SiGe HBT Related Activities
- SiGe profile optimization issues for RF circuits
- SiGe stability limits
- New device physics phenomena
- RF / microwave / mm-wave understanding/measurement of noise and linearity
- Understanding of device-to-circuit interactions
- Accurate compact modeling
- 2-D/3-D numerical device simulation
- Radiation effects (total dose + SEU)
- Breakdown limits and voltage constraints for RF / microwave circuits
- Avalanche multiplication measurement and modeling
- 1/f noise and its up-conversion to phase noise
- Reliability physics and geometrical scaling issues
- Cryogenic operation
- Safe operating area
- SiGe HBT digital, analog, RF circuit design
Other Activities
- SiC diodes for high-power / high-temperature power systems
- Effects of radiation on SiC devices and the SiO2/SiC system
- Operation of SOI CMOS in extreme environments (radiation and low / high T)
- Strained Si CMOS
Funding Agents (Government)
- NASA
- DTRA
- NSF
- DARPA
- MDA
- DOE
- MURI
Funding Agents (Industry)
- Semiconductor Research Corporation
- IBM
- Samsung
- National Semiconductor
- Texas Instruments
- BAE Systems
- Boeing
- Northrop Grumman
- Jazz Semiconductor
- IHP
- Atmel