Conference Papers

2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 - 1986

2019 Papers

I. Ju, M. McPartlin, C.-W.P. Huang, M. Doherty, B. Vaillancourt, C.D. Cheon, and J.D. Cressler, "A Highly Linear, High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifier Using a Compact 2nd Harmonic-Shorted Four-way Transformer and Integrated Thermal Sensors," Technical Digest of the IEEE International Solid-State Circuits Conference, pp. 80-81, 2019.

C.T. Coen, W. Williams, N.E. Lourenco, M. Frounchi, C. Cheon, and J.D. Cressler, "MicroNimbus: A Single-Chip 60 GHz SiGe Radiometer for Spaceborne Remote Sensing," Proceedings of the 2019 GOMAC-Tech - Government Microcircuit Applications and Critical Technology Conference, pp. 1-4, 2019.

P. Goley and J.D. Cressler, "Silicon-Based Electronic-Photonic Integrated Circuits: Resiliency in the Space Environment," Proceedings of the 2019 GOMAC-Tech - Government Microcircuit Applications and Critical Technology Conference, pp. 1-4, 2019.

N. Lourenco, D. Denison, A. Cardoso, C. Coen, M.-K. Cho, and J.D. Cressler, "Transversal Radio Frequency Filter Integrated Circuit (TRAFFIC)," Proceedings of the 2019 GOMAC-Tech - Government Microcircuit Applications and Critical Technology Conference, pp. 1-4, 2019.

S. Zeinolabedinzadeh, A.C. Ulusoy, R.L. Schmid, F. Inanlou, T. Chi, J.S. Park, H. Wang, and J.D. Cressler, "W-Band SiGe Transceiver with Novel Built-in Self-Test Functionality," Proceedings of the 2019 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systemspp. 1-4, 2019.

2018 Papers

A.A. Nawaz, J.A. Qayyum, A.C. Ulusoy, N. Karaulac, S. Jung, D. Fleischhauer, S. Shankar, J.D. Cressler, and W. Van Noort, "A New Figure-of-Merit for CML Gate Delay Estimation," Proceedings of the IEEE Topical Conference on Sensors and Sensor Networks, pp. 73-76, 2018.

A. Ildefonso and J.D. Cressler, "Radiation Hardening Strategies for SiGe-Based RF Circuits and Systems," Proceedings of the 2018 GOMAC-Tech - Government Microcircuit Applications and Critical Technology Conference, pp. 1-4, 2018.

M.-K. Cho, I. Song, and J.D. Cressler, " True Time Delay-based SiGe Bi-directional T/R Chipset for Large-Scale Wideband Timed Array Antennas," Proceedings of the 2018 IEEE MTT-S Radio Frequency Integrated Circuits Symposium, pp. 1-4, 2018.

M. Frounchi, C. Coen, C.D.Y. Cheon, N. Lourenco, W. Williams, and J.D. Cressler, "A V-Band SiGe Image-Reject Receiver Front-End for Atmospheric Remote Sensing," Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, pp. 223-226, 2018.

S. Rao, T. Chang, I. Song, M.-K. Cho, and J.D. Cressler, "A 1-20 GHz Distributed, Stacked SiGe Power Amplifier," Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, pp. 202-205, 2018.

A.P. Omprakash, A. Ildefonso, G. Tzintzarov, J. Babcock, R. Mukhopadhyay, and J.D. Cressler, "Using SiGe-on-SOI HBTs to Build 300C Capable Analog Circuits," Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, pp. 206-209, 2018.

U.S. Raghunathan, B.R. Wier, Z. Fleetwood, M.A. Oakley, V. Jain, and J.D. Cressler, "Emitter-Base Profile Optimization of SiGe HBTs for Improved Thermal Stability and RF Linearity," Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, pp. 190-193, 2018.

B.R. Wier, R.P. Martinez, U.S. Raghunathan, H. Ying, S. Zeinolabedinzadeh, and J.D. Cressler, "Revisiting Safe Operating Area: SiGe HBT Aging Models for Reliability-Aware Circuit Design," Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, pp. 215-218, 2018.

T. Shi, Y. Gong, S. Ravichandran, V. Sundaram, J.D. Cressler and R. Tummala, "Next Generation of Automotive Radar with Leading-Edge Advances in SiGe Devices and Glass Panel Embedding (GPE)," Proceedings of the 2018 IEEE 68th Electronic Components and Technology Conference, pp. 1245-1250, 2018. doi: 10.1109/ECTC.2018.00192

2017 Papers

Z. Fleetwood and J.D. Cressler, "Radiation Hardening and Heavy-ion to Laser Correlation in SiGe Devices and Circuits," Proceedings of the 2017 GOMAC-Tech - Government Microcircuit Applications and Critical Technology Conference, pp. 1-4, 2017.

I. Ju, M.A. Oakley and J.D. Cressler, "An X-band Inverse Class-F SiGe HBT Cascode Power Amplifier with Harmonic-tuned Output Transformer," Proceedings of the 2017 IEEE MTT-S Radio Frequency Integrated Circuits Symposium, pp. 1-4, 2017.

Y. Gong, M.-K. Cho, and J.D. Cressler, "A Bi-Directional, X-Band 6-Bit Phase Shifter for Phased Array Antennas Using an Active DPDT Switch Technique," Proceedings of the 2017 IEEE MTT-S Radio Frequency Integrated Circuits Symposium, pp. 1-4, 2017.

W. Williams, C. Coen, M. Frounchi, N. Lourenco, and J.D. Cressler, "MicroNimbus: A Cubesat Temperature Profilometer for Earth's Atmosphere Using a Single-chip 60 GHz SiGe Radiometer," Proceedings of the 2017 IEEE International Geoscience and Remote Sensing Symposium, pp. 1-4, 2017.

C.T. Coen, A. Ildefonso, Z.E. Fleetwood, and J.D. Cressler, "A 19-34 GHz SiGe HBT Square-Law Detector with Ultra-Low 1/f Noise for Atmospheric Radiometers," Proceedings of the 2017 European Microwave Integrated Circuits Conference, pp. 163-166, 2017.

M.T. Wachter, A. Ildefonso, Z.E. Fleetwood, N.E. Lourenco, G. Tzintzarov, N.J.-H. Roche, A. Khachatrian, P. McMarr, H. Hughes, J. Warner, D. McMorrow, Pauline Paki, and J.D. Cressler, "The Effects of Total Ionizing Dose on the Transient Response of SiGe BiCMOS Technology," Proceedings of the 2016 Conference on Radiation and Its Effects on Components and Systems, paper J4, pp. 1-4, 2017.

A. Ildefonso, I. Song, Z.E. Fleetwood, N.E. Lourenco, M.T. Wachter, and J.D. Cressler, "Modeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver," Proceedings of the 2016 Conference on Radiation and Its Effects on Components and Systems, paper J9, pp. 1-4, 2017.

R. Perez-Martinez, U.S. Raghunathan, A.P. Omprakash, B.R. Wier, M.A. Oakley, Z.E. Fleetwood, and J.D. Cressler, "Predicting Hard Failures and the Maximum Usable Operational Range of SiGe HBTs," Proceedings of the 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 122-125, 2017.

2016 Papers

I. Ju, M-K. Cho, R. Schmid, M. Mitchell, and J.D. Cressler, "Co-design of a SiGe X-Band, Asymmetric, Low Insertion Loss, High Power Handling SPDT Switch and an Ultra Low Noise LNA for Next-Generation T/R Modules," Proceedings of the 2016 IEEE MTT-S International Microwave Symposium, pp. 1-4, 2016.

I. Song, M.-K. Cho, G. Hopkins, M. Mitchell, and J.D. Cressler, "A 2-22 GHz Wideband Active Bi-directional Power Divider/Combiner in 130 nm SiGe BiCMOS Technology," Proceedings of the 2016 IEEE MTT-S International Microwave Symposium, pp. 1-4, 2016.

C. Coen, S. Zeinolabedinzadeh, M. Kaynak, B. Tillack, and J.D. Cressler, "A Highly-Efficient 138-170 GHz SiGe HBT Frequency Doubler for Power-Constrained Applications," Proceedings of the 2016 IEEE MTT-S Radio Frequency Integrated Circuits Symposium, pp. 23-26, 2016.

U.S. Raghunathan, B. Wier, R.P. Martinez, H. Ying, Z. Fleetwood, S. Zeinolabedinzadeh, A. Omprakash, and J.D. Cressler, "Modeling of High Current Damage in SiGe HBTs Under Pulsed Stress," Proceedings of the 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 17-20, 2016.

M.-K. Cho, I. Song, Z. Fleetwood, and J.D. Cressler, "A Wideband Active Bi-directional SiGe Digital Step Attenuator Using an Active DPDT Switch," Proceedings of the 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 122-125, 2016.

B.R. Wier, U.S. Raghunathan, Z.E. Fleetwood, M.A. Oakley, A.J. Joseph, Vibhor Jain, and J.D. Cressler, "On the Use of Vertical Superjunction Collectors for Enhanced Breakdown Performance in SiGe HBTs," Proceedings of the 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 21-24, 2016.

B.R. Wier, U.S. Raghunathan, Z.E. Fleetwood, M.A. Oakley, A.J. Joseph, Vibhor Jain, and J.D. Cressler, "On the Use of Vertical Superjunction Collectors for Enhanced Breakdown Performance in SiGe HBTs," Proceedings of the 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 21-24, 2016.

2015 Papers

A.C. Ulusoy, R.L. Schmid, M. Kaynak, B. Tillack, and J.D. Cressler, “High-Performance W-band LNA and SPDT Switch in 0.13 µm SiGe HBT Technology,” Proceedings of the 2015 IEEE Radio and Wireless Symposium, pp. 162-164, 2105.

Z.E. Fleetwood, B. Wier, U. Raghunathan, N.E. Lourenco, M. Oakley, A.J. Joseph, and J.D. Cressler, “Optimizing the Vertical Profile of SiGe HBTs to Mitigate Radiation-Induced Upsets,” Proceedings of the 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 72-75, 2015. Best Student Paper Award.

A.P. Omprakash, P.S. Chakraborty, H. Ying, A. Cardoso, A. Ildefonso, and J.D. Cressler, "On the Potential of Using SiGe HBTs on SOI to Support Emerging Applications up to 300C," Proceedings of the 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 27-30, 2015.

R. Schmid, P. Song, C. Coen, A.C. Ulusoy, and J.D. Cressler, "A W-Band Integrated Silicon-Germanium Loop-Back and Front-End Transmit-Receive Switch for Built-In-Self-Test," Proceedings of the 2015 IEEE MTT-S International Microwave Symposium, pp. 1-4, 2015.

A.C. Ulusoy, R.L. Schmid, M. Kaynak, B. Tillack, and J.D. Cressler, "High-Performance W-band LNA and SPDT Switch in 0.13 µm SiGe HBT Technology," Proceedings of the 2015 IEEE Radio and Wireless Symposium, pp.162-164, 2015.

W. Khan, C. Ulusoy, R. Schmid, T. Chi, J.D. Cressler, H. Wang, and J. Papapolymerou, "A D-band (110 to 170 GHz) SPDT Switch in 32 nm CMOS SOI," Proceedings of the 2015 IEEE MTT-S International Microwave Symposium, pp. 1-4, 2015.

2014 Papers

A.S. Cardoso, P. Saha, P.S. Chakraborty, D.M. Fleischhauer, and J.D. Cressler, “Low-loss, Wideband SPDT Switches and Switched-Line Phase Shifter in 180-nm RF CMOS on SOI Technology,” Proceedings of the 2014 IEEE Radio and Wireless Symposium, pp. 199-201, 2014.

A.C. Ulusoy, R.L. Schmid, C. Coen, and J.D. Cressler, “A Switchable-Core SiGe HBT Low-Noise Amplifier for Millimeter-Wave Radiometer Applications,” Proceedings of the 2014 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 22-24, 2014.

S. Jung, P. Song, I. Song, J.D. Cressler and J.A. Babcock, “An Investigation of Temperature Dependent Linearity of Weakly-Saturated, Electrically-Matched NPN and PNP SiGe HBTs,” Proceedings of the 2014 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 86-88, 2014.

P. Song, A.C. Ulusoy, R. Schmid, and J.D. Cressler, “A High Gain, W-band SiGe LNA with Sub-4.0 dB Noise Figure,” Proceedings of the 2014 IEEE MTT-S International Microwave Symposium, paper THP-17, 4 pages, 2014.

I. Song, R. Schmid, D. Howard, S. Jung, and J.D.Cressler, “A 34-110 GHz Wideband, Asymmetric, Broadside-Coupled Marchand Balun in 180 nm SiGe BiCMOS Technology,” Proceedings of the 2014 IEEE MTT-S International Microwave Symposium, paper WEP-20, 4 pages, 2014.

S. Zeinolabedinzadeh, P. Song, M. Kaynak, M. Kamarei, B. Tillack, and J.D. Cressler, “Low Phase Noise and High Output Power 368 GHz and 156 GHz Signal Sources in 130 nm SiGe HBT Technology,” Proceedings of the 2014 IEEE MTT-S International Microwave Symposium, paper THP-18, 4 pages, 2014.

M.A. Oakley, B. Wier, U.S. Raghunathan, P.S. Chakraborty, and John D. Cressler, “On the Reliability of SiGe HBT Cascode Driver Amplifiers,“ Proceedings of the 2014 IEEE MTT-S Radio Frequency Integrated Circuits Symposium, pp. 445-448, 2014.

P. Song, R.L. Schmid, A.Ç. Ulusoy, and J.D. Cressler, “A High-Power, Low-Loss W-band SPDT Switch Using SiGe PIN Diodes,” Proceedings of the 2014 IEEE MTT-S Radio Frequency Integrated Circuits Symposium, pp. 195-198, 2014.

S. Zeinolabedinzadeh, M. Kaynak, W. Khan, M. Kamarei, B. Tillack, J. Papapolymerou, and J.D. Cressler, “A 314 GHz, Fully-Integrated SiGe Transmitter and Receiver with Integrated Antenna,” Proceedings of the 2014 IEEE MTT-S Radio Frequency Integrated Circuits Symposium, pp. 361-364, 2014.

A.C. Ulusoy, R.L. Schmid, W.T. Khan, M. Kaynak, B. Tillack, and John D. Cressler, “An Investigation of fT/fmax Degredation due to Device Interconnects in 0.5 THz SiGe HBT Technology,” Proceedings of the 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 211-214, 2014.

R.L. Schmid and J.D. Cressler, “A Digitally- Controlled Seven-State X-band SiGe Variable Gain Low Noise Amplifier,” Proceedings of the 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 187-190, 2014.

P. Song, A.Ç. Ulusoy, R.L. Schmid, S.N. Zeinolabedinzadeh, and J.D. Cressler, “W-band SiGe Power Amplifiers,” Proceedings of the 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 151-154, 2014.

C. Coen, R. Schmid, J.D. Cressler, M. Kaynak, and B. Tillack, “Ultra-Low Noise and Low Power 18.7 GHz Radiometer LNAs in a 0.5 THz SiGe Technology Utilizing Back-Side Etched Inductors,” Proceedings of the 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 191-194, 2014.

T. Chi, J.S. Park, R.L. Schmid, A.C. Ulusoy, J.D. Cressler, and H. Wang, “A Low-Power and Ultra-Compact W-band Transmitter Front-End in 90 nm SiGe BiCMOS Technology,” Proceedings of the 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 155-158, 2014.

S. Zeinolabedinzadeh, A.L. Vera López, N.E. Lourenco, M. Kaynak, B. Tillack, M. Kamarei, J. Papapolymerou, and J.D. Cressler, “A 2×2, 316 GHz SiGe Scalable Transmitter Array with Novel Phase Locking Method and On-die Antennas, “Low-Power and Ultra-Compact W-band Transmitter Front-End in 90 nm SiGe BiCMOS Technology,” Proceedings of the 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 60-63, 2014.

S. Jung, T. England, I. Song, B. Wier, J.D. Cressler, and J.A. Babcock, “A Complementary SiGe HBT on SOI Low Dropout Voltage Regulator Utilizing a Nulling Resistor,” Proceedings of the 2014 IEEE International Symposium on Circuits and Systems, pp. 2453-2456, 2014.

S. Jung, I. Song, and J.D. Cressler, “Systematic Methodology for Applying Mason’s Signal Flow Graph to Analysis of Feedback Circuits,” Proceedings of the 2014 IEEE International Symposium on Circuits and Systems, pp. 2421-2424, 2014.

F. Inanlou, W. Khan, S. Zeinolabedinzadeh, P. Song, R.L. Schmid, T. Chi, A.C. Ulusoy, J. Papapolymerou, H. Wang, and J.D. Cressler, “Compact, Low-Power, Single-Ended and Differential SiGe W-band LNAs,” Proceedings of the 2014 IEEE European Microwave Symposium, pp. 1396-1399, 2014.

2013 Papers

R. Schmid, T. Quach, A. Mattamana, and J.D. Cressler, “The Analysis of SiGe HBT Switchable Transistor Cores for Low Noise Amplifiers,” Proceedings of the 2013 GOMAC Tech - Government Microcircuit Applications and Critical Technology Conference, pp. 115-118, 2013.

S. Jung, J.D. Cressler, J.A. Babcock, G. Cestra, and A. Buchholz, “A Method to Achieve Low Input Impedance and Independence of Gain-Bandwidth Product in Differential TIAs,” Proceedings of the 2013 IEEE International Symposium on Circuits and Systems, pp. 598-601, 2013.

S. Shankar, W. van Noort, and J.D. Cressler, “Predicting Large-Signal CML Gate Delay Using Y-Parameters for Fast Process Optimization,” Proceedings of the 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 207-210, 2103.

U. Raghunathan, P.S. Chakraborty, B. Weir, J.D. Cressler, H. Yasuda, and P. Menz, “TCAD Modeling of Accumulated Stress Damage DuringTime-Dependent Mixed-mode Stress, “ Proceedings of the 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.179-183, 2013.

D. Howard, T. England, N. Lourenco, A. Cardoso, and J.D. Cressler, “An On-chip SiGe HBT Characterization Circuit for Use in Self-Healing RF Systems,” Proceedings of the 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 203-206, 2013.

R. Schmid, P. Song, and J.D. Cressler, “A Compact, Transformer-Based 60 GHz SPDT RF Switch Utilizing Diode-Connected SiGe HBTs,” Proceedings of the 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.111-114, 2013.

C. Coen, J.R. Piepmeier, and J.D. Cressler, “Integrated Silicon-Germanium Electronics for CUBESAT-based Radiometers,” Proceedings of the 2013 IEEE International Geoscience and Remote Sensing Symposium, pp. 1286-1289, 2013.

B.R. Wier, U.S. Raghunathan, P.S. Chakraborty, J.D. Cressler, H. Yasuda, P. Menz, “Base Current Degradation Mechanisms in NPN SiGe HBTs Subjected to High Current Stress,” Proceedings of the 2013 IEEE International Solid-State Device Research Symposium, pp. 1-2, 2013.

2012 Papers

P.K. Saha, S. Shankar, R. Schmid, R. Mills, and J.D. Cressler, "Analysis and Design of a 3–26 GHz Low-Noise Amplifier in SiGe HBT Technology," Proceedings of the 2012 IEEE Radio and Wireless Symposium, pp. 203-206, 2012.

S. Seth, J.D. Cressler, J.A. Babcock, G. Cestra, T. Krakowski, J. Tang, and A. Buchholz, "A Comparison of Intermodulation Distortion Performance of HICUM and VBIC Compact Models for pnp SiGe HBTs on SOI," Proceedings of the 2012 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 219-222, 2012.

C.H.J. Poh, R.L. Schmid, J.D. Cressler and J. Papapolymerou, "An X-band to Ka-band SPDT Switch Using 200 nm SiGe HBTs," Proceedings of the 2012 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 183-186, 2012.

A. Goyal, M. Swaminathan, A. Chatterjee, D. Howard, and J.D. Cressler, "A Self-Testable SiGe LNA and Built-in-Self-Test Methodology for Multiple Performance Specifications of RF Amplifiers," Proceedings of the 2012 International Symposium on Quality Electronic Design, pp. 7-12, 2012.

T.D. England, R.M. Diestelhorst, S. Finn, L. Najafizadeh, J.D. Cressler, "Cold-capable SiGe BiCMOS Wireline Transceivers for Distributed Electronics Systems," Proceedings of the 2012 IEEE Aerospace Conference, pp. 1-8, 2012 (on CDROM).

S. Shankar, P. Saha, D.C. Howard, R. Diestelhorst, T.D. England, A. Cardoso, and J.D. Cressler, “On-Die Self-Healing of Mixer Image-Rejection Ratio for Mixed-Signal Electronic Systems,” Proceedings of the 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 190-193, 2012.

R.L. Schmid, C.T. Coen, S. Shankar, and J.D. Cressle, “Best Practices to Ensure the Stability of SiGe HBT Cascode Low Noise Amplifiers,” Proceedings of the 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 194-197, 2012.

S. Zeinolabedinzadeh, N. Lourenco, M. Kamarei, and J.D. Cressler, “A V-band Differential SiGe VCO with Varactor-less Tuning,” Proceedings of the 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 198-201, 2012.

L. Najafizadeh, S. Aslam, and J.D. Cressler, “Operation of SiGe Reference Circuits Under Planetary Exnvironmental Conditions,” Proceedings of the 2012 International Workshop on Instrumentation for Planetary Missions, pp. 1-2, 2012.

D. Howard, C.-S. Cho, and J.D. Cressler, “A Broadband, Millimeter Wave, Asymmetrical Marchand Balun in 180 nm SiGe BiCMOS Technology,” Proceedings of the 2012 IEEE MTT-S Radio Frequency Integrated Circuits Symposium, pp. 425-428, 2012.

K.C. Praveen, N. Pushpa, J.D. Cressler and A.P. Gnana Prakash, “A study on the radiation response of two generations of SiGe HBTs to Co-60 gamma and heavy ion irradiation,” Proceedings of the 19th National Symposium on Radiation Physics, pp. 244-247, 2012.

N.E. Lourenco, R.L. Schmid, K.A. Moen, S.D. Phillips, T.D. England, J.D. Cressler, J. Pekarik, J. Adkisson, R. Camillo-Castillo, P. Cheng, J. Ellis-Monaghan, P. Gray, D. Harame, M. Khater, Q. Liu, A. Vallett, B. Zetterlund, V. Jain, and V. Kaushal, "Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology," Proceedings of the 2012 IEEE Nuclear and Space Radiation Effects Conference Data Workshop, pp. 205-209, 2012.

2011 Papers

R. Arora, S. Seth, C.H.J. Poh, J.D. Cressler, A.K. Sutton, and H.M. Nayfeh, "Impact of Source/Drain Contact Spacing on the RF Reliability of 45-nm RF MOSFETs," Proceedings of the 2011 IEEE International Reliability Physics Symposium, pp. 461-466, 2011.

C.A.D. Morcillo, C. Patterson, T.K. Thrivikraman, B. Lacroix, C.T. Coen , C.H.J. Poh, J.D. Cressler, and J. Papapolymerou, "A Lightweight, 64-element, Organic Phased Array with Integrated Transmit-Receive SiGe Circuitry in the X-Band," Proceedings of the 2011 IEEE MTT-S International Microwave Symposium, pp. 1-4, 2011.

S. Shankar, S.J. Horst, P. Saha, D.C. Howard, R. Diestelhorst, T.D. England, and J.D. Cressler, "A Wide-Tuning Range, Amplitude-Locked Test Signal Source for Self-Healing, Mixed-Signal Electronic Systems," Proceedings of the 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 29-32, 2011.

S. Seth, C.H. Poh, T. Thrivikraman, R. Arora, and J.D. Cressler, "Using Saturated SiGe HBTs to Realize Ultra-Low Voltage/Power X-Band Low Noise Amplifiers," Proceedings of the 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 102-105, 2011.

D.C. Howard, P. Saha, S. Shankar, R. Diestelhorst, T. England, and J.D. Cressler, "A UWB SiGe LNA for Multi-band Applications with Process Healing Based on DC Device Characteristic Extraction," Proceedings of the 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 110-113, 2011.

P.K. Saha, D. Howard, S. Shankar and J.D. Cressler, "An Adaptive, Wideband SiGe Image Reject Mixer for a Self-healing Receiver," Proceedings of the 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 98-101, 2011.

P. Chakraborty, K.A. Moen, and J.D. Cressler, "Predictive TCAD Modeling of the Scaling–Induced, Reverse-Biased, Emitter-Base Tunneling Current in SiGe HBTs," Proceedings of the 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.13-16, 2011.

X. Geng, D. Ma, Z. Chen, F. Dai, J.D. Cressler, J.A. Yaeger, M.M. Mojarradi, A. Mantooth, B.J. Blalock and R.W. Berger, "High Speed Channel Resistive Sensor Interface with RHBD in 0.5 µm SiGe BiCMOS for UWT from -180°C to 120°C,"Proceedings of the 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.79-82, 2011.

C.E. Patterson, T.K. Thrivikraman, S.K. Bhattacharya, C.T. Coen, J.D. Cressler, and J. Papapolymerou, "Development of a Multilayer Organic Packaging Technique for a Fully Embedded T/R Module," Proceedings of the 2011 IEEE European Microwave Symposium, pp. 261-264, 2011.

2010 Papers

T.K. Thrivikraman, A. Madan, and J.D. Cressler, "On the Large-Signal Robustness of SiGe HBT LNAs for High-Frequency Wireless Applications," Proceedings of the 2010 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 156-159, 2010.

A. Madan, T.K. Thrivikraman, S. Seth, R. Verma, J. Poh, and J.D. Cressler, "A New and Simple Measurement Approach for Characterizing Intermodulation Distortion Without Using a Spectrum Analyzer," Proceedings of the 2010 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 88-91, 2010.

J.C.-H. Poh, P. Cheng, T.K. Thrivikraman, and J.D. Cressler, "A High Gain, High Linearity, L-Band SiGe Low Noise Amplifier with Fully-integrated Matching Network," Proceedings of the 2010 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 69-71, 2010.

C.E. Patterson, T.K. Thrivikraman, S.K. Bhattacharya, J.D. Cressler, and J. Papapolymerou, "A Lightweight X-Band Organic Antenna Array with Integrated SiGe Amplifier," Proceedings of the 2010 IEEE Radio and Wireless Symposium, pp. 84-87, 2010.

R.M. Diestelhorst, S. Finn, L. Najafizadeh, D. Ma, P. Xi, C. Ulaganathan, J.D. Cressler, B. Blalock, F. Dai, A. Mantooth, L. Del Castillo, M. Mojarradi, and R. Berger, "A Monolithic, Wide-Temperature, Charge Amplification Channel for Piezoelectric Sensing Applications in Extreme Environments," Proceedings of the 2010 IEEE Aerospace Conference, pp. 1-9, 2010.

C. Webber, J. Holmes, M. Francis, R. Berger, A. Mantooth, K. Cornett, B. Blalock, R. Greenwell, J.D. Cressler, R. Diestelhorst, and A. Authurs, "Event Driven Mixed-Signal Modeling Techniques for System-in-Package Functional Verification," Proceedings of the 2010 IEEE Aerospace Conference, pp. 1-15, 2010.

D.B. Thomas, N. Lourenco, J.D. Cressler, and S. Finn, " SiGe Amplifier and Buffer Circuits for High Temperature Applications," Proceedings of the 2010 IMAPS International High-Temperature Electronics Conference, pp. 379-385, 2010.

P.S. Chakraborty, K.A. Moen, J.D. Cressler, H. Ho, H. Yasuda, B. Eklund, and R. Wise, "Predictive Output Conductance Modeling of SiGe HBTs Using TCAD," Proceedings of the 2010 IEEE International SiGe Technology and Devices Meeting, pp. 1-2, 2010

C.H.J. Poh, S.K. Bhattacharya, J. Ferguson J.D. Cressler, and J. Papapolymerou, "Extraction of a Lumped Element, Equivalent Circuit Model for Via Interconnections in 3-D Packages Using a Single Via Structure with Embedded Capacitors," Proceedings of the 2010 Electronic Components and Technology Conference, pp. 1783-1788, 2010.

J.D. Cressler, "A New Approach to Microelectronics and Nanotechnology Education for Undergraduates of All Disciplines," Proceedings of the 2010 American Association of Engineering Education Annual Conference, paper AC-2010-89, pp. 1-12, 2010.

S. Horst, P. Chakraborty, P. Saha, J.D. Cressler, H. Gustat, B. Heinemann, G.G. Fischer, D. Knoll, and B. Tillack, "A Comparison of npn vs. pnp SiGe HBT Oscillator Phase Noise Performance in a Complementary SiGe Platform," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 13-16, 2010.

S. Seth, T. Thrivikraman, P. Cheng, J.D. Cressler, J. Babcock, and A. Buchholz, "A Large-signal RF Reliability Study of Complementary SiGe HBTs on SOI Intended for Use in Wireless Applications," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 133-136, 2010.

P. Cheng, S. Horst, S. Phillips, S. Seth, R. Mills, J.D. Cressler, J. Babcock, and A. Buchholz, "An Investigation of Low-Frequency and Phase Noise in Complementary SiGe HBTs on SOI," Proceedings of the2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 165-168, 2010.

J. Yuan, K.A. Moen, and J.D. Cressler, "An Investigation of Collector-Base Transport in SiGe HBTs Designed for Half-Terahertz Speeds," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 157-160, 2010.

P. Saha and J.D. Cressler, "A Tunable, SiGe X-band Image Reject Mixer," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 196-199, 2010.

K.A. Moen, J. Yuan, P. Chakraborty, M. Bellini, J.D. Cressler, H. Ho, H. Yasuda, and R. Wise, "Improved 2-D Regional Transit Time Analysis for Optimized Scaling of SiGe HBTs," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 257-260, 2010.

S. Shankar, S. Horst, and J.D. Cressler, "Frequency- and Amplitude-Tunable X-to-Ku Band SiGe Ring Oscillators for Multiband BIST Applications," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 9-12, 2010.

A. Madan, J.D. Cressler, and A.J. Joseph, "A High-Linearity Inverse-Mode SiGe BiCMOS RF Switch," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 61-64, 2010.

P.S. Chakraborty, S.J. Horst, K.A. Moen, M. Bellini, and J.D. Cressler, "An Investigation of Electro-thermal Instabilities of 150 GHz SiGe HBTs Fabricated on SOI," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 141-144, 2010.

L. Luo, G. Niu, L. Najafizadeh, and J.D. Cressler, "Impact of the Non-ideal Temperature Dependence of IC-VBE on Ultra-Wide Temperature Range SiGe HBT Bandgap Reference Circuits," Proceedings of the 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 220-223, 2010.

C.E. Patterson, T.K. Thrivikraman, A.M. Yepes, S.K. Bhattacharya, J.D. Cressler, and J. Papapolymerou, "Implementation of a Low Cost, Lightweight X-Band Antenna with Integrated SiGe RF Electronics," Proceedings of the 2010 IEEE International Geoscience and Remote Sensing Symposium, pp. 681-684, 2010.

A.S. Keys, J.H. Adams, L.M. Smith, R.E. Ray, and J.D. Cressler, "Advanced Avionics and Processor Systems for a Flexible Space Exploration Architecture," Proceedings of the 2010 AIAA Space Conference, pp. 1-8, 2010.

W.T. Khan, S. Bathacharya, S. Horst, J.D. Cressler, and J. Papapolymerou, "Low Phase Noise K-band Oscillator on Organic Liquid Crystal Polymer (LCP) Substrate," Proceedings of the 2010 IEEE MTT-S International Microwave Symposium, pp. 1186-1189, 2010.

D.C. Howard, C.H.J. Poh, and J.D. Cressler, "A 3-20 GHz SiGe HBT Ultra-Wideband LNA with Gain and Return Loss Control for Multiband Wireless Applications," Proceedings of the 2010 IEEE Midwest Symposium on Circuits and Systems, pp. 445-448, 2010.

Z. Xu, G. Niu, L. Luo, and J.D. Cressler, "Physics-Based Trap-Assisted Tunneling Current Model for Cryogenic Temperature Compact Modeling of SiGe HBTs," Proceedings of the 2010 Electrochemical Society Symposium on SiGe and Ge: Materials, Processing, and Devices, vol. 33, pp. 301-310, 2010.

M. Mudholkar, H. A. Mantooth, G. Niu, J.D. Cressler, "Direct Parameter Extraction of Base and Emitter Resistances for SiGe HBTs Using DC Data Only," Proceedings of the 2010 Electrochemical Society Symposium on SiGe and Ge: Materials, Processing, and Devices, vol. 33, pp. 337-348, 2010.

C.H.J. Poh, D.C. Howard, P. Cheng, J. Papapolymerou, and J.D. Cressler, "De-Embedding Transmission Lines Using a Full-wave EM-Simulated Pad Model," Technical Digest of the 2010 IEEE Asia-Pacific Microwave Symposium, pp. 1208-1211, 2010.

C.H.J. Poh, S.K. Bhattacharya, J.D. Cressler, and J. Papapolymerou, "Extraction of a Lumped Model for Via Interconnection in LCP Using a Single Via Structure With Embedded Capacitor," Proceedings of the 2010 IEEE Electronic Components and Technology Conference, pp. 1783-1788, 2010.

A. Madan, S. Seth, J.D. Cressler, X. Bi, and K. Green "Understanding and Modeling of Linearity in Silicon-Germanium Heterojunction Bipolar Transistors," Proceedings of the 2010 Semiconductor Research Corporation TECHCON, paper 4.7, pp. 1-4, 2010.

R. Arora, K.A. Moen, A. Madan, J.D. Cressler, E.X. Zhang, D.M. Fleetwood, R.D. Schrimpf A.K. Sutton, and H.M. Nayfeh, "Impact of Body Tie and Source/Drain Contact Spacing on the Hot Carrier Reliability of 45-nm RF-CMOS," Proceedings of the 2010 International Integrated Reliability Workshop, pp. 56-60, 2010.

2009 Papers

S. Horst, S. Phillips, H. Lavasani, F. Ayazi, and J.D. Cressler, “SiGe Digital Frequency Dividers with Reduced Residual Phase Noise,” Proceedings of the 2009 IEEE Custom Integrated Circuits Conference, pp. 251-254, 2009.

D. Ma, X. Geng, F. Dai, and J.D. Cressler, “A 6th Order Butterworth SC Low Pass Filter for Cryogenic Applications from -180ºC to 120ºC,” Proceedings of the 2009 IEEE Aerospace Conference,” pp. 1-8, 2009.

P. Cheng, S. Seth, C.M. Grens, T.K. Thrivikraman, M. Bellini, J.D. Cressler, J. Babcock, T. Chen, J. Kim, and A. Buchholz, “Understanding the RF Safe-Operating-Area of SiGe HBTs on SOI,” Proceedings of the 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 17-20, 2009.

S. Seth, P. Cheng, C.M. Grens, J.D. Cressler, J. Babcock, T. Chen, J. Kim, and A. Buchholz, “Comparing RF Linearity of npn and pnp SiGe HBTs Fabricated on Thick-film SOI,” Proceedings of the 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 29-32, 2009.

T.K. Thrivikraman, A. Appaswamy, S.D. Phillips, A.K. Sutton, and J.D. Cressler, “A Novel Device Structure using a Shared-Subcollector, Cascoded Inverse-Mode SiGe HBT for Enhanced Radiation Tolerance,” Proceedings of the 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 79-82, 2009.

J. Yuan and J.D. Cressler, “A Novel Superjunction Collector Design for Improving Breakdown Voltage in High-Speed SiGe HBTs,” Proceedings of the 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 75-78, 2009.

T.K. Thrivikraman, W.-M.L. Kuo, and J.D. Cressler, “A Two-Channel, Ultra-Low-Power, SiGe BiCMOS Receiver Front-end for X-Band Phased Array Radars,” Proceedings of the 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 43-46, 2009.

D.C. Howard, X. Li, and J.D. Cressler, “A Low-Power, 1.8-2.6 dB Noise Figure, SiGe HBT Wideband LNA for Multiband Wireless Applications,” Proceedings of the 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 55-58, 2009.

D.B. Thomas, J.D. Cressler, L. Najafizadeh, R.W. Johnson, L. Peltz, and S. Phillips, “Performance and Reliability of SiGe Devices and Circuits For High-Temperature Applications,” Proceedings of the 2009 IMAPS International High-Temperature Electronics Network Conference, pp. 49-56, 2009.

C. Patterson, T.K. Thrivikraman, S. Bhattacharya, C.H.J. Poh, J.D. Cressler, and J. Papapolymerou, “Organic Wafer-Scale Packaging for X-Band SiGe Low Noise Amplifier,” Proceedings of the2009 IEEE European Microwave Symposium, pp. 141-144, 2009.

T.K. Thrivikraman, C.M. Grens, J.M. Andrews, W.-M.. Kuo, J.P. Comeau, M. Morton, J.D. Cressler, J. Papapolymerou, and M. Mitchell, "A Single-Chip 4-Bit SiGe BiCMOS T/R Module for X-Band Phased-Array Radar Systems," Proceedings of the XXX Union of Radio Science (URSI) Meeting, p. 1-2, 2009.

C.M. Grens, P. Cheng, and J.D. Cressler, "An Investigation of the Large-Signal RF Safe-Operating-Area on Aggressively-Biased Cascode SiGe HBTs for Power Amplifier Applications," Proceedings of the 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 237-240, 2009.

T.K. Thrivikraman, C.M. Grens, W.-M.L. Kuo, J.A. Andrews, and J.D. Cressler, "A High-Linearity, X-band, SiGe Low-Noise Amplifier for Improved Dynamic Range in Next-Generation Radar and Wireless Systems," Proceedings of the 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 221-224, 2009.

P.K. Saha, J.P. Comeau, and J.D. Cressler, "A K-band nMOS SPDT switch and 1-bit Phase Shifter Implemented in 130nm SiGe BiCMOS Technology," Proceedings of the 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 92-95, 2009.

Z. Xu, G. Niu, L. Luo, P.S. Chakraborty, D. Thomas, P. Cheng, and J.D. Cressler, "Cryogenic RF Small-Signal Modeling and Parameter Extraction of SiGe HBTs," Proceedings of the 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 96-99, 2009.

S. Horst and J.D. Cressler, "AM/PM Nonlinearities in SiGe HBTs," Proceedings of the 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 241-244, 2009.

S. Sanathanamurthy, V. Ramachandran, M.L. Alles, R.A. Reed, L.W. Massengill, A. Raman, M. Turowski, A. Mantooth, M. Barlow, K. Moen, M. Bellini, A. Sutton, and J.D. Cressler, "Simulation of SRAM SEU Sensitivity at Reduced Operating," Proceedings of the 2009 GOMAC-Tech -Government Microcircuit Applications and Critical Technology Conference, pp. 551-554, 2009.

K. Climer, T. Haeffner, M.L. Alles, L.W. Massengill, R.A. Reed, B. Blalock, and J.D. Cressler, "Simulation-based Study of Single Event Transients in a SiGe BiCMOS Low Power Operational Amplifier," Proceedings of the 2009 GOMAC-Tech-Government Microcircuit Applications and Critical Technology Conference, pp. 539-542, 2009.

A. Madan, T. Thrivikraman, and J.D. Cressler, "Failure Mechanisms in CMOS-Based RF Switches Subjected to RF Stress," Proceedings of the 2009 IEEE International Reliability Physics Symposium, pp. 741-744, 2009.

S. Phillips, A. Sutton, M. Bellini, A. Appaswamy, J. Cressler, A. Grillo, G. Vizkelethy, P. Marshall, M. McCurdy, R. Reed, and P. Dodd, "Impact of Deep Trench Isolation on Advanced SiGe HBT Reliability in Radiation Environments," Proceedings of the 2009 IEEE International Reliability Physics Symposium, pp. 157-164, 2009.

P.S. Chakraborty, A. Appaswamy, P.K. Saha, N.K. Jha, J.D. Cressler, H. Yasuda, B. Eklund, and R. Wise, "Mixed-Mode Stress Degradation Mechanisms in pnp SiGe HBTs," Proceedings of the 2009 IEEE International Reliability Physics Symposium, pp. 83-88, 2009.

2008 Papers

J. Yuan and J.D. Cressler, “Enhancing the Speed of SiGe HBTs Using fT-Doubler Techniques,” Proceedings of the 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 50-53, 2008. 

P. Cheng, A. Appaswamy, M. Bellini, and J.D. Cressler, “Probing Hot Carrier Phenomena in npn and pnp SiGe HBTs,” Proceedings of the 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 54-57, 2008. 

R. Berger, J.D. Cressler, R. Garbos, M. Mojarradi, L. Peltz, B. Blalock, W. Johnson, G. Niu, F. Dai, A. Mantooth, J. Holmes, M. Alles, P. McCluskey, “Miniaturized Data Acquisition System for Extreme Temperature Environments,” Proceedings of the 2008 IEEE Aerospace Conference,” pp. 1-7, 2008.

A.S. Keys, J.H. Adams, J.D. Cressler, R.C. Darty, M.A. Johnson, and M.C. Patrick, “High Performance, Radiation Hardened Electronics for Space and Lunar Environments, Proceedings of the 2008 Space Technology and Applications International Forum (STAIF), pp. 749-756, 2008.

A. Madan, J.D. Cressler, and S. Koester, “Low-Frequency Noise in Buried-Channel SiGe n-MODFETs,” Proceedings of the 2008 International Silicon-Germanium Technology and Devices Meeting (ISTDM), pp. 60-61, 2008.

P. Cheng, C.M. Grens, A. Appaswamy, P. Chakraborty and J.D. Cressler, “Modeling Mixed-Mode DC and RF Stress in SiGe HBT Power Amplifiers,” Proceedings of the 2008 Bipolar/BiCMOS Circuits and Technology Meeting, pp. 133-136, 2008.

C.M. Grens, S. Seth, and J.D. Cressler, “Common-base Intermodulation Characteristics of SiGe HBTs,” Proceedings of the 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 244-247, 2008.

J. Yuan, J.D. Cressler, Y. Cui, G. Niu, S. Finn, and A. Joseph, “On the Profile Design of SiGe HBTs for RF Lunar Applications Down to 43 K,” Proceedings of the 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 25-28, 2008.

X. Li, W.-M.L. Kuo, and J.D. Cressler, “A 40 GS/s SiGe Track-and-Hold Amplifier,” Proceedings of the 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 1-4, 2008.

L. Luo, G. Niu, D. Thomas, J. Yuan, and J.D. Cressler, “Forced-IE Pinch-in Maximum Output Voltage Limit in SiGe HBTs Operating at Cryogenic Temperatures,” Proceedings of the 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 41-44, 2008.

J. Andrews, J.D. Cressler, W.-M.L. Kuo, C.M. Grens, T. Thrivikraman, and S. Phillips, “An 850 mW X-BandSiGe Power Amplifer,” Proceedings of the 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting , pp. 109-112, 2008.

Z. Xu, X. Wei, G. Niu, L. Luo, D. Thomas, and J.D. Cressler, “Modeling of Temperature Dependent IC-VBE Characteristics of SiGe HBTs from 43-400K,” Proceedings of the 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 81-84, 2008.

T.K. Thrivikraman, W.-M.L. Kuo, J.P. Comeau, and J.D. Cressler, “The Impact of Technology Node Scaling on nMOS SPDT RF Switches,” Technical Digest of the 2008 IEEE European Microwave Symposium, pp.374-377, 2008.

C. Patterson, S. Horst, S. Bhattacharya, J.D. Cressler, and J. Papapolymerou, “Low Cost Organic Packaging For Silicon Based mm-wave Wireless Systems,” Technical Digest of the 2008 IEEE European Microwave Symposium, pp. 1242-1245, 2008.

M. Bellini, J.D. Cressler, M. Turowski, G. Avenier, A. Chantre, and P. Chevalier, “3-D Regional Transit Time Analysis of SiGe HBTs on Thin-Film SOI,” Proceedings of the 2008 Electrochemical Society Symposium on SiGe and Ge: Materials, Processing, and Devices, vol. 16(10), pp. 1079-1088, 2008.

A.S. Keys, J.H. Adams, M.C. Patrick, M.A. Johnson, and J.D. Cressler, “A Review of NASA’s Radiation-Hardened Electronics for Space Environments Project,” Proceedings of the 2008 AIAA Space Conference, pp.1-7, 2008.

C. Ulaganathan, N. Nambiar, B. Prothro, R. Greenwell, S. Chen, H. Hoang, R. Broughton, K. Cornett, G. Fu, B.J. Blalock, C.L. Britton, Jr., M.N. Ericson, H.A. Mantooth, J.D. Cressler, and R.W. Berger, “A SiGe BiCMOS Instrumentation Channel for Extreme Environment Applications,” Proceedings of the IEEE Midwest Symposium on Circuits and Systems, pp. 217-220, 2008.

M. Ullán, J. Rice, G. Brooijmans, J.D. Cressler, D. Damiani, S. Díez, T. Gadfort, A. A. Grillo, R. Hackenburg, G. Hare, A. Jones, J. Kierstead, W. Konnenenko, I. Mandić, F. Martinez-McKinney, J. Metcalfe, F. M. Newcomer, J. A. Parsons, S. Phillips, S. Rescia, H.F.-W. Sadrozinski, A. Seiden, E. Spencer, H. Spieler, A. K. Sutton, Y. Tazawa, M. Wilder, and E. Wulf, “Evaluation of Two SiGe HBT Technologies for the ATLAS sLHC Upgrade,” Proceedings of the 2008 Topical Workshop on Electronics for Particle Physics, pp. 111-115, 2008.

J.S. Rice, M. Ullan, G. Brooijmans, J. D. Cressler, D. Damiani1, S. Diez, T. Gadfort, A.A. Grillo, R. Hackenburg, G. Hare, A. Jones, J. Kierstead, W. Kononenko, I. Mandić, F. Martinez-McKinney, J. Metcalfe, F. M. Newcomer, J. A. Parsons, S. Phillips, S. Rescia, H. F. F-W. Sadrozinski, A. Seiden, N. Spencer, H. Spieler, A. K. Sutton, Y. Tazawa, E. Wulf, M. Wilder, Performance of the SiGe HBT 8HP and 8WL Technologies after High Dose/Fluence Radiation Exposure,” Proceedings of the 2008 IEEE Nuclear Science Symposium and Medical Imaging Conference, pp. 2206-2210, 2008.

A. Madan, S.D. Phillips, J.D. Cressler, P.W. Marshall, Q. Liang, and G. Freeman, “Impact of Proton Irradiation on the RF Performance of 65 nm SOI CMOS Technology,” Proceedings of the 2008 IEEE Radiation Effects on Components and Systems (RADECS) Conference, pp. 47-52, 2008.

 

2007 Papers

W.-M.L. Kuo, J.P. Comeau, J.M. Andrews, J.D. Cressler, and M.A. Mitchell, “A Comparison of Shunt and Series/Shunt nMOSFET Single-Pole Double-Throw Switches for X-Band Phased Array T/R Modules,”  Proceedings of the 2007 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 249-252, 2007. 

S. Venkataraman, B. Banerjee, C.-H. Lee, J. Laskar, J. Papapolymerou, and J.D. Cressler, “Cryogenic Small-Signal Operation of 0.18 µm MOSFETs,” Proceedings of the 2007 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 52-55, 2007. 

Y. Cui, G. Niu, Y. Li, S.S. Taylor, Q. Liang, and J. D. Cressler, “On the Excess Noise Factors and Noise Parameter Equations for RF CMOS,” Proceedings of the 2007 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 40-43, 2007.    

M.L. Alles, R.A. Reed, A.N. Kalavagunta, B.D. Sierawski,  J.A. Pellish, E. Montes, B. Blalock, L. Peltz,     J.D.Cressler, P.W. Marshall, and G. Niu, “Implications of Cold Temperature Environments for Single Event Radiation Effects,” Proceedings of the 2007 GOMAC-Tech - Government Microcircuit Applications and Critical Technology Conference, pp. 429-432, 2007. 

P. Cheng, C. Zhu, J.D. Cressler, and A.J. Joseph, “The Mixed-Mode Damage Spectrum of SiGe HBTs,” Technical Digest of the 2007 IEEE International Reliability Physics Symposium, pp. 566-567, 2007.

J.P. Comeau, J.D. Cressler, M. Mitchell, N. Kinayman, and J.-P. Lanteri, “Design and Layout Techniques for the Optimization of nMOS Series-Shunt SPDT Switches in a 130 nm SiGe BiCMOS Technology,” Proceedings of the 2007 IEEE MTT-S RFIC Symposium, pp. 457-460, 2007.

T.K. Thrivikraman, W.-M.L. Kuo, J.P. Comeau, A.K. Sutton, J.D. Cressler, P.W. Marshall, and M.A. Mitchell,  “A 2 mW, Sub-2 dB Noise Figure, SiGe Low-Noise Amplifier For X-band High-Altitude or Space-based Radar Applications,” Proceedings of the 2007 IEEE MTT-S RFIC Symposium, pp. 629-632, 2007.

J. Andrews, J.D. Cressler, and M. Mitchell, “A High-Gain, Two-Stage X-Band SiGe Power Amplifier,” Proceedings of the 2007 IEEE MTT-S International Microwave Symposium, pp. 817-820, 2007.

M. Bellini, P. Cheng, A. Appaswamy, J.D. Cressler, and J. Cai, “1/f Noise in SiGe HBTs Fabricated on CMOS-Compatible Thin-Film SOI,” Proceedings of the Fourth SPIE International Symposium on Noise and Fluctuations in Circuits, Devices, and Materials,  vol. 6600, pp. 0H1-0H9, 2007.

Cheng, E. Zhao, J.D. Cressler, and J. Prasad, “On the Mechanisms of Low-Frequency Noise in Vertical Silicon pnp BJTs,” Proceedings of the Fourth SPIE International Symposium on Noise and Fluctuations in Circuits, Devices, and Materials,  vol. 6600, pp. 0C1-0C9, 2007.

A. Appaswamy, J.D. Cressler, and G. Niu, “A Novel Base Current Phenomenon in SiGe HBTs Operating in Inverse Mode,” Proceedings of the 2007 IEEE European Solid-State Device Research Conference, pp. 350-353, 2007.

C.M. Grens, J.D. Cressler, and A.J. Joseph, “Large-Signal Performance, Linearity, and Reliability Characteristics of Aggressively-Biased Cascode SiGe HBTs for Power Amplifier Applications,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 135-138, 2007.

J.P. Comeau, M.A. Morton, W.-M.L. Kuo, T. Thrivikraman, J.M. Andrews, C.M. Grens, J.D. Cressler, J. Papapolymerou, and M. Mitchell, “A Monolithic 5-Bit SiGe BiCMOS Receiver for X-Band Phased-Array Radar Systems,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 172-175, 2007.

M. Bellini, J.D. Cressler, and J. Cai, “Assessing the High-Temperature Capabilities of SiGe HBTs Fabricated on CMOS-compatible Thin-film SOI,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 234-237, 2007.

J. Yuan, R. Krithivasan, J.D. Cressler, M.H. Khater, D.C. Ahlgren, and A.J. Joseph, “On the Frequency Limits of SiGe HBTs for TeraHertz Applications,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 22-25, 2007.

L. Luo, G. Niu, and J.D. Cressler, “Modeling of Bandgap Narrowing for Consistent Simulation of SiGe HBTs Across a Wide Temperature Range,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 123-126, 2007.

S. Finn, J. Yuan, R. Krithivasan, L. Najafizadeh, P. Cheng, and J.D. Cressler, “A 10 Mbps SiGe BiCMOS Transceiver for Operation Down to Cryogenic Temperatures,” Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 115-118, 2007.

A. Sutton, K. Moen, J.D. Cressler, M.A. Carts, P.W. Marshall, J.A. Pellish, R.A. Reed, M.L. Alles, and G. Niu, “Proton-Induced SEU in SiGe Digital Logic at Cryogenic Temperatures,” Proceedings of the 2007 IEEE International Semiconductor Device Research Symposium, paper WP6-04, pp. 1-2, 2007.

B. Jun, N. Merrett, S. Phillips, A.K. Sutton, J.D. Cressler, J. Williams, and P.W. Marshall, “A Comparison of 63 MeV Proton and 10 keV X-ray Radiation Effects in 4H-SiC Depletion-Mode Vertical Trench JFETs,” Proceedings of the 2007 IEEE International Semiconductor Device Research Symposium, paper WP6-01, pp. 1-2, 2007.

A. Raman, M. Turowski, A. Fedoseyev, and J.D. Cressler, “Addressing Challenges in Device-Circuit Modeling for Extreme Environments of Space,” Proceedings of the 2007 IEEE International Semiconductor Device Research Symposium, paper WP2-02, pp. 1-2, 2007.

B.O. Woods, H.A. Mantooth, and J.D. Cressler, “SiGe HBT Compact Modeling for Extreme Temperatures,” Proceedings of the 2007 IEEE International Semiconductor Device Research Symposium, paper WP2-05, pp. 1-2, 2007.

M. Mitchell and J.D. Cressler, “An X-Band SiGe Single-MMIC Transmit/Receive Module for Radar Applications,” Proceedings of the 2007 IEEE Radar Conference, pp. 664-669, 2007.

A.S. Keys, J.H. Adams, D.O. Frazier, M.C. Patrick, M.D. Watson, M.A. Johnson, J.D. Cressler, and E.A. Kolawa, “Developments in Radiation-Hardened Electronics Applicable to the Vision for Space Exploration,” Proceedings of the 2007 AIAA Space Conference, pp. 1-10, 2007.

2006 - 1986 Papers