Short Courses
If you wish to view the following documents please contact me for a user name and password. All documents are in pdf format.
John D. Cressler, "Low Temperature Electronics" 6/08
- Part I:
- Extreme Environment Electronics (EEE)
- Using Si CMOS at Low Temperatures
- Using SiGe HBTs at Low Temperatures
- Building the Infrastructure for EEE
- Summary
John D. Cressler, “Silicon-Germanium Heterojunction Bipolar Transistors: Materials, Technology, Devices, and Circuits,” 11/05.
- Part I:
- Motivation
- SiGe Strained-Layer Epitaxy
- A Little History and Some Trends
- SiGe HBT BiCMOS Technology
- Performance Limits
- Part II:
- Basic SiGe HBT Device Physics
- Some Second-Order Effects
- High Current Density Operation
- CB Field Issues
- Part III:
- Profile Optimization for RF
- Broadband Noise
- 1/f Noise
- Linearity
- LNA Design Example
- Part IV:
- Reliability Physics
- Radiation Effects
- Cryogenic Operation
- pnp SiGe HBTs
- Some Open Issues
John D. Cressler, “Silicon-Germanium Heterojunction Bipolar Transistors,” 11/02.
- Part I:
- Motivation
- SiGe Strained-Layer Epitaxy
- A Little History and Some Trends
- SiGe HBT BiCMOS Technology
- Performance Limits
- Part II:
- Basic SiGe HBT Device Physics
- Some Second-Order Effects
- High Current Density Operation
- CB Field Issues
- Part III:
- Profile Optimization for RF
- Broadband Noise
- 1/f Noise
- Linearty
- Part IV:
- Some Reliability Physics
- Radiation Effects
- pnp SiGe HBT Trade-offs
- Open Issues
John D. Cressler, “Radiation Effects in SiGe HBT BiCMOS,” 7/03.