Dr. John D. Cressler

Book Chapters

P.S. Chakraborty and J.D. Cressler, “Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors,” in Hot Carrier Degradation in Semiconductor Devices, T. Grasser, Editor, Springer, 2014 (in press).

J.D. Cressler, “Bipolar Transistors,” in Encyclopedia of Electrical and Electronics Engineering, Third Edition, J.G. Webster, Editor, John Wiley and Sons, 2014 (in press).

J.D. Cressler and K. Washio, “Bipolar Transistors,” in Guide to State-of-the-art Electron Devices, J.N. Burghartz, Editor, Wiley-IEEE, pp. 3-20, 2013.

J.D. Cressler, “Primer of Si and SiGe Bipolar Transistors,” in Extreme Environment Electronics, J.D. Cressler and A. Mantooth, Editors, CRC Press, pp. 963-970, 2012.

J.D. Cressler, “Temperature Scales,” in Extreme Environment Electronics, J.D. Cressler and A. Mantooth, Editors, CRC Press, pp. 927-930, 2012.

J.D. Cressler, “Properties of Silicon and Germanium,” in Extreme Environment Electronics, J.D. Cressler and A. Mantooth, Editors, CRC Press, pp. 925-926, 2012.

J.D. Cressler, “SiGe HBT Platforms,” in Extreme Environment Electronics, J.D. Cressler and A. Mantooth, Editors, CRC Press, pp. 197-206, 2012.

J.D. Cressler and K.A. Moen, “The Physics of Temperature and Temperature’s Role in Carrier Transport ,” in Extreme Environment Electronics, J.D. Cressler and A. Mantooth, Editors, CRC Press, pp. 61-69, 2012.

J.D. Cressler, “The Big Picture and Some History of the Field,” in Extreme Environment Electronics, J.D. Cressler and A. Mantooth, Editors, CRC Press, pp. 3-9, 2012.

M. Bellini, S.D. Phillips, R.M. Diestelhorst, P. Cheng, J.D. Cressler, P.W. Marshall, M. Turowski, G. Avenier, A. Chantre, and P. Chevalier, “Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on Thin-Film SOI Technology,” Chapter 4 in Radiation Effects in Semiconductors: Devices, Circuits, and Systems, K. Iniewski, Editor, 2009.

J.D. Cressler, “Bipolar Transistors,” in Encyclopedia of Electrical and Electronics Engineering, Second Edition, J.G. Webster, Editor, John Wiley and Sons, 2007.

J.D. Cressler, “Electronic Applications of SiGe Thin Films,” in Handbook of Thin Film Process Technology, Second Edition, D.A. Glocker and S.I. Shah, Editors, Institute of Physics Publishing, 2006.

J.D. Cressler, “SiGe Technology,” in CRC Handbook on VLSI Technology, Second Edition, Y.-K. Chen, Editor, CRC Press, 2006.

J.D. Cressler, “The Generalized Moll-Ross Relations,” in Silicon Heterostructure Handbook – Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy, J.D. Cressler, Editor, CRC Press, pp. 1181-1186, 2006.

J.D. Cressler, “Properties of Si and Ge,” in Silicon Heterostructure Handbook – Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy, J.D. Cressler, Editor, CRC Press, pp. 1177-1180, 2006.

J.D. Cressler, “Reliability Issues,” in Silicon Heterostructure Handbook – Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy, J.D. Cressler, Editor, CRC Press, pp. 525-538, 2006.

J.D. Cressler, “Radiation Effects,” in Silicon Heterostructure Handbook – Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy, J.D. Cressler, Editor, CRC Press, pp. 511-524, 2006.

J.D. Cressler, “Temperature Effects,” in Silicon Heterostructure Handbook – Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy, J.D. Cressler, Editor, CRC Press, pp. 497-510, 2006.

J.D. Cressler, “pnp SiGe HBTs,” in Silicon Heterostructure Handbook – Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy, J.D. Cressler, Editor, CRC Press, pp. 489-496, 2006.

J.D. Cressler, “Second-Order Effects,” in Silicon Heterostructure Handbook – Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy, J.D. Cressler, Editor, CRC Press, pp. 411-426, 2006.

J.D. Cressler, “Device Physics,” in Silicon Heterostructure Handbook – Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy, J.D. Cressler, Editor, CRC Press, pp. 391-410, 2006.

J.D. Cressler, “A Brief History of the Field,” in Silicon Heterostructure Handbook – Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy, J.D. Cressler, Editor, CRC Press, pp. 15-30, 2006.

J.D. Cressler, “The Big Picture,” in Silicon Heterostructure Handbook – Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy, J.D. Cressler, Editor, CRC Press, pp. 3-14, 2006.

Z. Luo, T. Chen, D. Sheridan, and J.D. Cressler, “4H-SiC Power Switching Diodes for Extreme Environments,” in SiC Power Materials and Devices, Z.C. Feng, Editor, Springer-Verlag, pp. 375-408, 2004.

J.D. Cressler, “Total-Dose and Single-Event Effects in Silicon-Germanium Heterojunction Bipolar Transistors,” in Radiation Effects in Semiconductor Devices, R. Schrimpf and D. Fleetwood, Editors, World Scientific, pp. 205-217, 2003.

J.D. Cressler, “Radiation Effects in SiGe HBT BiCMOS Technology,” in Radiation Effects in Advanced Commercial Technologies: How Device Scaling Has Affected the Selection of Spaceborne Electronics, J. Benedetto, Editor, IEEE NSREC Short Course Notebook, pp. V1-V55, IEEE, 2003.

J.D. Cressler, “SiGe Heterojunction Bipolar Transistors,” in Device and Circuit Cryogenic Operation for Low-Temperature Electronics, F. Balestra and G. Ghibaudo, Editors, Kluwer Academic Publishers, 2001.

J.D. Cressler, “SiGe Technology,” in CRC Handbook on VLSI Technology, K. Shenai, Editor, CRC Press, 2000.

J.D. Cressler, “Electronic Applications of SiGe-based Superlattices,” in Handbook of Thin Film Process Technology, D.A. Glocker and S.I. Shah, Editors, Institute of Physics Publishing, 2000.

J.D. Cressler, “Bipolar Transistors,” in Encyclopedia of Electrical and Electronics Engineering, J.G. Webster, Editor, John Wiley and Sons, 1999.