Solid-State Electronics, pp. 1897-1900,
2004.
T. Chen, W.-M. L. Kuo, E. Zhao, Q. Liang, Z. Jin, J.D. Cressler, and A. Joseph,
“On the High-Temperature (to 300C) characteristics of SiGe HBTs,”
IEEE Transactions on Electron Devices, vol. 51, pp. 1825-1832, 2004.
P. Gnana Prakash, John D. Cressler, S.C. Ke, and K. Siddappa, “Impact
of High-energy Irradiation Effects on n-channel MOSFETs,” Indian Journal
of Physics, vol. 78, pp. 1187-1192, 2004.
A. Sutton, B. Haugerud, Y. Lu, W.-M.L. Kuo, J.D. Cressler, P. Marshall, R.
Reed, J.-S. Rieh, G. Freeman, and D. Ahlgren, “Proton Response of 4th-Generation
350 GHz UHV/CVD SiGe HBTs,” IEEE Transactions on Nuclear Science, vol.
51, pp. 3736-3742, 2004.
W.-M.L. Kuo, Y. Lu, B. Floyd, B. Haugerud, A. Sutton, R. Krithivasan, J.D.
Cressler, B. Gaucher, P. Marshall, R. Reed, J.-S. Rieh, and G. Freeman, “Total
Dose Tolerance of Monolithic Millimeter-wave Transceiver Building Blocks in
200 GHz SiGe Technology,” IEEE Transactions on Nuclear Science, vol.
51, pp. 3781-3787, 2004.
E. Zhao, A. Sutton, B. Haugerud, J.D. Cressler, P. Marshall, R. Reed, B. El-Kareh,
and S. Balster, “The Effects of Radiation on 1/f Noise in Complementary
(npn + pnp) SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 51,
pp. 3243-3249, 2004.
J. Comeau, A. Sutton, B. Haugerud, J.D. Cressler, W.-M.L. Kuo, P. Marshall,
R. Reed, A. Karroy, and R. Van Art, “Proton Tolerance of Advanced SiGe
HBTs Fabricated on Different Substrate Materials,” IEEE Transactions
on Nuclear Science, vol. 51, pp. 3743-3747, 2004.
Z. Luo, A. Ahyi, T. Chen, A. Sutton, B. Haugerud, J.D. Cressler, D. Sheridan, J. Williams, P. Marshall, and R. Reed, “The Effects of Radiation Type on the Tolerance of High-Power 4H-SiC Diodes,” IEEE Transactions on Nuclear Science, vol. 51, pp. 3748-3752, 2004.
J. Andrews, M. Morton, J. Lee, J. Papapolymerou, J.D. Cressler,
A. Sutton, B. Haugerud, P. Marshall, R. Reed, and D. Cho, “The Effects
of Proton Radiation on the Performance of mm-wave Transmission Lines Implemented
in SiGe Technology,” IEEE Transactions on Nuclear Science, vol. 51,
pp. 3907-3810, 2004.
D. Brinkley, C. Hopper, J.D. Cressler, M. Mojarradi, and B. Blalock, “Noise
Performance of 0.35um SOI CMOS Devices and Micropower Preamplifier Following
63-MeV 1-Mrad(Si) Proton Irradiation,” IEEE Transactions on Nuclear
Science, vol. 51, pp. 3788-3794, 2004.
M. Varadharajapermumal, G. Niu, J.D. Cressler, R. Reed,
P. Marshall, and A. Joseph, “3-D Simulation of Heavy-ion Induced Charge
Collection in SiGe HBTs on SOI,” IEEE Transactions on Nuclear Science,
vol. 51, pp. 3298-3303, 2004.
Z. Jin, J.D. Cressler, G. Niu, P.W. Marshall, H.S. Kim, R. Reed, and A. Joseph, “Proton Response of Low- Frequency Noise in 0.20 µm 90 GHz fT UHV/CVD SiGe HBTs,” Solid-State Electronics, vol. 47, pp. 39- 44, 2003.
Y. Li, G. Niu, J.D. Cressler, J. Patel, M. Liu, R. Reed, M.M. Mojarradi, and B.J. Blalock, “The Operation of 0.35µm Partially-Depleted SOI CMOS Technology in Extreme Environments,” Solid-State Electronics, vol. 47, pp. 1111-1115, 2003.
Z. Jin, J.D. Cressler, G. Niu, and A. Joseph, “Impact of Geometrical Scaling on Low-Frequency Noise in SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 50, pp. 676-682, 2003.
Y. Shi, G. Niu, J.D. Cressler, and D.L. Harame, “On the Consistent Modeling of Bandgap Narrowing for Accurate Device-Level Simulation of Scaled SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 50, pp. 1370-1377, 2003.
S. Zhang, J.D. Cressler, G. Niu, C. Marshall, P. Marshall, H. Kim, R. Reed, M. Palmer, A. Joseph, and D. Harame, “The Effects of Operating Bias Conditions on the Proton Tolerance of SiGe HBTs,” Solid-State Electronics, vol. 47, pp. 1729-1734, 2003.
Q. Liang, J.D. Cressler, G. Niu, Y. Lu, G. Freeman, D. Ahlgren, R.M. Malladi, K. Newton, and D.L. Harame, “A Simple 4-Port Parasitic De-embedding Methodology for High-Frequency Scattering Parameter and Noise Characterization of SiGe HBTs,” IEEE Transactions on Microwave Theory and Techniques, vol. 51, pp. 2165-2174, 2003.
M. Varadharajaperumal, G. Niu, R. Krithivasan, J.D. Cressler, R.A. Reed, P.W. Marshall, G. Vizkelethy, P.E. Dodd, and A.J. Joseph, “3D Simulation of Heavy-Ion Induced Charge Collection in SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 50, pp. 2191-2198, 2003.
R. Krithivasan, G. Niu, J.D. Cressler, S.M. Currie, K.E. Fritz, R.A. Reed, P.W. Marshall, P.A. Riggs, B.A. Randall, and B. Gilbert,” An SEU Hardening Approach for High-Speed SiGe HBT Digital Logic,” IEEE Transactions on Nuclear Science, vol. 50, pp. 2126-2134, 2003.
Y. Lu, J.D. Cressler, R. Krithivasan, Y. Li, R.A. Reed, P.W. Marshall, C. Polar, G. Freeman, and D. Ahlgren, “Proton Tolerance of Third-Generation, 0.12 µm 185 GHz SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 50, pp. 1811-1815, 2003.
J.D. Cressler, R. Krithivasan, A.K. Sutton, J.E. Seiler, J.F. Krieg, S.D. Clark, and A.J. Joseph, “The Impact of Gamma Irradiation on SiGe HBTs Operating at Cryogenic Temperatures,” IEEE Transactions on Nuclear Science, vol. 50, pp. 1805-1810, 2003.
Y. Li, J.D. Cressler, Y. Lu, J. Pan, G. Niu, R.A. Reed, P.W. Marshall, C. Polar, M.J. Palmer, and A.J. Joseph, “Proton Tolerance of Multiple-Threshold Voltage and Multi-Breakdown Voltage CMOS Device Design Points in a 0.18µm System-on-a-Chip CMOS Technology,” IEEE Transactions on Nuclear Science, vol. 50, pp. 1834-1838, 2003.
Y. Li, G. Niu, J.D. Cressler, J. Patel, M. Liu, M.M. Mojarradi, R.A. Reed, P.W. Marshall, and B.J. Blalock, “Probing Proton Damage in SOI CMOS Technology by Using Lateral Bipolar Action,” IEEE Transactions on Nuclear Science, vol. 50, pp. 1885-1890, 2003.
R.A. Reed, P.W. Marshall, J. Pickel, M.A. Carts, T. Irwin, G. Niu, J.D. Cressler, R. Krithivasan, K. Fritz, P. Riggs, J. Prairie, B. Randall, B. Gilbert, G. Vizkelethy, P. Dodd, and K. LaBel, “Heavy-Ion Broad-Beam and Microprobe Studies of Single-Event Upsets in 0.20 µm Silicon Germanium Heterojunction Bipolar Transistors and Circuits,” IEEE Transactions on Nuclear Science, vol. 50, pp. 2184-2190, 2003.
Z. Jin, J.A. Johansen, J.D. Cressler, R.A. Reed, P.W. Marshall, and A.J. Joseph, “Using Proton Irradiation to Probe the Origins of Low-Frequency Noise Variations in SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 50, pp. 1816-1820, 2003.
Z. Luo, T. Chen, J.D. Cressler, D.C. Sheridan, J.R. Williams, R.A. Reed, and P.W. Marshall, “Impact of Proton Irradiation on the Static and Dynamic Characteristics of High-Voltage 4H-SiC JBS Switching Diodes,” IEEE Transactions on Nuclear Science, vol. 50, pp. 1821-1826, 2003.
W. Chen, V. Pouget, H.J. Barnaby, J.D. Cressler, G. Niu, P. Fouillat, Y. Deval, and D. Lewis, “Investigation of Single-Event Transients in Voltage Controlled Oscillators,” IEEE Transactions on Nuclear Science, vol. 50, pp. 2081-2087, 2003.
T. Chen, Z. Luo, J.D. Cressler, T. Isaacs-Smith, J. Williams, G. Chung, and S. Clark, “The Effects of NO Passivation on the Radiation Response of Gate Oxides for 4H-SiC Power MOSFETs,” Solid-State Electronics, vol. 46, pp. 2231-2235, December 2002.
J. Tang, G. Niu, Z. Jin, J.D. Cressler, S. Zhang, A.J. Joseph, and D.L. Harame, “Modeling and Characterization of SiGe HBT Low-frequency Noise Figures-of-Merit for RFIC Applications,” IEEE Transactions on Microwave Theory and Techniques, vol. 50, pp. 2467-2473, November 2002.
Q. Liang, J.D. Cressler, G. Niu, R. Malladi, K. Newton, and D.L. Harame, “A Physics- based, High-Injection Transit-time Model Applied to Barrier Effects in SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 49, 1807-1813, October 2002.
G. Niu, J.D. Cressler, S. Zhang, and D. Harame, “Noise-Gain Tradeoff in RF SiGe HBTs,” Solid-State Electronics, vol. 46, pp. 1445-1452, September 2002.
G. Zhang, J.D. Cressler, L. Lanzerotti, R. Johnson, Z. Jin, S. Zhang, G. Niu, and A. Joseph, and D. Harame, “Electric Field Effects Associated with the Backside Ge Profile in SiGe HBTs,” Solid-State Electronics, vol. 46, pp. 655-659, May 2002.
S. Zhang, G. Niu, J.D. Cressler, A. Joseph, G. Freeman, and D. Harame, “The Effects of Geometrical Scaling on the RF Performance of SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 49, pp. 429-435, March 2002.
2001 Papers
Z. Jin, G. Niu, J.D. Cressler, C. Marshall, P. Marshall, H. Kim, R. Reed, and D. Harame, “1/f Noise in Proton-Irradiated SiGe HBTs,“ IEEE Transactions on Nuclear Science, vol. 48, pp. 2244-2249, December 2001.
G. Niu, R. Krithivasan, J.D. Cressler, P. Marshall, C. Marshall, R. Reed, and D. Harame, “Modeling of Single Event Effects in Circuit-Hardened High-Speed SiGe HBT Logic,” IEEE Transactions on Nuclear Science, vol. 48, pp. 1849-1854, December 2001.
Y. Li, G. Niu, J.D. Cressler, J. Patel, C. Marshall, P. Marshall, H. Kim, R. Reed, and M. Palmer, “Anomalous Radiation Effects in Fully-Depleted SOI MOSFETs Fabricated on SIMOX,” IEEE Transactions on Nuclear Science, vol. 48, pp. 2146-2151, December 2001.
J.D. Cressler, M. Hamilton, R. Krithivasan, H. Ainspan, R. Groves, G. Niu, S. Zhan, Z. Jin, C. Marhsall, P.Marshall, H. Kim, R. Reed, M. Palmer, A. Joseph, and D. Harame, “Proton Response of SiGe HBT Analog and RF Circuits and Passives,” IEEE Transactions on Nuclear Science, vol. 48, pp. 2238-2243, December 2001.
S. Zhang, G. Niu, J.D. Cressler, H. Osten, D. Knoll, C. Marshall, P. Marshall, H. Kim, and R. Reed, “The Effects of Proton Irradiation on SiGe:C HBTs,” IEEE Transactions on Nuclear Science, vol. 48, pp. 2233-2237, December 2001.
D. Sheridan, G. Chung, S. Clark, and J.D. Cressler, “The Effects of High-Dose Gamma Irradiation on High-Voltage 4H-SiC Schottky Diodes and the SiC/SiO2 Interface,” IEEE Transactions on Nuclear Science, vol. 48, pp. 2229-2232, December 2001.
G. Niu, J.D. Cressler, S. Zhang, W. Ansley, C. Webster, “A Unified Approach to RF and Microwave Noise Parameter Modeling of Bipolar Transistors,” IEEE Transactions on Electron Devices, vol. 48, pp. 2568-2574, November 2001.
D.C. Sheridan, G. Niu, and J.D. Cressler, “Design of Planar and Non-planar Junction Termination Extension Structures For SiC Power Devices,” Solid-State Electronics, vol. 45, pp. 1659-1664, September 2001.
G. Niu, Z. Jin, J.D. Cressler, R. Rapeta, S. Zhang, C. Webster, A. Joseph, and D. Harame, “Transistor Noise in SiGe HBT RF Technology,” IEEE Journal of Solid-State Circuits, vol. 36, pp. 1424-1427, September 2001.
G. Niu, Q. Liang, J.D. Cressler, C.S. Webster, and D.L. Harame, “RF Linearity Characteristics of SiGe HBTs,” IEEE Transactions on Microwave Theory and Techniques, vol. 49, pp. 1558-1565, September 2001.
G. Niu, J.B. Juraver, M. Borgarino, Z. Jin, J.D. Cressler, R. Plana, O. Llopis, S.J. Mathew, S. Zhang, S. Clark, and A.J. Joseph, “Impact of Gamma Irradiation on the RF Phase Noise Capability of UHV/CVD SiGe HBTs,” Solid-State Electronics, vol. 45, pp. 107-112, 2001.
2000 Papers
J.D. Cressler, M.C. Hamilton, G.S. Mullinax, Y. Li, G.F. Niu, C.J. Marshall, P.W. Marshall, H.S. Kim, M.J. Palmer, A.J. Joseph, and G. Freeman, “The Effects of Proton Irradiation on the Lateral and Vertical Scaling of UHV/CVD SiGe HBT BiCMOS Technology,” IEEE Transactions on Nuclear Science, vol. 47, pp.2515-2520, 2000.
S. Zhang, G.F. Niu, J.D. Cressler, S.J. Mathew, S.D. Clark, P. Zampardi, and R.L. Pierson, “A Comparison of The Effects of Gamma Irradiation on SiGe HBT and GaAs HBT Technologies,” IEEE Transactions on Nuclear Science, vol. 47, pp. 2521-2527, 2000.
G.F. Niu, J.D. Cressler, M. Shoga, K. Jobe, P. Chu, and D.L. Harame, “Simulation of SEE-Induced Charge Collection in UHV/CVD SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 47, pp. 2682-2689, 2000.
G. Zhang, J.D. Cressler, G. Niu, and A. Pinto, “A Comparison of npn and pnp Profile Design Tradeoffs for Complementary SiGe HBT Technology,” Solid-State Electronics, vol. 44, pp. 1949-1954, 2000.
G.F. Niu, S. Zhang, J.D. Cressler, A. Joseph, J. Fairbanks, L. Larson, C. Webster, D.L. Harame, “Noise Parameter Modeling and SiGe Profile Design Trade-offs for RF applications,” IEEE Transactions on Electron Devices, vol. 47, pp. 2037-2044, 2000.
D.C. Sheridan, J.B. Casady, C.E. Ellis, R.R. Siergiej, J.D. Cressler, R.M. Strong, W.M. Urban, W.F. Valek, C.F. Seiler, and H. Buhay, “Demonstration of Deep (80um) RIE Etching of SiC for MEMS and MMIC Applications,” Materials Science Forum, vols. 338-342, pp. 1053-1056, 2000.
D.C. Sheridan, G. Niu, J.N. Merret, J.D. Cressler, C. Ellis, C.C. Tin, and R.R. Siergiej, “Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination,” Materials Science Forum, vols. 338-342, pp. 1339-1342, 2000.
G.F. Niu, J.D. Cressler, S.J. Mathew, and S. Subbanna, “Cryogenic Temperature Non-scaling of Linear Resistance in nMOSFETs Exhibiting Reverse Short-Channel Effect,” Solid-State Electronics, vol. 44, pp. 1507-1509, 2000.
D.C. Sheridan, G. F. Niu, J.N. Merrett, J.D. Cressler, C. Ellis, and C.C. Tin, “Design and Fabrication of Planar Guard Ring Termination for High-voltage SiC Diodes,” Solid-State Electronics, vol. 44, pp. 1367-1372, 2000.
G.F. Niu, S.J. Mathew, J.D. Cressler, and S. Subbanna, “A Novel Channel Resistance Ratio Method for Effective Channel Length and Series Resistance Extraction in MOSFET’s,” Solid-State Electronics, vol. 44, pp. 1187-1189, 2000.
U. Gogineni, J.D. Cressler, G.F. Niu, and D.L. Harame, “Hot Electron and Hot Hole Degradation of SiGe Heterojunction Bipolar Transistors,” IEEE Transactions on Electron Devices, vol. 47, pp. 1440-1448, 2000.
G.F. Niu, J.D. Cressler, S.J. Mathew, and S. Subbanna, “A Channel Resistance Derivative Method for Effective Channel Length Extraction in LDD MOSFETs,” IEEE Transactions on Electron Devices, vol. 47, pp. 648-650, 2000.
R. Shivaram, G.F. Niu, J.D. Cressler, and E.T. Croke, “The Effect of Carbon Content on the Minority Carrier Lifetime in Lattice-Matched p+-Si/p-SiGeC/n-Si/n+ Si Diodes,” Solid-State Electronics, vol. 44, pp. 559-564, 2000.
S.L. Salmon, J.D. Cressler, R.C. Jaeger, and D.L. Harame, “The Impact of Ge Profile Shape on the Operation of SiGe HBT Precision Voltage References,” IEEE Transactions on Electron Devices, vol. 47, pp. 292-298, 2000.
1999 Papers
G.F. Niu, S.J. Mathew, G. Banerjee, J.D. Cressler, S.D. Clark, M. Palmer, and S. Subbanna, “Total Dose Effects on the Shallow-Trench Isolation Leakage Characteristics in a 0.35?m SiGe BiCMOS Technology,” IEEE Transactions on Nuclear Science, vol. 46, pp. 1841-1847, 1999.
G. Banerjee, G.F. Niu, J.D. Cressler, S.D. Clark, M. Palmer, and D. Ahlgren, “Anomalous Dose Rate Effects in Gamma Irradiated SiGe Heterojunction Bipolar Transistors,” IEEE Transactions on Nuclear Science, vol. 46, pp.1620-1626, 1999.
S.J. Mathew, G.F. Niu, S.D. Clark, J.D. Cressler, M. Palmer, and W. Dubbelday, “Radiation Induced Back-Channel Leakage in SiGe CMOS on Silicon-on-Sapphire Technology,” IEEE Transactions on Nuclear Science, vol. 46, pp.1848-1853, 1999.
G.F. Niu, J.D. Cressler, S. Zhang, U. Gogineni, and D.C. Ahlgren, “Measurement of Collector-Base Junction Avalanche Multiplication Effects in Advanced UHV/CVD SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 46, pp. 1007-1015, 1999.
S. Zhang, G.F. Niu, S.D. Clark, J.D. Cressler, M. Palmer,
“The Effects of Proton Irradiation on the RF Performance of SiGe HBT’s,”
IEEE Transactions on Nuclear Science, vol. 46, pp. 1716-1721, 1999.
G.F. Niu and J.D. Cressler, “The Impact of Bandgap
Offset Distribution Between Conduction and Valance Band in Si-based Graded
HBT’s,” Solid-State Electronics, vol. 43, no. 12, pp. 2225-2230,
1999.
S.J. Mathew, G.F. Niu, W. Dubbelday, and J.D. Cressler, “Characterization
and Profile Optimization of SiGe Heterojunction pMOSFET on Silicon-On-Sapphire,”
IEEE Transactions on Electron Devices, vol. 46, no. 12, pp. 2323-2332, 1999.
G.F. Niu, J.D. Cressler, S. Mathew, and D. Ahlgren, “Enhanced
Low Temperature Corner Current-Carrying Inherent to Shallow-Trench Isolation
(STI),” IEEE Electron Device Letters, vol. 20, no. 10, pp. 520-522,
1999.
G.F. Niu, J.D. Cressler, S.J. Mathew, and S. Subbanna, “A
Total Resistance Slope-Based Effective Channel Mobility Extraction Method
for Deep Submicron CMOS technology,” IEEE Transactions on Electron Devices,
vol. 46, no. 9, pp. 1912-1914, 1999.
A.J. Joseph, J.D. Cressler, D.M. Richey, and D.L. Harame, and G.F. Niu, “Optimization of SiGe HBTs for Operation at High Current Densities,” IEEE Transactions on Electron Devices, vol. 46, no. 7, pp. 1347-1356, 1999.
S.J. Mathew, G.F. Niu, W.B. Dubbelday, J.D. Cressler, J. Ott, J.O. Chu, P.M. Mooney, K.L. Kavanaugh, B.S. Meyerson, and I. Lagnado, “Hole Confinement and Low-Frequency Noise in SiGe pFETs on Sapphire,” IEEE Electron Device Letters, vol. 20, no. 4, pp. 173-175, 1999.
G.F. Niu, J. D. Cressler, and A.J. Joseph, “A New General Purpose Common-Emitter Hybrid-? Small-Signal Equivalent Circuit for Bipolar Transistors with Significant Neutral Base Recombination,” IEEE Transactions on Electron Devices, vol. 46, no. 7, pp. 1347-1354, 1999.
1998 Papers
G.F. Niu, J.D. Cressler, and A.J. Joseph, “Quantifying Neutral Base Recombination and the Effects of Collector-Base Junction Traps in UHV/CVD SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 45, no. 12, pp. 2499-2504, 1998.
J. Roldán, G.F. Niu, W.E. Ansley, J.D. Cressler,
and S.D. Clark, “An Investigation of the Spatial Location of Proton-Induced
Traps in SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 45,
no. 6, pp. 2361-2365, 1998.
G.F. Niu, G. Banerjee, J.D. Cressler, J. Roldán, and S.D. Clark, “Electrical
Probing of Surface and Bulk Traps in Proton-Irradiated Gate-Assisted Lateral
pnp Transistors,” IEEE Transactions on Nuclear Science, vol. 45, no.
6, pp. 2424-2429,1998.
G.F. Niu, J. D. Cressler, U. Gogineni, and D. L. Harame, “Collector-Base
Avalanche Multiplication Effects in Advanced UHV/CVD SiGe HBTs,” IEEE
Electron Device Letters, vol. 19, pp. 288-290, 1998.
G.F. Niu, J. D. Cressler, and S.J.Mathew, “Explicit Formulation of a Series Resistance Correction Procedure for MOSFET Parameter Extraction and Its Accuracy Analysis,” Solid-State Electronics, vol. 42, pp. 1057-1058, 1998.
G.F. Niu, U. Gogineni, and J.D. Cressler, “Electron Impact-Ionization Effects in UHV/CVD SiGe HBTs in the Temperature Range of 300 to 83K,” Journal de Physique IV, Colloque C3 Supplément au Journal de Physique III, vol. 8, pp. 103-108,1998.
U. Gogineni, G.F. Niu, and J.D. Cressler, “Extraction of Collector-Base Resistance of UHV/CVD SiGe HBTs Operating at Low Temperatures,” Journal de Physique IV, Colloque C3 Supplément au Journal de Physique III, vol. 8, pp. 95-98,1998.
J.M. Roldán, J.D. Cressler, G.F. Niu, S.D. Clark, and D. Nguyen-Ngoc, “Gamma Radiation Tolerance of UHV/CVD SiGe BiCMOS Technology Operated at Cryogenic Temperatures,” Journal de Physique IV, Colloque C3 Supplément au Journal de Physique III, vol. 8, pp. 99-102,1998.
W.E. Ansley, J.D. Cressler, and D.M. Richey, “Base Profile Optimization for Minimum Noise Figure in Advanced UHV/CVD SiGe HBTs,” IEEE Transactions on Microwave Theory and Techniques, vol. 46, pp. 653-660, 1998.
J.D. Cressler, A.J. Joseph, S.L. Salmon, and D.L. Harame, “Device Design and Circuit Modeling Issues in Ultrahigh Vacuum / Chemical Vapor Deposition SiGe Heterojunction Bipolar Transistors,” Journal of Vacuum Science and Technology B, vol. 16, pp. 1516-1519, 1998.
1997 Papers
J. Roldán, W.E. Ansley, J.D. Cressler, S.D. Clark,
D. Nguyen-Ngoc, “Neutron Radiation Tolerance of Advanced UHV/CVD SiGe
HBT BiCMOS Technology,” IEEE Transactions on Nuclear Science, vol. 44,
pp. 1965-1973,1997.
A.J. Joseph, J.D. Cressler, D.M. Richey, R.C. Jaeger, and D.L. Harame, "Neutral
Base Recombination and Its Influence on the Temperature Dependence of Early
Voltage and Current Gain-Early Voltage Product in UHV/CVD SiGe Heterojunction
Bipolar Transistors," IEEE Transactions on Electron Devices, vol. 44,
pp. 404-413, 1997.
D.M. Richey, J.D. Cressler, and A.J. Joseph, "Scaling Issues and Ge Profile Optimization in Advanced UHV/CVD SiGe HBTs," IEEE Transactions on Electron Devices, vol. 44, pp. 431-440, 1997.
1996 Papers
L.S. Vempati, J.D. Cressler, J.A. Babcock, R.C. Jaeger, and D.L. Harame, "Low-Frequency Noise in UHV/CVD Epitaxial Si- and SiGe-base Bipolar Transistors," IEEE Journal of Solid-State Circuits, vol. 31, pp. 1458-1467, 1996.
A.J. Joseph, J.D. Cressler, and D.M. Richey, "Optimization of Early Voltage for Cooled SiGe HBT Precision Current Sources," Journal de Physique IV, Colloque C3 Supplément au Journal de Physique III, Vol. 6, pp. 125-130, 1996.
M.S. Latham, J.D. Cressler, A.J. Joseph, and R.C. Jaeger, "The Impact of Ge Grading on the Bias and Temperature Characteristics of SiGe HBT Precision Voltage References,"Journal de Physique IV, Colloque C3 Supplément au Journal de Physique III, Vol. 6, pp. 113-118, 1996.
J.B. Casady, J.D. Cressler, W.C. Dillard, D.C. Sheridan, R.W. Johnson, J.R. Williams, “Etching of 6H-SiC and 4H-SiC using NF3 in a Reactive Ion Etching System," Journal of the Electrochemical Society, vol. 143, pp. 1750-1753, 1996.
J.B. Casady, J.D. Cressler, W.C. Dillard, R.W. Johnson, A.K. Agarwal, and R.R. Siergiej, "DC Characterization of Depletion-mode 6H-SiC MOSFETs from 294K to 723K," Solid-State Electronics, vol. 39, pp. 777-784, 1996.
D.M. Richey, A.J. Joseph, J.D. Cressler, and R.C. Jaeger, "Evidence for Non-Equilibrium Base Transport in Si and SiGe Bipolar Transistors at Cryogenic Temperatures," Solid-State Electronics, vol. 39, pp. 785-789, 1996.
J.D. Cressler, L. Vempati, J.A. Babcock, R.C. Jaeger, and D.L. Harame," Low-frequency Noise Characteristics of UHV/CVD Si- and SiGe-base Bipolar Transistors," IEEE Electron Device Letters, vol. 17, pp. 13-15, 1996.
1995 Papers
J.A. Babcock, J.D. Cressler, L.S. Vempati, S.D. Clark, R.C. Jaeger, and D.L. Harame, "Ionizing Radiation Tolerance of High-Performance SiGe HBTs Grown by UHV/CVD," IEEE Transactions on Nuclear Science, vol. 42, pp. 1558-1566, 1995.
J.A. Babcock, J.D. Cressler, L.S. Vempati, S.D. Clark, R.C. Jaeger, and D.L. Harame, "Ionizing Radiation Tolerance and Low-Frequency Noise Degradation in UHV/CVD SiGe HBTs," IEEE Electron Device Letters, vol. 16, pp. 351-353, 1995.
A.J. Joseph, J.D. Cressler, and D.M. Richey, "Operation of SiGe Heterojunction Bipolar Transistors in the Liquid-Helium Temperature Regime," IEEE Electron Device Letters, vol. 16, pp. 268-270, 1995.
1994 Papers
D.M. Richey, J.D. Cressler, and R.C. Jaeger, "Numerical Simulation of SiGe HBTs at Cryogenic Temperatures," Journal de Physique IV, Colloque C6 Supplément au Journal de Physique III, Vol. 4, pp. 127-132, 1994.
J.D. Cressler, D.M. Richey, R.C. Jaeger, E.F. Crabbé, J.H. Comfort, and J.M.C. Stork, "High-Injection Barrier Effects in SiGe HBTs Operating at Cryogenic Temperatures," Journal de Physique IV, Colloque C6 Supplément au Journal de Physique III, Vol. 4, pp. 117-122, 1994.
J.D. Cressler, E.F. Crabbé, J.H. Comfort, J.Y.-C. Sun, and J.M.C. Stork, "An Epitaxial Emitter Cap SiGe-Base Bipolar Technology for Liquid-Nitrogen Temperature Operation," IEEE Electron Device Letters, vol. 15, pp. 472-474, 1994.
1993 Papers
J.D. Cressler, J. Warnock, D.L. Harame, J.N. Burghartz, K.A. Jenkins, and C.T. Chuang, "A High-Speed Complementary Silicon Bipolar Technology with 12 fJ Power-Delay Product," IEEE Electron Device Letters, vol. 14, pp. 523-526, 1993.
E.F. Crabbé, J.H. Comfort, J.D. Cressler, J.Y.-C. Sun, and J.M.C. Stork, "High-Low Polysilicon-Emitter SiGe-Base Bipolar Transistors," IEEE Electron Device Letters, vol. 14, pp. 478-480, 1993.
C.T. Chuang, J.D. Cressler, and J.D. Warnock, "AC-Coupled Complementary Push-Pull ECL Circuit with 34 fJ Power-Delay Product," Electronics Letters, vol. 29, pp. 1938-1939, 1993.
E. Kobeda, N.J. Mazzeo, J.P. Gambino, H. Ng, G.L. Patton, J.D. Warnock, S. Basavaiah, J.F. White, and J.D. Cressler, "Fabrication of Tungsten Local Interconnect for VLSI Bipolar Technology," Journal of the Electrochemical Society, Vol. 140, pp. 3007-3013, 1993.
E.F. Crabbé, J.D. Cressler, G.L. Patton, J.M.C. Stork, J.H. Comfort, and J.Y.-C. Sun, "Current Gain Roll-Off in Graded-Base SiGe Heterojunction Bipolar Transistors," IEEE Electron Device Letters, vol. 14, pp. 193-195, 1993.
J.D. Cressler, E.F. Crabbé, J.H. Comfort, J.M.C. Stork, and J.Y.-C. Sun, "On the Profile Design and Optimization of Epitaxial Si- and SiGe-base Bipolar Technology for 77K Applications - Part II: Circuit Performance Issues," IEEE Transactions on Electron Devices, vol. 40, pp. 542-556, 1993.
J.D. Cressler, J.H. Comfort, E.F. Crabbé, G.L. Patton, J.M.C. Stork, J.Y.-C. Sun, and B.S. Meyerson, "On the Profile Design and Optimization of Epitaxial Si- and SiGe-base Bipolar Technology for 77K Applications - Part I: Transistor DC Design Considerations," IEEE Transactions on Electron Devices, vol. 40, pp. 525-541, 1993.
1992 Papers
J.N. Burghartz, J.D. Cressler, J. Warnock, R.C. McIntosh, K.A. Jenkins, J.Y.-C. Sun, J.H. Comfort, J.M.C. Stork, C.L. Stanis, W. Lee, and D.D. Danner, "Partial-SOI Isolation Structure For Reduced Bipolar Transistor Parasitics," IEEE Electron Device Letters, vol. 13, pp. 424-426, 1992.
J.D. Cressler, J. Warnock, P.J. Coane, K.N. Chiong, M.E. Rothwell, K.A. Jenkins, J.N. Burghartz, E.Petrillo, N. Mazzeo, A. Megdanis, F.J. Hohn, M.G.R. Thomson, J.Y.-C. Sun, and D.D. Tang, "A Scaled 0.25?m Bipolar Technology Using Full E-beam Lithography," IEEE Electron Device Letters, vol. 13, pp. 262-264, 1992.
E.F. Crabbé, J.H. Comfort, W. Lee, J.D. Cressler, B.S. Meyerson, A.C. Megdanis, J.Y.-C. Sun, and J.M.C. Stork, "73 GHz Self-Aligned SiGe-base Bipolar Transistors with Phosphorus-doped Polysilicon Emitters," IEEE Electron Device Letters, vol. 13, pp. 259-261, 1992.
J.N. Burghartz, J. Warnock, J.D. Cressler, C.L. Stanis, R.C. McIntosh, J.Y.-C. Sun, J.H. Comfort, J.M.C. Stork, K.A. Jenkins, E.F. Crabbé, W. Lee, and M. Gilbert, "Novel Bipolar Transistor Isolation Structure Using Combined Selective Epitaxial Growth and Planarization Technique," MicroElectronic Engineering, vol. 16, pp. 531-534, 1992.
1991 Papers
J.N. Burghartz, J.D. Cressler, K.A. Jenkins, J.Y.-C. Sun, J.M.C. Stork, J.H. Comfort, T.A. Brunner, and C.L. Stanis, "Device Design Issues for a High-Performance Bipolar Technology with Si or SiGe Epitaxial Base,"MicroElectronic Engineering, vol.15, pp.11-14, 1991.
J.N. Burghartz, A.C. Megdanis, J.D. Cressler, J.Y.-C. Sun, C.L. Stanis, J.H. Comfort, K.A. Jenkins, and F. Cardone, "Novel In-Situ Doped Polysilicon Emitter Process With Buried Diffusion Source (BDS)," IEEE Electron Device Letters, vol. 12, pp. 679-681, 1991.
J. Warnock, J.D. Cressler, K.A. Jenkins, C. Stanis, J.Y.-C. Sun, D.D. Tang, E. Petrillo, and C.K. Hu, "High-Performance Bipolar Technology for Improved ECL Power-Delay," IEEE Electron Device Letters, vol. 12, pp. 315-317, 1991.
P.F.-Lu, J.D. Warnock, J.D. Cressler, K.A. Jenkins, and K.-Y. Toh, "The Design and Optimization of High-Performance, Double-Poly Self-Aligned p-n-p Technology," IEEE Transactions on Electron Devices, vol. 38, pp. 1410-1418, 1991.
K.A. Jenkins and J.D. Cressler, "Electron-Beam Damage of Self-Aligned Bipolar Transistors and Circuits," IEEE Transactions on Electron Devices, vol. 38, pp. 1450-1458, 1991.
J.D. Cressler, J.H. Comfort, E.F. Crabbé, G.L. Patton, W. Lee, J.Y.-C. Sun, J.M.C. Stork, and B.S. Meyerson, "Sub-30-ps ECL Circuit Operation at Liquid Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar Transistors," IEEE Electron Device Letters, vol. 12, pp. 166-168, 1991.
T.C. Chen, E. Ganin, H. Stork, B. Meyerson, J. D. Cressler, J. Warnock, D. Harame, G. Patton, G.P. Li, C.T. Chuang, and T.H. Ning, "Submicrometer Si and Si-Ge Epitaxial-Base Double-Poly Self-Aligned Bipolar Transistors," IEEE Transactions on Electron Devices, vol. 38, pp. 941-943, 1991.
1986-1990 Papers
J.D. Cressler, "Silicon Bipolar Transistor: A Viable Candidate for High-Speed Applications at Liquid Nitrogen Temperature," Cryogenics, vol. 30, pp. 1036-1047, 1990.
J. Warnock, J.D. Cressler, K.A. Jenkins, T.-C. Chen, J.Y.-C. Sun, and D.D. Tang, "50-GHz Self-Aligned Silicon Bipolar Transistors with Ion-implanted Base Profiles," IEEE Electron Device Letters, vol. 11, pp. 475-478, 1990.
J.D. Cressler, T.C. Chen, J.D. Warnock, D.D. Tang, and E.S. Yang, "Scaling the Silicon Bipolar Transistor for Sub-100pS ECL Circuit Operation at Liquid Nitrogen Temperature," IEEE Transactions on Electron Devices, vol. 37, pp. 680-691, 1990.
J.D. Cressler, D.D. Tang, and E.S. Yang, "Injection-Induced Bandgap Narrowing and Its Effects on the Low-Temperature Operation of Silicon Bipolar Transistors," IEEE Transactions on Electron Devices, vol. 36, pp. 2576-2586, 1989.
D.D. Tang, T.C. Chen, C.T. Chuang, J.D. Cressler, J.D. Warnock, G.P. Li, M.R. Polcari, M.B. Ketchen, and T.H. Ning, "The Design and Electrical Characteristics of Sub-50pS Single-Poly Ion-implanted Bipolar Transistors," IEEE Transactions on Electron Devices, vol. 36, pp. 1073-1710, 1989.
T.C. Chen, K.Y. Toh, J.D. Cressler, J. Warnock, P.-F. Lu, D.D. Tang, G.P. Li, C.T. Chuang, T.H. Ning, "A Submicrometer High-Performance Bipolar Technology," IEEE Electron Device Letters, vol. 10, pp. 364-366, 1989.
J.D. Cressler, D.D. Tang, K.A. Jenkins, G.P. Li, and E.S. Yang, "On the Low-Temperature Static and Dynamic Properties of High-Performance Silicon Bipolar Transistors," IEEE Transactions on Electron Devices, vol. 36, pp. 1489-1502, 1989.
J.D. Cressler, W. Hwang, and T.C. Chen, "On the Temperature Dependence of Majority Carrier Transport in Heavily Arsenic Doped Polycrystalline Silicon Thin Films," Journal of the Electrochemical Society, vol. 136, pp. 794-804, 1989.
J.M.C. Stork, E. Ganin, J.D. Cressler, G.L. Patton, and G.A. Sai-Halasz, "Electrical and Microstructural Investigation of Polysilicon Emitter Contacts for High-Performance Bipolar VLSI," IBM Journal of Research and Development, vol. 36, pp. 617-626, 1987.
C.T. Chuang, G.P. Li, D. Moy, E. Hackbarth, J.D. Cressler,
S.B. Brodsky, and S. Basavaiah, "Sub-400 Picosecond ISL Circuits,"
IEEE Electron Device Letters, vol. 7, pp. 564-567, 1986.