Journal Papers

2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 - 1986

2019 Papers

A.P. Omprakash, Z.E. Fleetwood, A. Ildefonso, G. Tzintzarov, A.S. Cardoso, J. Babcock, R. Mukhopadhyay, A. Khachatrian, J.H. Warner, D. McMorrow, S.P. Buchner, and J.D. Cressler, "The Effects of High Temperature on the Single Event Transient Response of a High-Voltage (>30V) Complementary SiGe-on-SOI Technology," IEEE Transactions of Nuclear Science, vol. 66, no. 1, pp. 389-396, 2019.

A. Ildefonso, Z.E. Fleetwood, G.N. Tzintzarov, J.M. Hales, M. Frounchi, A. Khachatrian, D. McMorrow, J.H. Warner, J. Harms, A. Erickson, and J.D. Cressler, "Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs," IEEE Transactions of Nuclear Science, vol. 66, no. 1, pp. 359-367, 2019.

P.S. Goley, G.N. Tzintzarov, S. Zeinolabedinzadeh, A. Ildefonso, E.X. Zhang, D.M. Fleetwood, L. Zimmermann, and J.D. Cressler, "An Investigation of Total Ionizing Dose Effects in the 70 GHz Bandwidth Photodiodes of a Novel SiGe Integrated Photonics Platform," IEEE Transactions of Nuclear Science, vol. 66, no. 1, pp. 125-133, 2019.

M.-K. Cho, I. Song, Z.E. Fleetwood, S.P. Buchner, D. McMorrow, P. Paki, and J.D. Cressler, "Best Practices for Using Electrostatic Discharge (ESD) Protection Techniques for Single-Event Transient Mitigation," IEEE Transactions of Nuclear Science, vol. 66, no. 1, pp. 240-247, 2019.

J. Dark, H. Ying, G. Nunn, J.D. Cressler, and D. Davidovic, "Increasing the Signal-to-Noise Ratio of Magnetic Tunnel Junctions by Cryogenic Preamplification," Journal of Applied Physics, vol. 125, no. 16, p. 163902, 2019.

2018 Papers

A.P.G. Prakash,V.N. Hegde, T.M. Pradeep, N. Pushpa, P.K. Bajpai, S.P. Patel, T. Trivedi, and J.D. Cressler, "5 MeV Proton Irradiation Effects on 200 GHz Silicon-Germanium Heterojunction Bipolar Transistors," Journal of Radiation Effects and Defects in Solids, DOI: 10.1080/10420150.2017.1418874, 2018.

Z. Li, B. Qi, X. Zhang, S. Zeinolabedinzadeh, X. Tao, L. Sang, R. Cao, and J.D. Cressler, "A 0.32 THz SiGe Imaging Array with Polarization Diversity," IEEE Transactions on Terahertz Science and Technology, vol. 8, pp. 215-223, 2018.

I. Song, Z.E. Fleetwood, M.-K. Cho, S. Pavlidis, S.P. Buchner, D. McMorrow, P. Paki, M. Kaynak, and J.D. Cressler, "SET-Mitigated PNP-Based RF Switches in a Complementary SiGe BiCMOS Platform," IEEE Transactions on Nuclear Science, vol. 65, pp. 391-398, 2018.

Z.E. Fleetwood, A. Ildefonso, G.N. Tzintzarov, B. Wier, U. Raghunathan, M-K.Cho, I. Song, M.T. Wachter, A. Khachatrian, J. Warner, P. McMarr, H. Hughes, S.P. Buchner, D. McMorrow, P. Paki, A. Joseph, V. Jain, and J. D. Cressler, "SiGe HBT Profiles with Enhanced Inverse-Mode Operation to Mitigate Single-Event Transients," IEEE Transactions on Nuclear Science, vol. 65, pp. 399-406, 2018.

N.E. Lourenco, A. Ildefonso, G.N. Tzintzarov, Z.E. Fleetwood, K. Motoki, P. Paki, M. Kaynak, and J.D. Cressler, "Single-Event Upset Mitigation in a Complementary SiGe HBT BiCMOS Technology," IEEE Transactions on Nuclear Science, vol. 65, pp. 231-238, 2018.

A. Ildefonso, C.T .Coen, Z.E. Fleetwood, G.N. Tzintzarov, M.T. Wachter, A. Khachatrian, D. McMorrow, S.P. Buchner, J.H. Warner, P. Paki, and J.D. Cressler, "Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits," IEEE Transactions on Nuclear Science, vol. 65, pp. 239-248, 2018.

M.-K. Cho, I. Song, S. Pavlidis, Z.E. Fleetwood, S.P. Buchner, D. McMorrow, P. Paki, and J.D. Cressler, "An Electrostatic Discharge (ESD) Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology," IEEE Transactions on Nuclear Science, vol. 65, pp. 426-431, 2018.

B.R. Wier, U.S. Raghunathan, Z.E. Fleetwood, M.A. Oakley, A.J. Joseph, V. Jain, and J.D. Cressler, "Limiting Effects on the Design of Vertical Superjunction Collectors in SiGe HBTs," IEEE Transactions on Electron Devices, vol. 65, pp. 793-797, 2018.

P.S. Goley, Z.E. Fleetwood, and J.D. Cressler, "Fundamental Limitations on Integrated Silicon Photonic Waveguides Operating in a Heavy Ion Environment," IEEE Transactions on Nuclear Science, vol. 65, no. 1, pp. 141-148, 2018.

I. Ju, C. Cheon, and J.D. Cressler, "A Compact, Highly Efficient High Power Ka-band SiGe HBT Cascode Frequency Doubler With Four-Way Input Transformer Balun," IEEE Transactions on Microwave Theory and Techniques, vol. 66, pp. 2879-2887, 2018.

U.S. Raghunathan, R.P. Martinez, B.R. Wier, A.P. Omprakash, H. Ying, T.G. Bantu, H. Yasuda, P. Menz, and J.D. Cressler, "Hot-Carrier-Damage-Induced Current Gain Enhancement (CGE) Effects in SiGe HBTs," IEEE Transactions on Electron Devices, vol. 65, pp. 2430-2438, 2018.

M.-K. Cho, I. Song, Z.E. Fleetwood, and J.D. Cressler, "A SiGe-BiCMOS Wideband Active Bidirectional Digital Step Attenuator with Bandwidth Tuning and Equalization," IEEE Transactions on Microwave Theory and Techniques, vol. 66, pp. 3866-3876, 2018.

Y. Gong, M.-K. Cho, I. Song, and J.D. Cressler, "A 28-GHz Switchless, SiGe Bi-Directional Amplifier Using Neutralized Common-Emitter Differential Pair," IEEE Microwave and Wireless Components Letters, vol. 28, pp. 717-719, 2018.

J.M. Hales, A. Khachatrian, S. Buchner, N.J.-H. Roche, J. Warner, Z.E. Fleetwood, A. Ildefonso, J.D. Cressler, V. Ferlet-Cavrois, and D. McMorrow, "Experimental Validation of an Equivalent LET Approach for Correlating Heavy-Ion and Pulsed-Laser Charge Deposition," IEEE Transactions on Nuclear Science, vol. 65, pp. 1724-1733, 2018.

I. Song, M.-K. Cho, and J.D. Cressler, "Design and Analysis of a Low-Loss, Wideband Digital Step Attenuator with Minimized Amplitude and Phase Variations," IEEE Journal of Solid-State Circuits, vol. 53, pp. 2202-2213, 2018.

H. Ying, J. Dark, A.P. Omprakash, B.R. Wier, L. Ge, U. Raghunathan, N.E. Lourenco, Z.E. Fleetwood, M. Mourigal, D. Davidovic, and J.D. Cressler, "Collector Transport in SiGe HBTs Operating at Cryogenic Temperatures," IEEE Transactions on Electron Devices, vol. 65, pp. 3697-3703, 2018.

I. Ju and J.D. Cressler, "A Highly Efficient X-band Inverse Class-F SiGe HBT Cascode Power Amplifier With Harmonic-tuned Wilkinson Power Combiner," IEEE Transactions on Circuit and System II, Express Brief, vol. 65, pp. 1609-1613, 2018.

M. Frounchi, S.G. Rao, and J.D. Cressler, "A Ka-Band SiGe Phase-Controlled Gilbert-cell Based Frequency Doubler with 26.2% PAE," IEEE Microwave and Wireless Components Letters, vol. 28, pp. 1122-1124, 2018.

2017 Papers

U.S. Raghunathan, H. Ying, B.R. Wier, A.P. Omprakash, P.S. Chakraborty, T.G. Bantu, H. Yasuda, P. Menz, and J.D. Cressler, “Physical Differences in Hot Carrier Degradation of Oxide Interfaces in Complementary (NPN + PNP) SiGe HBTs ,” IEEE Transactions on Electron Devices, vol. 64, pp. 37-44, 2017.

H. Ying, J. Dark, L. Ge, N. Lourenco, A. Omprakash, D. Davidovic, M. Mourigal, and J.D. Cressler, “Operation of SiGe HBTs Down to 70 mK Temperatures,” IEEE Electron Device Letters, vol. 38, pp. 12-15, 2017.

N.E. Lourenco, Z.E. Fleetwood, A. Ildefonso, M.T. Wachter, N.J.-H. Roche, A. Khachatrian, D. McMorrow, S.P. Buchner, J.H. Warner, H. Itsuji, D. Kobayashi, K. Hirose, P. Paki, and J.D. Cressler, “The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 64, pp. 406-414, 2017.

A. Ildefonso, N.E. Lourenco, Z.E. Fleetwood, M.T. Wachter, A.S. Cardoso, N.J.-H. Roche, A. Khachatrian, D. McMorrow, S.P. Buchner, J.H. Warner, P. Paki, M. Kaynak, B. Tillack, D. Knoll, and J.D. Cressler, “Single-Event Transient Response of Comparator Pre-amplifiers in a Complementary SiGe Technology,” IEEE Transactions on Nuclear Science, vol. 64, pp. 89-96, 2017.

A.P. Omprakash, Z.E. Fleetwood, U. Raghunathan, A.S Cardoso, J. Babcock, R. Mukhopadhyay, E. Zhang, and J.D. Cressler, “An Investigation of Total Ionizing Dose Effects on a High voltage (48V) Complimentary SiGe on SOI Technology,” IEEE Transactions on Nuclear Science, vol. 64, pp. 277-284, 2017.

I. Song, N.E. Lourenco, S. Jung, M.-K. Cho, N.J.-H. Roche, A. Khachatrian, D. McMorrow, S.P. Buchner, J.H. Warner, P. Paki, and J.D. Cressler, “The Use of Inverse-Mode SiGe HBTs as Active Gain Stages in Low-Noise Amplifiers for the Mitigation of Single-Event Transients,” IEEE Transactions on Nuclear Science, vol. 64, pp. 359-366, 2017.

S. Zeinolabedinzadeh, A.C. Ulusoy, F. Inanlou, H. Ying, Y. Gong, R.L. Schmid, Z.E. Fleetwood, N.J.-H. Roche, A. Khachatrian, D. McMorrow, S.P. Buchner, J.H. Warner, P. Paki, and J.D. Cressler, “Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology,” IEEE Transactions on Nuclear Science, vol. 64, pp. 536-543, 2017.

Z.E. Fleetwood, N.E. Lourenco, A. Ildefonso, J.H. Warner, M.T. Wachter, J. Hales, N.J.-H. Roche, A. Khachatrian, D. McMorrow, S.P. Buchner, P. Paki, and J.D. Cressler, “Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 64, pp. 398-405, 2017.

S. Zeinolabedinzadeh, H. Ying, Z.E. Fleetwood, N.J.-H. Roche, A. Khachatrian, D. McMorrow, S.P. Buchner, J.H. Warner, P. Paki, and J.D. Cressler, “Single-Event Effects in High Frequency Linear Amplifiers: Experiment and Analysis,” IEEE Transactions on Nuclear Science, vol. 64, pp. 125-132, 2017.

S. Zeinolabedinzadeh, A.C. Ulusoy, M.A. Oakley, and J.D. Cressler, “A 0.3 - 15.0 GHz SiGe LNA with >1.0 THz Gain-Bandwidth Product,” IEEE Microwave and Wireless Components Letters, vol. 27, pp. 380-382, 2017.

I. Song, M.-K. Cho, M.A. Oakley, S.P. Buchner, D. McMorrow, P. Paki, and J.D. Cressler, “On the Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients,” IEEE Transactions on Nuclear Science, vol. 64, pp. 1142-1150, 2017.

D. Davidovic, H. Ying, J. Dark, B.R. Wier, N.E. Lourenco, L. Ge, A.P. Omprakash, M. Mourigal, and J.D. Cressler, ”Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at mK Temperatures,” Physical Review Applied, vol. 8, pp. 024015-1-024015-15, 2017.

A.P. Omprakash, H. Dao, U.S. Raghunathan, H. Ying, J.A. Babcock, R. Mukhopadhyay, and J.D. Cressler, ”An Investigation of High Temperature (to 300C) Safe-Operating-Area in a High-Voltage Complementary SiGe on SOI Technology,” IEEE Transactions on Electron Devices, vol. 64, pp. 3748-3755, 2017.

A. Ildefonso, I. Song, G.N. Tzintzarov, Z.E. Fleetwood, N.E. Lourenco, M.T. Wachter, and J.D. Cressler, ”Modeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver,” IEEE Transactions on Nuclear Science, vol. 64, pp. 2079-2088, 2017.

2016 Papers

I. Song, S. Jung, N.E. Lourenco, Z.E. Fleetwood, M.-K. Cho, N.J.-H. Roche, A. Khachatrian, J.H. Warner, S.P. Buchner, D. McMorrow, P. Paki, and J.D. Cressler, “An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers,” IEEE Transactions on Nuclear Science, vol. 63, pp. 1099-1108, 2016.

M.-K. Cho, I. Song, J.-G. Kim, and J.D. Cressler, “An Active SiGe Bi-directional DPDT Switch with Multi-Octave Bandwidth,” IEEE Microwave and Wireless Components Letters, vol. 26, pp. 279-281, 2016.

N.E. Lourenco, S. Zeinolabedinzadeh, Z.E. Fleetwood, C.T. Coen, I. Song, S. Jung, F. Inanlou, N.J.-H. Roche, A. Khachatrian, D. McMorrow, S.P. Buchner, J.H. Warner, P. Paki, and J.D. Cressler, “An Investigation of Single-Event Effect Modeling Techniques for a SiGe-based RF Low-Noise Amplifier,” IEEE Transactions on Nuclear Science, vol. 63, pp. 273-280, 2016.

B. Limyanskya, R. Reesea, J.D. Cressler, A. N. Otte, I. Taboada, and C. Ulusoy, “FIPSER: A Low Cost and High Performance Readout Concept for Fast Signals,” Nuclear Instruments and Methods in Physics Research, A, pp. 143-152, 2016 (DOI: 10.1016/j.nima.2016.09.011).

C.T. Coen, A.Ç. Ulusoy, P. Song, A. Ildefonso, N. Ehsan, M. Kaynak, B. Tillack, and J.D. Cressler, “Design and On-Wafer Characterization of G-band SiGe HBT Low-Noise Amplifiers,” IEEE Transactions on Microwave theory and Techniques, vol. 26, no. 11, pp. 3631-3642, 2016.

M.-K. Cho, I. Song, and J.D. Cressler, “A Compact, Active SiGe Power Divider with Multi-Octave Bandwidth,” IEEE Microwave and Wireless Components Letters, vol. 26, pp. 945-947, 2016.

I. Song, M.-K. Cho, J.-G. Kim, and J.D. Cressler, “A SiGe-BiCMOS Wideband (2-22 GHz) Active Power Divider/Combiner Circuit Supporting Bi-Directional Operation,” IEEE Transactions on Microwave Theory and Techniques, vol. 64, pp. 4676-4684, 2016.

I. Ju, M.-K. Cho, I. Song, and J.D. Cressler, “A Compact, Wideband Lumped-Element Wilkinson Power Divider/Combiner Using Symmetric Inductors with Embedded Capacitors,” IEEE Microwave and Wireless Components Letters, vol. 26, pp. 945-947, 2016.

I. Song, A.Ç. Ulusoy, M.A. Oakley, I. Ju, M.-K. Cho and J.D. Cressler, “Inverse class-F X-band SiGe HBT power amplifier with 44% PAE and 24.5 dBm peak output power,” Microwave and Optical Technology Letters, vol. 58, pp. 2868-2871, 2016.

B.R. Wier, J.D. Cressler, K. Green, J. Kim, and D. Zweidinger, “A Physics-Based Circuit Aging Model for Mixed-Mode Degradation in SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 63, pp. 2987-2993, 2016.

2015 Papers

A.Ç. Ulusoy, P. Song, W.T. Khan, M. Kaynak, B. Tillack, J. Papapolymerou, and J.D. Cressler, “A D-Band SiGe Low-Noise Amplifier Utilizing a Gain-Boosting Technique,” IEEE Microwave and Wireless Components Letters, vol. 25, pp. 61-63, 2015.

G. Niu, R. Ma, L. Luo, and J.D. Cressler, “Wide Temperature Range SiGe HBT Noise Parameter Modeling and LNA Design for Extreme Environment Electronics,” International Journal of Numerical Modeling, paper DOI 10.1002/jmn, pp. 1-10, 2015.

A.S. Cardoso, A.P. Omprakash, P.S. Chakraborty, N. Karaulac, D.M. Fleischhauer, A.I. Rosa, T.G. Bantu, M.A. Oakley, N.E. Lourenco, and J.D. Cressler, “On the Cryogenic RF Linearity of SiGe HBTs in a 4th-Generation, 90 nm SiGe BiCMOS Technology,” IEEE Transactions on Electron Devices, pp. 1-10, 2015.

M.A. Oakley, U.S. Raghunathan, B.R. Wier, P.S. Chakraborty, and J.D. Cressler, “Large-Signal Reliability Analysis of SiGe HBT Cascode Driver Amplifiers,” IEEE Transactions on Electron Devices, vol. 62, no. 5, pp. 1383-1389, 2015.

R.L. Schmid, A.Ç. Ulusoy, S. Zeinolabedinzadeh, and J.D. Cressler, “A Comparison of the Degradation in RF Performance Due to Device Interconnects in Advanced SiGe HBT and CMOS Technologies,” IEEE Transactions on Electron Devices, vol. 62, pp. 1803-1801, 2015.

W.T. Khan, A.Ç. Ulusoy, G. Dufour, M. Kaynak, B. Tillack, J.D. Cressler, and J. Papapolymerou, “A D-Band Micromachined End-Fire Antenna in 30-nm SiGe BiCMOS Technology,” IEEE Transactions on Antennas and Propagation, vol. 63, pp. 2449-2459, 2015.

U.S. Raghunathan, P.S. Chakraborty, T. Gibremariam, B. Wier, H. Yasuda, P. Menz, and J.D. Cressler, “Bias and Temperature Dependent Accumulated Stress Modeling of Mixed-Mode Damage in SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 62, pp. 2084-2091, 2015.

B.R. Wier, U.S. Raghunathan, P.S. Chakraborty, H. Yasuda, P. Menz, and J.D. Cressler, “A Comparison of Field and Current Driven Hot-Carrier Reliability in NPN SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 62, pp. 2244-2250, 2015.

N.H. Vinayakprasanna, K.C. Praveen, N. Pushpa, J.D. Cressler, and A.P.G. Prakash, “A comparison of 100 MeV oxygen ion and 60Co gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors,” Indian Journal of Physics, vol. 89, pp. 789-796, 2015.

I. Song, M.-K. Cho, S. Jung, I. Ju, and J.D. Cressler, “Advantages of Utilizing Through-Silicon-Vias in SiGe HBT Low-Noise Amplifier Design,”Microwave and Optical Technology Letters, vol. 57, pp. 2703-2706, 2015.

P. Song, M.A. Oakley, A.C. Ulusoy, M. Kaynak, B. Tillack, G.A. Sadowy, and J.D. Cressler, “A Class-E Tuned W-band SiGe Power Amplifier with 40.4% Power-added Efficiency at 93 GHz,”IEEE Microwave and Wireless Components Letters, vol. 25, no.10, pp. 663-665, 2015.

S. Jung, N.E. Lourenco, I. Song, N.J.-H. Roche, D. McMorrow, S.P. Buchner, J.S. Melinger, J.H. Warner, P. Paki-Amouzou, and J.D. Cressler, “The Role of Negative Feedback Effects in Single-Event Transients in SiGe HBT Analog Circuits,”IEEE Transactions on Nuclear Science, vol. 62, pp. 2599-2605, 2015.

Z.E. Fleetwood, N.E. Lourenco, A. Ildefonso, T.D. England, I. Song, R. Schmid, A. Cardoso, S. Jung, N. Roche, A. Khachatrian, S. Buchner, D. McMorrow, J. Warner, P. Paki, and J.D. Cressler, “An Investigation of the SET Response of Devices and Differential Pairs in a 32-nm SOI CMOS Technology,”IEEE Transactions on Nuclear Science, vol. 62, pp. 2643-2649, 2015.

S. Zeinolabedinzadeh, I. Song, N.E. Lourenco, A.S. Cardoso, N.J.-H. Roche, A. Khachatrian, D. McMorrow, S.P. Buchner, J.H. Warner, P. Paki, and J.D. Cressler, “Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology,”IEEE Transactions on Nuclear Science, vol. 62, pp. 2657-2665, 2015.

I. Song, S. Jung, N.E. Lourenco, Z.E. Fleetwood, M.-K. Cho, N.J.-H. Roche, A. Khachatrian, J.H. Warner, S.P. Buchner, D. McMorrow, P. Paki, and J.D. Cressler, “Optimization of SiGe HBT RF Switches for Single-Event Transient Mitigation,”IEEE Transactions on Nuclear Science, vol. 62, pp. 2657-2665, 2015.

2014 Papers

P.S. Chakraborty, A.S. Cardoso, B.R. Wier, A.P. Omprakash, J.D. Cressler, M. Kaynak, H. Rücker, and B. Tillack, “130 nm, 0.8 THz fmax, 1.6 V BVCEO SiGe HBTs Operating at 4.3 K,” IEEE Electron Device Letters, vol. 35, pp. 151-153, 2014.

R.L. Schmid, A.Ç. Ulusoy, P. Song, and J.D. Cressler, “A 94 GHz, 1.4 dB Insertion Loss Single-Pole Double-Throw Switch Using Reverse-Saturated SiGe HBTs,” IEEE Microwave and Wireless Components Letters, vol. 24, pp. 56-58, 2014.

A.S. Cardoso, P.S. Chakraborty, T.D. England, N.E. Lourenco, D.C. Howard, P. Saha, D. McMorrow, J.H. Warner, S.P. Buchner, P. Paki-Amouzou, T.K. Thrivikraman, and J.D. Cressler, “Evaluating the Effects of Single Event Transients in FET-based Single-Pole Double-Throw RF Switches,” IEEE Transactions on Nuclear Science, vol. 61, pp. 756-765, 2014.

A.Ç. Ulusoy, P. Song, R.L. Schmid, W.T. Kahn, M. Kaynak, B. Tillack, J. Papapolymerou, and J.D. Cressler “A Low-Loss and High Isolation D-band SPDT Switch Utilizing Deep-Saturated SiGe HBTs,” IEEE Microwave and Wireless Components Letters, vol. 24, pp. 400-402, 2014.

T.D. England, C. Chatterjee, N. Lourenco, R.M. Diestelhorst, S. Finn, S.D. Phillips, E.W. Kenyon, L. Najafizadeh, and J.D. Cressler, “Cold-capable, Radiation-hardened SiGe BiCMOS Wireline Transceivers,”IEEE Aerospace and Electronic Systems Magazine, vol. 29, pp. 32-41, 2014.

Z.E. Fleetwood, E.W. Kenyon, N.E. Lourenco, S. Jain, E.X. Zhang, T.D. England, and J.D. Cressler, R.D. Schrimpf, and D.M. Fleetwood, “Advanced SiGe BiCMOS Technology Platform for Multi-Mrad TID-hard Electronic Systems,” IEEE Transactions on Device and Materials Reliability, vol. 14, pp. 844-848, 2014.

D.C. Howard, P.K. Saha, S. Shankar, T.D. England, A. Cardoso, R.M. Diestelhorst, and J.D. Cressler, “A SiGe 8-18 GHz Receiver with Built-in-Testing Capability for Self-Healing Applications,” IEEE Transactions on Microwave Theory and Techniques, vol. 62, pp. 2370-2380, 2014.

R.L. Schmid, P. Song, C.T. Coen, A.Ç. Ulusoy, and J.D. Cressler, “On the Analysis and Design of Low-Loss, Single-Pole, Double-Throw W-Band Switches Utilizing Saturated SiGe HBTs,” IEEE Transactions on Microwave Theory and Techniques, vol. 62, no. 11, pp. 2755-2767, 2014.

F. Inanlou, C. T. Coen, J. D. Cressler, “A 1.0 V, 10–22 GHz, 4 mW LNA Utilizing Weakly Saturated SiGe HBTs for Single-chip, Low-power, Remote Sensing Applications,” IEEE Microwave and Wireless Components Letters, vol. 24, no. 12, pp. 890-892, 2014.

D.C. Howard, T.D. England, A.S. Cardoso, P.K. Saha, S. Shankar, R.M. Diestelhorst, Z.E. Fleetwood, N.E. Lourenco, E.X. Zhang, C.X. Zhang, P. Paki-Amouzou, and J.D. Cressler, “Mitigation of Total Dose Performance Degradation in an 8-18 GHz SiGe Reconfigurable RF Receiver,” IEEE Transactions on Nuclear Science, vol. 61, pp. 3226-3235, 2014.

I. Song, S. Jung, N.E. Lourenco, Z.E. Fleetwood, S. Zeinolabedinzadeh, T.B. Gebremariam, N.J.-H. Roche, A. Khanchatrian, D. McMorrow, S.P. Buchner, J.S. Melinger, J.H. Warner, P. Paki-Amouzou, and J.D. Cressler, “Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 61, pp. 3218-3225, 2014.

N.E. Lourenco, Z.E. Fleetwood, P.S. Chakraborty, N.J.-H. Roche, A. Khachatrian, D. McMorrow, S.P. Buchner, J.S. Melinger, J.H. Warner, P. Paki-Amouzou, M. Kaynak, B. Tillack, and J.D. Cressler, “On the Transient Response of a Complementary (npn + pnp) SiGe HBT BiCMOS Technology,” IEEE Transactions on Nuclear Science, vol. 61, pp. 3146-3153, 2014.

F. Inanlou, N. Lourenco, Z. Fleetwood, I. Song, D. Howard, S. Zeinolabedinzadeh, A. Cardoso, E. Zhang, P. Paki-Amouzou, and J.D. Cressler, “Impact of Total Ionizing Dose on a 4th Generation, 90 nm SiGe HBT Gaussian Pulse Generator,” IEEE Transactions on Nuclear Science, vol. 61, pp. 3050-3054, 2014.

Z.E. Fleetwood, A.S. Cardoso, I. Song, E. Wilcox, N.E. Lourenco, S. Jung, S.D. Philips, R. Arora, P. Paki-Amouzou, and J.D. Cressler, “Evaluation of Enhanced Low Dose Rate Sensitivity in Fourth-Generation SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 61, pp. 2915-2922, 2014.

A.S. Cardoso, P.S. Chakraborty, N.E. Lourenco, D.M. Fleischhauer, Z.E. Fleetwood, T.D. England, S. Jung, L. Najafizadeh, N. Roche, J.H. Warner, D. McMorrow, S.P. Buchner, E.X. Zhang, C.X. Zhang, M. McCurdy, R.A. Reed, D.M. Fleetwood, P. Paki-Amouzou, and J.D. Cressler, “Single Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in 90 nm SiGe BiCMOS Technology,” IEEE Transactions on Nuclear Science, vol. 61, pp. 3210-3217, 2014.

S. Jung N.E. Lourenco, I. Song, M.A. Oakley, T.D. England, R. Arora, A. Cardoso, N.J.-H. Roche, D. McMorrow, S.P. Buchner, J.S. Melinger, J.H. Warne, P. Paki-Amouzou, J.A. Babcock, and J.D. Cressler, “An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits,” IEEE Transactions on Nuclear Science, vol. 61, pp. 3193-3200, 2014.

R. Arora, E.X. Zhang, K.A. Moen, N. Lourenco, J.D. Cressler, D.M. Fleetwood, R.D. Schrimpf, A.K. Sutton, G. Freeman, and B. Greene, “Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability,” IEEE Transactions on Nuclear Science, vol. 61, pp. 1426-1432, 2014.

2013 Papers

P. Chakraborty, K.A. Moen, and J.D. Cressler, “An Investigation on the Optimization and Scaling of Complementary SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 60, pp. 34-41, 2013.

R. Arora and J.D. Cressler, “Operating Voltage Constraints in 45-nm SOI nMOSFETs and Cascode Cores,” IEEE Transactions on Electron Devices, vol. 60, pp. 132-139, 2013.

T. Thrivikraman, C.E. Patterson, C. Coen, A.M. Yepes, T. Heath, B. Wilson, J. Papapolymerou, and J.D. Cressler, “Integrated, Digitally-Controlled, 64 Element SiGe on Multi-layer Organic X-band Phased-Array Receiver Antenna for Snow Measurements,” IEEE Aerospace and Electronic Systems Magazine, pp. 26-39, 2013.

Z. Guo, R. Dong, P.S. Chakraborty, N. Lourenco, J. Palmer, Y. Hu, M. Ruan, J. Hankinson, J.D. Cressler, C. Berger, and W.A. de Heer, “An Epitaxial Graphene FET with High Maximum Oscillation Frequency,” Nano Letters, vol. 13, pp. 942-947, 2013.

F. Inanlou, E.W. Kenyon, and J.D. Cressler, “An Investigation of Total Ionizing Dose Damage on a Pulse Generator Intended for Space-Based Impulse Radio UWB Transceivers,” IEEE Transaction on Nuclear Science, vol. 60, pp. 2605-2610, 2013.

A.S. Cardoso, P.S. Chakraborty, N.E. Lourenco, N. Karaulac, P. Song, T.D. England, E. W. Kenyon, and J.D. Cressler, “Total Ionization Dose Response of Triple-Well FET based Wideband High-Isolation RF Switch in a 130 nm SiGe BiCMOS Technology,” IEEE Transaction on Nuclear Science, vol. 60, pp. 2567-2573, 2013.

N.E. Lourenco, S.D. Phillips, T.D. England, A. Cardoso, K.A. Moen, D. McMorrow, J.H. Warner, S.P. Buchner, P. Paki-Amouzou, J. Pekarik, D. Harame, A. Raman, M. Turowski, and J.D. Cressler, “An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in 4th Generation 90nm SiGe BiCMOS,” IEEE Transaction on Nuclear Science, vol. 60, pp. 4175-4183, 2013.

T.D. England, R. Arora, Z. Fleetwood, N. Lourenco, K.A. Moen, A. Cardoso, D. McMorrow, J.H. Warner, S.P. Buchner, P. Paki-Amouzou, A.K. Sutton, G. Freeman, and J.D. Cressler, “An Investigation of Single Event Transient Response in 45 nm and 32 nm RF-CMOS on SOI Devices and Circuits,” IEEE Transaction on Nuclear Science, vol. 60, pp. 4405-4411, 2013.

2012 Papers

N. Pushpa, K.C. Praveen, A.P. Gnana Prakash, P.S. Naik, J.D. Cressler, S.K. Gupta, and D. Revannasiddaiah, "Reliability Studies on NPN RF Power Transistors Under Swift Heavy Ion Irradiation," Nuclear Instruments and Methods in Physics Research B, vol. 273, pp. 36-39, 2012.

K.C. Praveen, N. Pushpa, P.S. Naik, J.D. Cressler, A. Tripathi, and A.P. Gnana Prakash, "Application of a Pelletron Accelerator to Study Total Dose Radiation Effects on 50 GHz SiGe HBTs," Nuclear Instruments and Methods in Physics Research B, vol. 273, pp. 43-46, 2012.

A. Madan, M.J. McPartlin, C. Masse, W. Vaillancourt, and J.D. Cressler, "A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-body LNA in 180 nm SOI CMOS Technology," IEEE Microwave and Wireless Components Letters, vol. 22, pp. 200-202, 2012.

R.M. Diestelhorst, T. England, R. Berger, R. Garbos, C. Ulaganathan, B. Blalock, K. Cornett, A. Mantooth, X. Geng, F. Dai, W. Johnson, J. Holmes, M. Alles, R. Reed, P. McCluskey, M. Mojaradi, L. Peltz, R. Frampton, C. Eckert and J.D. Cressler, "A New Approach to Designing Electronic Systems for Operation in Extreme Environments: Part I – the SiGe Remote Sensor Interface," IEEE Aerospace and Electronic Systems Magazine, vol. 27, no. 6, pp. 25-34, 2012.

T. England, R.M. Diestelhorst, R. Berger, R. Garbos, C. Ulaganathan, B. Blalock, K. Cornett, A. Mantooth, X. Geng, F. Dai, W. Johnson, J. Holmes, M. Alles, R. Reed, P. McCluskey, M. Mojaradi, L. Peltz, R. Frampton, C. Eckert and J.D. Cressler, “A New Approach to Designing Electronic Systems for Operation in Extreme Environments: Part II – the SiGe Remote Electronics Unit,” IEEE Aerospace and Electronic Systems Magazine, vol. 27, no. 7, pp. 29-41, 2012.

S. Seth, P. Song, J.D. Cressler, J.A. Babcock, and G. Cestra, “On the RF Power Handling Capabilities of Forward- and Inverse-Mode SiGe HBT RF Switches Fabricated on Thick-Film SOI,” IEEE Transactions on Electron Devices, vol. 59, pp. 2531-2533, 2012.

P.K. Saha, D. Howard, S. Shankar, R. Diestelhorst, T. England, and J.D. Cressler, “An Adaptive, Wideband SiGe Image Reject Mixer for a Self-healing Receiver,” IEEE Journal of Solid-State Circuits, vol. 47, pp. 1998-2006, 2012.

K.A. Moen, P.S. Chakraborty, U. Raghunathan, J.D. Cressler, and H. Yasuda, “Predictive Physics-Based TCAD Modeling of the Mixed-Mode Degradation Mechanism in SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 59, pp. 2895-2901, 2012.

K.A. Moen, S.D. Phillips, E.W. Kenyon, and J.D. Cressler, “Establishing Best-Practice Modeling Approaches for Understanding Single Event Transients in Gb/sec SiGe Digital Logic,” IEEE Transactions on Nuclear Science, vol. 59, pp. 958-964, 2012.

C.-H.J. Poh, S. Seth, R.L. Schmid, J.D. Cressler, J. Papapolymerou, “A Low-Power and Low-Voltage X-band SiGe HBT Low-Noise Amplifier," IET Microwave and Antenna Propagation, vol. 6, pp. 1351-1331, 2012.

C.H.J. Poh, C.E. Patterson, S.K. Bhattacharya, S.D. Philips, N.E. Lourenco, J.D. Cressler, and J. Papapolymerou, “Packaging Effects of Multiple X-band SiGe LNAs Embedded in an Organic LCP Substrate,” IEEE Trans. on Components, Packaging and Manufacturing Technology, vol. 2, pp. 1351-1360, 2012.

D.C. Howard, P. Saha, S. Shankar, R. Deistelhorst, T. England, E. Kenyon, and J.D. Cressler, “An 8-16 GHz SiGe Low Noise Amplifier with Self-Healing Capability for Mitigation of Radiation-Induced Performance Loss,” IEEE Transactions on Nuclear Science, vol. 59, pp. 2837-2846, 2012.

S. Phillips, K.A. Moen, N. Lourenco, and J.D. Cressler, “Single Event Response of the SiGe HBT Operating in Inverse Mode,” IEEE Transactions on Nuclear Science, vol. 59, pp. 2682-2690, 2012.

A. Goyal, M. Swaminathan, A. Chatterjee, D. Howard, and J.D. Cressler, “A Self-Healing Methodology for RF Amplifier Circuits Based on Oscillation Principles,” IEEE Transactions on Very Large Scale Integration Systems, vol. 20, pp. 1835-1848, 2012.

2011 Papers

S. Seth, L. Najafizadeh, and J.D. Cressler, "On The RF Properties of Weakly-Saturated SiGe HBTs and Their Potential Use in Ultralow-Voltage Circuits," IEEE Electron Device Letters, vol. 32, pp. 3-5, 2011.

D.B. Thomas, L. Najafizadeh, J.D. Cressler, K.A. Moen, and N. Lourenco, "Optimization of SiGe Bandgap-Based Circuits for up to 300°C Operation," Solid-State Electronics, vol. 56, pp. 47-55, 2011.

C.E. Patterson, T.K. Thrivikraman, A.M. Yepes, S.M. Begley, S.K. Bhattacharya, J.D. Cressler, and J. Papapolymerou, "A Lightweight, Organic X-Band Phased Array with Integrated SiGe Amplifiers and Phase Shifters," IEEE Transactions on Antennas and Propagation, vol. 59, pp. 100-109, 2011.

K.C. Praveen, N. Pushpa, J.D. Cressler, and A.P.G. Prakash, "Analysis of High Energy Ion, Proton, and Co-60 Gamma Radiation Induced Damage in Advanced 200 GHz SiGe HBTs," Journal of Nanoelectronic Physics, vol. 3, pp. 348-357, 2011.

K.A. Moen, L. Najafizadeh, J. Seungwoo, A. Raman, M. Turowski, and J.D. Cressler, "Accurate Modeling of Single Event Transients in a SiGe Voltage Reference Circuit," IEEE Transactions on Nuclear Science, vol. 58, pp. 877-884, 2011.

A.P.G. Prakash and J.D. Cressler, "The Effects of 63 MeV Hydrogen Ion Irradiation on 65 GHz UHV/CVD SiGe HBT BiCMOS Technology," Journal of Radiation Effects and Defects in Solids, vol. 66, pp. 703-709, 2011.

K.C. Praveen, N. Pushpa, A. Tripati, D. Revannasiddaiah1, J.D. Cressler, and A.P.G. Prakash, "50 MeV Li3+ Ion Irradiation Effects on Advanced 200 GHz SiGe HBTs, Radiation Effects and Defects in Solids, vol. 66, pp. 710-717, 2011.

J. Yuan and J.D. Cressler, "Design and Optimization of Superjunction Collectors for Use in High-Speed SiGe HBTs," IEEE Transactions on Electron Devices, vol. 58, pp. 1655-1662, 2011.

A. Madan, M. McPartlin, Z.-F. Zhou, C.-W.P. Huang, C. Masse, W. Vaillancourt, and J.D. Cressler," Fully-Integrated Switch-LNA Front-end IC Design in CMOS: A Systematic Approach for WLAN," IEEE Journal of Solid-State Circuits, vol. 46, pp. 2613-2622, 2011.

R. Arora, E.X. Zhang, K.A. Moen, J.D. Cressler, D.M. Fleetwood, R.D. Schrimpf, A.K. Sutton, H.M. Nayfeh, and G. Freeman, "Layout-Induced Trade-Offs Between RF Performance and Total-Dose Tolerance in 45 nm RF-CMOS," IEEE Transactions on Nuclear Science, vol. 58, pp. 2830-2837, 2011.

S.J. Horst, S.D. Phillips, J.D. Cressler, K. Kruckmeyer, R. Eddy, and B. Zhang, "A Study of Total Dose Mitigation Approaches for Charge Pumps in Phase-Locked Loop Applications," IEEE Transactions on Nuclear Science, vol. 58, pp. 3038-3045, 2011.

T.G. Neogi, G. Niu, D. Connelly, J.D. Cressler, Z.R. Huang, and J.F. McDonald, "Design of a 250 Gbit/s SiGe HBT Electro-Optic Modulator," IEEE Journal of Photonics, vol. 3, pp. 897-914, 2011.

P. Cheng, S. Seth, J.D. Cressler, G. Cestra, T. Krakowski , J.A. Babcock, and A. Buchholz, "An Investigation of DC and RF Safe-Operating-Area of npn + pnp SiGe HBTs on SOI," IEEE Transactions on Electron Devices, vol. 58, pp. 2573-2581, 2011.

2010 Papers

C. Ulaganathan, N. Nambiar, K. Cornett, J.A. Yager, R. Greenwell, B. Prothro, K. Tham, S. Chen, R.S. Broughton, G. Fu, B.J. Blalock, C.L. Britton, Jr., M.N. Ericson, H.A. Mantooth, M. Mojarradi, R.W. Berger, and J.D. Cressler, "A SiGe BiCMOS Instrumentation Channel for Extreme Environment Applications," VLSI Design, vol. 2010, Article ID 156829, pp. 1-12 (on-line), 2010.

K.A. Moen and J.D. Cressler, "Measurement and Modeling of Carrier Transport Parameters Applicable to SiGe BiCMOS Technology Operating in Extreme Environments," IEEE Transactions on Electron Devices, vol. 57, pp. 551-561, 2010.

A. Appaswamy, P. Chakraborty, and J.D. Cressler, "Influence of Interface Traps on the Temperature Sensitivity of MOSFET Drain Current Variations," IEEE Electron Device Letters, vol. 31, pp. 387-389, 2010.

J. Yuan, K. Moen, J.D. Cressler, and H. Rücker, "SiGe HBT CML Ring Oscillator with 2.3 ps Gate Delay at Cryogenic Temperatures," IEEE Transactions on Electron Devices, vol. 57, pp. 1183-1187, 2010.

E.P. Wilcox, S.D. Phillips, J.D. Cressler, P.W. Marshall, M.A. Carts, L. Richmond, and B. Randall, "Non-TMR SEU-Hardening Techniques for SiGe HBT Shift Registers and Clock Buffers," IEEE Transactions on Nuclear Science, vol. 57, pp. 2119-2123, 2010.

R. Arora, J. Mitard, A. Madan, E. Simoen, E.X. Zhang, D.M. Fleetwood, B.K. Choi, R.D. Schrimpf, K.F. Galloway, S.R. Kulkarni, M. Meuris, C. Claeys, and J.D. Cressler, "Effects of Halo Doping and Si Capping Layer Thickness on Total Dose Effects in Ge p-MOSFETs," IEEE Transactions on Nuclear Science, vol. 57, pp. 1933-1939, 2010.

K.C. Praveen, N. Pushpa, Y.P. Prabakara Rao, G. Govindaraj, J.D. Cressler and A.P.G. Prakash,"Applications of Advanced 200 GHz SiGe HBTs for High Dose Radiation Environments," Solid State Electronics, vol. 54, pp. 1554-1560, 2010.

E.P. Wilcox, S.D. Phillips, J.D. Cressler, G. Vizkelethy, P.W. Marshall, J.A. Babcock, K. Kruckmeyer, R. Eddy, G. Cestra, and B. Zhang, "Single Event Transient Hardness of a New Complementary (npn + pnp) SiGe HBT Technology on Thick-film SOI," IEEE Transactions on Nuclear Science, vol. 57, pp. 3293-3297, 2010.

S. Phillips, K.A. Moen, L. Najafizadeh, R. Diestelhorst, A.K. Sutton, J.D. Cressler, G. Vizkelethy, P. Dodd, and P. Marshall, "A Comprehensive Understanding of the Efficacy of N-Ring SEE Hardening Methodologies in SiGe HBTs," IEEE Transactions on Nuclear Science, vol. 57, pp. 3400-3406, 2010.

M. Turowski, J.A. Pellish, K.A. Moen, A. Raman, J.D. Cressler, and R. Reed, "Reconciling 3-D Mixed-Mode Simulations and Measured Single-Event Transients in SiGe HBTs," IEEE Transactions on Nuclear Science, vol. 57, pp. 3342-3348, 2010.

S.J. Horst, S.D. Phillips, P. Saha, J.D. Cressler, D. McMorrow, P. Marshall, H. Gustat, B. Heinemann, G.G. Fisher, D. Knoll, and B. Tillack, "A Theory of Single-Event Transient Response in Resonant Tank Oscillators," IEEE Transactions on Nuclear Science, vol. 57, pp. 3349-3357, 2010.

T. Thrivikraman, E. Wilcox, S.D. Phillips, J.D. Cressler, C. Marshall, G. Vizkelethy, P. Dodd, and P. Marshall, "Design of Digital Circuits Using Inverse-mode Cascode SiGe HBTs for Single Event Upset Mitigation," IEEE Transactions on Nuclear Science, vol. 57, pp. 3582-3587, 2010.

K.A. Moen, E.P. Wilcox, S.D. Phillips, J.D. Cressler, H. Nayfeh, A. Sutton, D. McMorrow, G. Vizkelethy, and P. Dodd, "Evaluating the Influence of Various Body-Contacting Schemes on Single Event Transients in 45 nm SOI CMOS," IEEE Transactions on Nuclear Science, vol. 57, pp. 3366-3372, 2010.

Z. Xu, G. Niu, L. Luo, J.D. Cressler, P. Marshall, R. Reed, and M. Alles, "Charge Collection and SEU in SiGe HBT Current Mode Logic Operating at Cryogenic Temperatures," IEEE Transactions on Nuclear Science, vol. 57, pp. 3206-3211, 2010.

C.J. Marshall, P.W. Marshall, R.L. Ladbury, A. Waczynski, J.A. Pellish, R.D. Foltz, N.A. Dodds, D.M. Kahle, N. Boehm, R. Arora, J.D. Cressler, R.A. Reed, and K.A. LaBel, "Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Circuit from 16-300K," IEEE Transactions on Nuclear Science, vol. 57, pp. 3078-3086, 2010.

2009 Papers

 J. Andrews, C. Grens, and J.D. Cressler, “Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power Amplifiers,” IEEE Transactions on Electron Devices, vol. 56, pp. 1529-1532, 2009.

A. Madan, S.D. Phillips, J.D. Cressler, P.W. Marshall, Q Liang, and G. Freeman, “Impact of Proton Irradiation on the RF Performance of 65 nm SOI CMOS Technology,” IEEE Transactions on Nuclear Science, vol. 56, pp. 1914-1919, 2009.

C.M. Grens, P. Cheng, and J.D. Cressler, “Reliability of SiGe HBTs for Power Amplifiers -- Part I: Large-Signal RF Performance and Operating Limits,” IEEE Transactions on Device and Materials Reliability, vol. 9, pp. 431-439, 2009.

P. Cheng, C.M. Grens, and J.D. Cressler, “Reliability of SiGe HBTs for Power Amplifiers -- Part II: Underlying Physics and Damage Modeling,” IEEE Transactions on Device and Materials Reliability, vol. 9, pp. 440-448, 2009.

N. Pushpa, A.P. Gnana Prakash, K.C. Praveen, J.D. Cressler, and D. Revannasiddaiah, “An investigation of electron and oxygen ion damage in Si npn RF power transistors,” Radiation Effects and Defects in Solids vol. 164, pp. 592–603, 2009.

L. Luo, G. Niu, K. Moen, and J.D. Cressler, “Compact Modeling of the Temperature Dependence of Parasitics Resistances in SiGe HBTs Down to 30 K,” IEEE Transactions on Electron Devices, vol. 56, pp. 2169-2177, 2009.

S. Courrèges, Y. Li, Z. Zhao, K. Choi, A. Hunt, S. Horst, J.D. Cressler, and J. Papapolymerou, “A Ka-Band Electronically Tunable Ferroelectric Filter,” IEEE Microwave and Wireless Components Letters, vol. 10, no. 6, pp. 356-358, 2009.

J.A. Pellish, R.A. Reed, D. McMorrow, G. Vizkelethy, J. Baggio, O. Duhmael, S.D. Phillips, A.K. Sutton, R. Diestelhorst, J.D. Cressler, P.E. Dodd, M.L. Alles, R.D. Schrimpf, P.W. Marshall, and K.A. LaBel, “Heavy Ion Microbeam and Broadbeam Transients in SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3078-3084, 2009.

A. Madan, S.D. Phillips, E.P. Wilcox , J.D. Cressler, P.W. Marshall, P.F. Cheng, L. Del Castillo, Q. Liang, and G. Freeman, “The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3056-3261, 2009.

S.D. Phillips, T. Thrivikraman, A. Appaswamy, A.K. Sutton, J.D. Cressler, G. Vizkelethy, P.E. Dodd, R.A. Reed, and P.W. Marshall, “A Novel Device Architecture for SEU Mitigation: The Inverse-Mode Cascode SiGe HBT,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3393-3401, 2009.

P. Cheng, J.A. Pellish, M.A. Carts, S. Phillips, E. Wilcox, T. Thrivikraman, L. Najafizadeh, J.D. Cressler, and P.W. Marshall, “Re-examining TID Hardness Assurance Test Protocols for SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3318-3325, 2009.

L. Najafizadeh, R.M. Diestelhorst, M. Bellini, S.D. Phillips, P.K. Saha, J.D. Cressler, G. Vizkelethy, and P.W. Marshall, “Single Event Transient Response of SiGe Voltage References and Its Impact on the Performance of Analog and Mixed-Signal Circuits,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3469-3476, 2009.

R.M. Diestelhorst, S. Phillips, A. Appaswamy, A.K. Sutton, J.D. Cressler, J.A. Pellish, R.A. Reed, G. Vizkelethy, P.W. Marshall, H. Gustat, B. Heinemann, G.G. Fischer, D. Knoll, and B. Tillack, “Using Junction Isolation to Single-Event Radiation Harden a 200 GHz SiGe:C HBT Technology Containing No Deep Trenches,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3402-3407, 2009.

T. Zhang, X. Wei, G. Niu, J.D. Cressler, P.W. Marshall, and R.A. Reed, “A Mechanism versus SEU Impact Analysis of Collector Charge Collection in SiGe HBT Current Mode Logic,” IEEE Transactions on Nuclear Science, vol. 56, pp. 3071-3077, 2009.

L. Najafizadeh, J. Adams, S.D. Phillips, K.A. Moen, J.D. Cressler, S. Aslam, T. Stevenson, and B. Meloy, "Sub-1K Operation of SiGe Transistors and Circuits," IEEE Electron Device Letters, vol. 30, pp. 508-510, 2009.

A. Appaswamy, S. Phillips, and J.D. Cressler, "Optimizing Inverse Mode SiGe HBTs for Immunity to Heavy-ion Induced, Single Event Upset," IEEE Electron Device Letters, vol. 30, pp. 511-513, 2009.

J. Yuan, J.D. Cressler, R. Krithivasan, T. Thrivikraman, M.H. Khater, D.C. Ahlgren, A.J. Joseph, and J.-S. Rieh, "On the Performance Limits of Cryogenically-Operated SiGe HBTs and Its Relation to Scaling for TeraHertz Speeds," IEEE Transactions on Electron Devices, vol. 56, pp. 1007-1019, 2009.

A. Madan, J.D. Cressler, and S. Koester, "Low-Frequency Noise in Buried-Channel SiGe n-MODFETs," Solid-State Electronics, vol. 53, pp. 901-904, 2009.

2008 Papers

J.-L. Olvera-Cervantes, J.D. Cressler, J.-L. Medina-Monroy, T. Thrivikraman, B. Banerjee, and J. Laskar, “A New Analytical Method for Robust Extraction of the Small-Signal Equivalent Circuit for SiGe HBTs Operating at Cryogenic Temperatures,” IEEE Transactions on Microwave Theory and Techniques, vol. 56, pp. 568-574, 2008.

C.M. Grens, J.D. Cressler, and A.J. Joseph, “On Common-Base Avalanche Instabilities in SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 55, pp. 1276-1285, 2008.

E.J. Montes, R.A. Reed, J.A. Pellish, M.L. Alles, R.D. Schrimpf, R. A. Weller, M. Varadharajaperumal, G. Niu, A.K. Sutton, R. Diestelhorst, G. Espinel, R. Krithivasan, J.P. Comeau, J.D. Cressler, P.W. Marshall, and G. Vizkelethy, “Single Event Upset Mechanisms for Low Energy Deposition Events in SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 55, pp. 1581-1587, 2008.

M.A. Morton, J.P. Comeau, J.D. Cressler, M. Mitchell, and J. Papapolymerou, “A 5-bit Silicon-based X-band Phase Shifter Using a Hybrid pi/t High-pass/Low-pass Topology,” IET Microwaves, Antennas, and Propagation, vol. 2, pp. 19-22, 2008.

T.K. Thrivikraman, J. Yuan, J.C. Bardin, H. Mani, J.D. Cressler, and S. Weinreb, “SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers,” IEEE Microwave and Wireless Components Letters, vol. 18, pp. 476-478, 2008.

E.J. Montes, R.A. Reed, J.A. Pellish, M.L. Alles, R.D. Schrimpf, R. A. Weller, M. Varadharajaperumal, G. Niu, A.K. Sutton, R. Diestelhorst, G. Espinel, R. Krithivasan, J.P. Comeau, J.D. Cressler, P.W. Marshall, and G. Vizkelethy, "Single Event Upset Mechanisms for Low Energy Deposition Events in SiGe HBTs," IEEE Transactions on Nuclear Science, vol. 55, pp. 1581-1587, 2008.

Yao, D. Dai, R.C. Jaeger, and J.D. Cressler, "A 12-Bit Cryogenic and Radiation-Tolerant Digital-to- Analog Converter for Aerospace Extreme Environment Applications," IEEE Transactions on Industrial Electronics, vol. 55, pp. 2810-2819, 2008.

S.Y. Lee, C. Zhu, J.D. Cressler, and S.-H. Lee, “Emitter Scaling Dependence of Mixed-Mode Reliability Degradation in Silicon-Germanium Heterojunction Bipolar Transistors,” Japanese Journal of Applied Physics, vol. 47, no. 7, pp. 5309-5313, 2008.

J.P. Comeau, M.A. Morton, W.-M.L. Kuo, T. Thrivikraman, J.M. Andrews, C. Grens, J.D. Cressler, J.Papapolymerou, and M. Mitchell, “A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar Modules,” IEEE Journal of Solid-State Circuits, vol. 43, pp. 1889-1896, 2008.

T. Thrivikraman, P. Cheng, S. Phillips, J. Comeau, M. Morton, J.D. Cressler, and P. Marshall, "On the Radiation Tolerance of SiGe HBT and CMOS-based Phase Shifters for Space-based, Phase-Array Antenna Systems," IEEE Transactions on Nuclear Science, vol. 55, pp. 3246-3252, 2008.

M. Bellini, S. Phillips, R.M. Diestelhorst, P. Cheng, J.D. Cressler, P.W. Marshall, M. Turowski, G. Avenier, A. Chantre, and P. Chevalier, "Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on Thin-Film SOI Technology," IEEE Transactions on Nuclear Science, vol. 55, pp. 3197-3201, 2008.

L. Najafizadeh, T. Vo, S. Phillips, P. Cheng, J.D. Cressler, M. Mojarradi, and P.W. Marshall, "The Effects of Proton Irradiation on the Performance of High-Voltage nMOSFETs Implemented in a Low-Voltage SiGe BiCMOS Platform," IEEE Transactions on Nuclear Science, vol. 55, pp. 3253-3258, 2008.

J.A. Pellish, R.A. Reed, N.D. Pate, D. McMorrow, J.S. Melinger, J.A. Kozub, P.W. Marshall, A.K. Sutton, R.M. Diestelhorst, S. Phillips, J.D. Cressler, R.A. Weller, R.D. Schrimpf, and G.F. Niu, "Laser-Induced Current Transients in Silicon-Germanium HBTs," IEEE Transactions on Nuclear Science, vol. 55, pp. 2936-2942, 2008.

X. Wei, T. Zhang, G. Niu, M. Varadharajaperumal, J. D. Cressler, and P. W. Marshall, "3-D Simulation of Single Event Transients in SiGe HBT Emitter Followers and Resultant Hardening Guidelines," IEEE Transactions on Nuclear Science, vol. 55, pp. 3360-3366, 2008.

2007 Papers

J. Yuan, J.D. Cressler, C. Zhu, Y. Cui, G. Niu, Q. Liang, and A.J. Joseph,  “An Investigation of Negative Differential Resistance and Novel Collector Current Kink Effects in SiGe HBTs Operating at Cryogenic Temperatures,” IEEE Transactions on Electron Devices, vol. 54, pp. 504-516, 2007.

J.P. Comeau, L. Najafizadeh, J. Andrews, A.P.G. Prakash, and J.D. Cressler, “An Exploration of Substrate Coupling at K-Band Between a SiGe HBT Power Amplifier and a SiGe HBT Voltage-Controlled-Oscillator,” IEEE Microwave and Wireless Components Letters, vol. 17, pp. 349-351, 2007.

A. Appaswamy, M. Bellini, W.-M.L. Kuo, P. Cheng, J. Yuan, C. Zhu, J.D. Cressler, G. Niu, and A.J. Joseph, “Impact of Scaling on the Inverse Mode Operation of SiGe HBTs,” IEEE Transactions on Electron Devices, vol. 54, pp. 1492-1501, 2007.

C.M. Grens, J.D. Cressler, J.A. Andrews, Q. Liang, and A.J. Joseph, “The Effects of Scaling and Bias Configuration on Operating Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits,” IEEE Transactions on Electron Devices, vol. 54, pp. 1605-1616, 2007.

R.A. Reed, G. Vizkelethy, J.A. Pellish, B. Sierawski, K.M. Warren, M. Porter, J. Wilkinson, P.W. Marshall, G. Niu, J.D. Cressler, R.D. Schrimpf, A. Tipton, and R.A. Weller, “Applications of Heavy Ion Microprobe For Single Event Effects Analysis,” Nuclear Instruments and Methods in Physics Research B,  vol. 261, pp. 443-446, 2007. 

P. Cheng, C. Zhu, A. Appaswamy, and J.D. Cressler, “A New Current-Sweep Method for Assessing the Mixed-Mode Damage Spectrum of SiGe HBTs,” IEEE Transactions on Device and Materials Reliability, vol. 7, pp. 479-487, 2007.

D.K. Chen, R.D. Schrimpf, D.M. Fleetwood, K.F. Galloway, H. Lee, G. Lucovsky, B. Jun, and J.D. Cressler, “Total Dose Response of HfSiON MOS Capacitors,” IEEE Transactions on Nuclear Science, vol. 54, pp. 1931-1937, 2007.

P. Cheng, B. Jun, A.K. Sutton, C. Zhu, A. Appaswamy, J.D. Cressler, R.D. Schrimpf, and D.M. Fleetwood, “Probing Radiation- and Hot Electron-Induced Damage Processes in SiGe HBTs Using Mixed-Mode Electrical Stress,” IEEE Transactions on Nuclear Science, vol 54, pp. 1938-1945, 2007.

A.K. Sutton, J.P. Comeau, R. Krithivasan, J.D. Cressler, J.A. Pellish, R.A. Reed, P.W. Marshall, M. Varadharajaperumal, G. Niu, and G. Vizkelethy, “An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs,” IEEE Transactions on Nuclear Science, voil. 54, pp. 2044-2052, 2007.

T.S. Mukherjee, K.T. Kornegay, A.K. Sutton, R. Krithivasan, J.D. Cressler, G. Niu, and P.W. Marshall, “A Novel Circuit-Level SEU-Hardening Technique For Low-Voltage, Ultra-High-Speed SiGe HBT Logic Circuits,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2086-2091, 2007.

B. Jun, A. Sutton, R.M. Diestelhorst, G.J. Duperon, J.D. Cressler, J.D. Black, T. Haeffner, R.A. Reed, M.L. Alles, R.D. Schrimpf, D.M. Fleetwood, and P.W. Marshall, “The Application of RHBD to n-MOSFETs Intended for Use in Cryogenic-Temperature Radiation Environments,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2100-2105, 2007.

R.M. Diestelhorst, S. Finn, B. Jun, A.K. Sutton, P. Cheng, P.W. Marshall, J.D. Cressler, R.D. Schrimpf, D.M. Fleetwood, H. Gustat, B. Heinemann, G.G. Fischer, D. Knoll, and B. Tillack, “The Effects of X-Ray and Proton Irradiation on a 200 GHz / 90 GHz Complementary (npn + pnp) SiGe:C HBT Technology,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2190-2195, 2007.

L. Najafizadeh, B. Jun, J.D. Cressler, A.P.G. Prakash, P.W. Marshall, and C.J. Marshall, “A Comparison of the Effects of X-Ray and Proton Irradiation on the Performance of SiGe Precision Voltage References,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2238-2244, 2007.

M. Bellini, B. Jun, A.C. Appaswamy, P. Cheng, J.D. Cressler, P.W. Marshall, B. El-Kareh, S. Balster, and H. Yasuda, “The Effects of Proton Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2245-2250, 2007.

A. Madan, B. Jun, R.M. Diestelhorst, A. Appaswamy, J.D. Cressler, R.D. Schrimpf, D.M. Fleetwood, T. Isaacs-Smith, J.R. Williams, and S.J. Koester, “Radiation Tolerance of Si/SiGe n-MODFETs,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2251-2256, 2007.

J.A. Pellish, R.A. Reed, R.A. Weller, M.H. Mendenhall, P.W. Marshall, A.K. Sutton, R. Krithivasan, J.D. Cressler, S.M. Currie, R.D. Schrimpf, K.M. Warren, B.D. Sierawski, and G. Niu, “On-Orbit Event Rate Calculations for SiGe HBT Shift Registers,” IEEE Transactions on Nuclear Science, vol. 54, pp. 2322-2329, 2007.

M. Varadharajaperumal, G. Niu, X. Wei, T. Zhang, J.D. Cressler, R.A. Reed, and P.W. Marshall, “3-D Simulation of SEU Hardening of SiGe HBTs Using Shared Dummy Collector,” IEEE Transactions on Nuclear Science vol. 54, pp. 2330-2337, 2007.

2006-1986 Papers