Invited Papers

J.D. Cressler, C. Coen, S. Zeinolabedinzadeh, M. Oakley, R. Schmid, P. Song, and P. Chakraborty, “SiGe Technology as a mm-wave Platform: Scaling Issues, Reliability Physics, Circuit Performance and New Opportunities,” Proceedings of the 2016 IEEE Compound Semiconductor Integrated Circuits Symposium, pp. 1-13, 2016.

J.D. Cressler, “Beyond the Boundaries: Enabling New Circuit Opportunities by Using SiGe HBTs in Counterintuitive Ways,” Proceedings of the 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 1-8, 2016.

N. Lourenco and J.D. Cressler, “Radiation Effects in Silicon-Germanium Devices and Circuits,” Proceedings of the 2015 GOMAC-Tech - Government Microcircuit Applications and Critical Technology Conference, pp. 1-6 (on CDROM), 2015.

J.D. Cressler, “Device-to-Circuit Interactions in SiGe Technology: Challenges and Opportunities,” Proceedings of the 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 45-55, 2014.

C.T. Coen, A.C. Ulusoy, R.L. Schmid, N. Ehsan, J.R. Piepmeier, and J.D. Cressler, “Development of Silicon-Germanium Circuits for High-Frequency Small Satellite-Based Integrated Radiometers,” US National Committee (USNC) of the International Union of Radio Science (URSI) National Radio Science Meeting (NRSM), p. 1, 2014.

J.D. Cressler, “Radiation Effects in SiGe Technology,” IEEE Transactions on Nuclear Science, vol. 60, pp. 1992-2014, 2013.

J.D. Cressler, “A Retrospective on the SiGe HBT: What We Do Know, What We Don't Know, and What We Would Like to Know Better,” Proceedings of the 2013 IEEE Topical Workshop on Silicon Monolithic Integrated Circuits in RF Systems, pp. 81-83, 2013.

S. Phillips, R. Arora, K. Moen, N. Lourenco, and J.D. Cressler, “Radiation Effects ion Sub-100nm Strained-Silicon CMOS and SiGe BiCMOS RF Technology Platforms,” Proceedings of the 2012 GOMAC-Tech - Government Microcircuit Applications and Critical Technology Conference,pp. 1-4 (on CDROM), 2012.

J.D. Cressler, "Reflections on the Gentle Art of Effective Teaching and Mentoring," IEEE Potentials, vol. 30, pp. 23-26, July/August issue, 2011.

B. Blalock, J.D. Cressler, A. Mantooth, R. Berger, M.Mojarradi, M. Alles, R. Reed, W. Johnson, F. Dai, G. Niu, J. Holmes, P.McClusky, L. Peltz, and R. Frampton, An Overview of NASA’s SiGe Integrated Electronics for Extreme Environments Project, Proceedings of the 2011 GOMAC-Tech – Government Microcircuit Applications and Critical Technology Conference pp. 193-196, 2011.

J.D. Cressler, "Silicon-Germanium as an Enabling Technology for Extreme Environment Electronics," IEEE Transactions on Device and Materials Reliability, vol. 10, pp. 437-448, 2010.

A. Madan, A. Appaswamy, and J.D. Cressler, "Operation of Strained-Si CMOS and SiGe HFETs in Extreme Environments," Proceedings of the 15th International Workshop on the Physics of Semiconductor Devices, pp. 1-8 (on CD ROM), 2009.

J.D. Cressler, “Silicon-Germanium as an Enabling IC Technology for Extreme Environment Electronics,” Proceedings of the 2008 IEEE Aerospace Conference, pp. 1-7 (on CD ROM), 2008.

J.D. Cressler, “Emerging Application Opportunities for SiGe Technology,” Proceedings of the 2008 IEEE Custom Integrated Circuits Conference, pp. 57-64, 2008.

J.D. Cressler, M. Mojarradi, B. Blalock, W. Johnson, G. Niu, F. Dai, A. Mantooth, J. Holmes, M. Alles, R. Reed, P. McCluskey, R. Berger, R. Garbos, L. Peltz, A. Joseph, and C. Eckert, “SiGe Integrated Electronics for Extreme Environments,” Proceedings of the 2007 GOMAC-Tech - Government Microcircuit Applications and Critical Technology Conference, pp. 327-331, 2007.

J.D. Cressler, “SiGe BiCMOS Technology: an IC Design Platform for Extreme Environment Electronics Applications,” Proceedings of the 2007 IEEE International Reliability Physics Symposium, pp. 141-149, 2007.

J.D. Cressler, “Using SiGe Technology in Extreme Environments,” Proceedings of the 2007 IEEE International Semiconductor Device Research Symposium, paper WP2-01, pp. 1, 2007 (on CD ROM).

J.D. Cressler, “Silicon-Germanium as an Enabling IC Technology for Extreme Environment Electronics,” Proceedings of the 2008 IEEE Aerospace Conference,” pp. 1-7 (on CD ROM), 2008.

J.D. Cressler, “Issues and Opportunities for Complementary SiGe HBT Technology,” Proceedings of the 2006 Electrochemical Society Symposium on SiGe and Ge: Materials, Processing, and Devices, pp. 893-912, 2006.

J.D. Cressler, “SiGe HBT Reliability Issues Associated with Operation in Extreme Environments,” Proceedings of the 2006 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 3-7, 2006.   

J.D. Cressler, "Using SiGe HBTs for Electronics Applications Operating at Cryogenic Temperatures," Proceedings of the 2005 IMAPS Workshop on Advanced Electronic Packages and Devices in Extreme Cold Environments, pp. 62-67, 2005.

J.D. Cressler, "Noise in SiGe HBTs: Opportunities and Challenges," Proceedings of the Third SPIE International Symposium on Fluctuations and Noise, Noise in Devices and Circuit III, vol. 5844, pp. 101-119, 2005.

J.D. Cressler, "Using SiGe HBTs for Extreme Environment Electronics,” Proceedings of the 2005 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 248-251, 2005.

J.D. Cressler, “Emerging Reliability Issues for SiGe HBTs for Mixed-Signal Circuit Applications,” IEEE Transactions on Device and Materials Reliability, vol. 4, pp. 222-236, 2004.

B. Gaucher, T. Beukema, S. Reynolds, B. Floyd, T. Zwick, U. Pfeiffer, D. Liu, and J.D. Cressler, “mm-Wave Transceivers Using SiGe HBT Technology,” Proceedings of the 2004 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 81-84, 2004.

J.D. Cressler, “Using SiGe HBTs for Mixed-Signal Circuits and Systems: Opportunities and Challenges,” Proceedings of the 2004 Electrochemical Society Symposium on SiGe: Materials, Processing, and Devices,
pp. 3-14, 2004.

J.D. Cressler, T. Bowen, G.F. Niu, S. Zhang, and A.J. Joseph, “The Cryogenic Operation of SiGe HBTs Optimized for Low RF Noise,” Proceedings of the 4th European Workshop on Low-Temperature Electronics (WOLTE4), pp. 57-60, Noordwijk, the Netherlands, June 2000.

G.F. Niu, S. Zhang, J.D. Cressler, A.J. Joseph, J. Fairbanks, L. Larson, C.S. Webster, and D. Harame, “Noise Modeling and SiGe Profile Design Tradeoffs for RF Applications,” Proceedings of the 2000 IEEE MTT Topical Workshop on Silicon Monolithic Integrated Circuits in RF Systems, pp. 9-14, Garmish, Germany, April 2000.

J.D. Cressler, “SiGe HBT BiCMOS Technology for RF System-on-a-chip Solutions,” Proceedings of the XXVIth General Assembly of the International Union of Radio Science (URSI), p. 233, August 1999.

J.D. Cressler, “SiGe HBT BiCMOS Technology for Cryogenic Applications,” IEEE Solid-State Circuits and Technology Council (SSCTC) Workshop on Low-Temperature Electronics, Washington DC, October 1998.

J.D. Cressler, “SiGe HBT Technology: a New Contender for Si-Based RF and Microwave Circuit Applications,” IEEE Transactions on Microwave Theory and Techniques (special issue on Microwave Circuits on Silicon Substrates), vol. 46, pp. 572-589, 1998.

J.D. Cressler, “Prospects for the Cryogenic Operation of Silicon-Germanium Technology,” Extended Abstracts of the 1995 Electrochemical Society 1997 Spring Meeting (ECS), abstract # 556, pp. 707-708, May 1997.

J.D. Cressler, "Prospects for the Cryogenic Operation of Silicon-Germanium Technology,"Proceedings of the 1997 ECS Symposium on Low-Temperature Electronics and High-Temperature Superconductivity, C. Claeys and S.I. Raider, editors: Electrochemical Society, Pennington, NJ, pp. 215-231, 1997.

J.D. Cressler, "Re-Engineering Silicon: Si-Ge Heterojunction Bipolar Technology," IEEE Spectrum, pp. 49-55, March 1995.

D.L. Harame, J.H. Comfort, J.D. Cressler, E.F. Crabbé, J.Y.-C. Sun, B.S. Meyerson, and T. Tice, "Si/SiGe Epitaxial-Base Transistors - Part I: Materials, Physics, and Circuits," IEEE Transactions on Electron Devices, vol. 42 (special issue on Bipolar/BiCMOS devices and technologies), pp. 455-468, 1995.

D.L. Harame, J.H. Comfort, J.D. Cressler, E.F. Crabbé, J.Y.-C. Sun, B.S. Meyerson, and T. Tice, "Si/SiGe Epitaxial-Base Transistors - Part II: Process Integration and Analog Applications," IEEE Transactions on Electron Devices, vol. 42 (special issue on Bipolar/BiCMOS devices and technologies), pp. 469-482, 1995.

D.L. Harame, L. Larson, M. Case, S. Kovacic, S. Voinigescu, T. Tewksbury, D. Nguyen-Ngoc, K. Sein, J.D. Cressler, S.-J. Jeng, J. Malinowski, R. Groves, B. Eki, D. Sunderland, D. Rensch, M. Gilbert, K. Schonenberg, D. Ahlgren, S. Rosenbaum, J. Glenn, and B. Meyerson, "SiGe HBT Technology: Device and Application Issues," Technical Digest of the 1995 International Electron Device Meeting, pp. 731-734, December 1995.

J.D. Cressler, "Status and Trends in Bipolar Technologies for Cryogenic Operation," Extended Abstracts of the 1995 Electrochemical Society 1995 Spring Meeting (ECS), abstract # 516, pp. 790-791, May 1995.

J.D. Cressler, "Status and Trends in the Cryogenic Operation of SiGe Bipolar Technology,"Proceedings of the 1995 ECS Symposium on Low-Temperature Electronics and High-Temperature Superconductivity, C. Claeys and S.I. Raider, editors: Electrochemical Society, Pennington, NJ, pp. 159-177, 1995.

J.D. Cressler, "Operation of SiGe Bipolar Technology at Cryogenic Temperatures," Journal de Physique IV, Colloque C6 Supplément au Journal de Physique III, vol. 4, pp. 101-110, 1994.

J.D. Cressler, "Operation of SiGe Bipolar Technology at Cryogenic Temperatures," presented at the 1st European Workshop on Low-Temperature Electronics (WOLTE1), Leuven, Belgium, June 1994.

J.D. Cressler, D.L. Harame, J.H. Comfort, J.M.C. Stork, B.S. Meyerson, T.E. Tice, "Silicon-Germanium Heterojunction Bipolar Technology: The Next Leap in Silicon?," plenary address delivered at the International Solid-State Circuits Conference (ISSCC), February 1994 in San Francisco, CA. Full length paper appeared in the 1994 IEEE International Solid-State Circuits Conference Digest of Technical Papers, pp. 24-27, 1994.

J.D. Cressler, "The Cryogenic Operation of SiGe Heterojunction Bipolar Transistors: Status and Opportunities," Extended Abstracts of the 1993 Electrochemical Society Spring Meeting (ECS), abstract # 1020, pp. 1481-1482, May 1993.

J.D. Cressler, "The Cryogenic Operation of SiGe Heterojunction Bipolar Transistors: Status and Opportunities," Low Temperature Electronics and High Temperature Superconductivity, S.I. Raider, C. Claeys, D.P. Foty, T. Kawai, and R.K. Kirschman, Editors, Electrochemical Society, Pennington, NJ, pp. 149-162, 1993.

J.D. Cressler, "SiGe-Base Bipolar Transistors for Cryogenic BiCMOS Applications," MicroElectronic Engineering, vol. 19, pp. 841-848, 1992.

J.D. Cressler, "SiGe-Base Bipolar Transistors for Cryogenic BiCMOS Applications," presented at the 22nd European Solid State Device Research Conference (ESSDERC), September 1992.

J.D. Cressler, "High-Speed Silicon Bipolar Technology for the 1990's and Beyond," Proceedings of the Engineering Foundation Conference on High-Speed Optoelectronic Devices, Banff, Alberta Canada, August 1992.

J.D. Cressler, “Is the Silicon Bipolar Transistor Useful for High-Speed Logic Applications at 77K? Myths versus Reality,” Extended Abstracts of the 1991 Electrochemical Society Spring Meeting (ECS), pp. 421-422, May 1991.

J.D. Cressler, “Is the Silicon Bipolar Transistor Useful for High-Speed Applications at 77K? Myths versus Reality,” Proceedings of the 1991 Symposium on Low-Temperature Electronic Device Operation, D. Foty, N. Saks, S. Raider, and G. Oleszek, Editors. Pennington, NJ: Electrochemical Society, pp. 212-220, 1991.